公开(公告)号：US20240429126A1

公开(公告)日：2024-12-26

申请号：US18214271

申请日：2023-06-26

Applicant: Intel Corporation

Inventor： Jeffrey S. LEIB ,  Daniel B. O’BRIEN ,  Jennifer ZAVESTOSKI ,  Hye Kyung KIM ,  Caitlin Kilroy ,  Cortnie Vogelsberg ,  Abha Gosavi ,  Ashish Bhattarai

IPC: H01L23/48 ,  H01L23/498

Abstract: Embodiments of the disclosure are in the field of integrated circuit structure fabrication. In an example, an integrated circuit structure includes a plurality of conductive lines, individual ones of the plurality of conductive lines having a liner including molybdenum (Mo), and a fill including tungsten (W). The integrated circuit structure also includes an inter-layer dielectric (ILD) structure having portions between adjacent ones of the plurality of conductive lines.