HIGH PURITY GRANULAR SILICON
    1.
    发明申请
    HIGH PURITY GRANULAR SILICON 审中-公开
    高纯度颗粒硅

    公开(公告)号:US20080187481A1

    公开(公告)日:2008-08-07

    申请号:US12100151

    申请日:2008-04-09

    IPC分类号: C01B33/02

    CPC分类号: C01B33/027

    摘要: A high-purity semiconductor grade granular silicon composition, which can be produced in commercial quantities, is disclosed. In one embodiment the composition comprises a plurality of free-flowing particles having a total weight of at least about 300 kg and an average transition metal concentration of less than 0.2 ppba. In another embodiment the composition comprises a plurality of free-flowing silicon particles having a total weight of at least about 300 kg and at least 99 percent of the particles are between about 250 and 3500 microns in size.

    摘要翻译: 公开了可以商业量生产的高纯度半导体级粒状硅组合物。 在一个实施方案中,组合物包含多个自由流动的颗粒,其总重量为至少约300kg,平均过渡金属浓度小于0.2ppba。 在另一个实施方案中,组合物包含多个自由流动的硅颗粒,其总重量为至少约300kg,并且至少99%的颗粒的尺寸为约250至3500微米。