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39 条记录 (耗时 0.021 秒)

    Angular substrates
    1.
    发明授权
    Angular substrates 有权

    公开(公告)号：US07122280B2

    公开(公告)日：2006-10-17

    申请号：US10214113

    申请日：2002-08-08

    申请人： Jiro Moriya ,  Masataka Watanabe ,  Satoshi Okazaki

    发明人： Jiro Moriya ,  Masataka Watanabe ,  Satoshi Okazaki

    IPC分类号： H01L21/44

    CPC分类号： H01L21/30625 ,  G03F1/60 ,  H01L21/02035 ,  Y10T428/12528

    摘要： A square substrate has a pair of opposed major surfaces and peripheral end faces therebetween, wherein a tapered edge portion is disposed between the peripheral end face and each major surface to define an inner boundary with the major surface, and has a width of 0.2–1 mm from the peripheral end face. Both or either one of the major surfaces of the substrate has a flatness of up to 0.5 μm in an outside region of the substrate that extends between a position spaced 3 mm inward from the peripheral end face and the inner boundary of the tapered edge portion.

    Method for polishing angular substrates
    2.
    发明授权
    Method for polishing angular substrates 有权
    抛光角基底的方法

    公开(公告)号：US06790129B2

    公开(公告)日：2004-09-14

    申请号：US10214114

    申请日：2002-08-08

    申请人： Jiro Moriya ,  Masataka Watanabe ,  Satoshi Okazaki ,  Hidekazu Ozawa ,  You Ishii ,  Shunichiro Kojima

    发明人： Jiro Moriya ,  Masataka Watanabe ,  Satoshi Okazaki ,  Hidekazu Ozawa ,  You Ishii ,  Shunichiro Kojima

    IPC分类号： B24B700

    CPC分类号： B24B37/042

    摘要： An angular substrate polishing method includes the steps of holding an angular substrate having a surface to be polished within a guide ring of a substrate holding head; pressing the substrate surface to be polished, and also one surface of the guide ring, against a polishing pad; and independently rotating the polishing pad and the substrate-holding head together with the substrate it holds while pressing the polishing pad-contacting surface of the guide ring against the polishing pad, to thereby polish the substrate surface. During the polishing step, a pressing force is applied to the guide ring which is separate from the pressing force applied to the substrate, enhancing the flatness of the polished substrate.

    摘要翻译： 角度衬底抛光方法包括以下步骤：将具有待抛光表面的角度衬底保持在衬底保持头的引导环内; 将抛光的基板表面以及引导环的一个表面压在抛光垫上; 并且在将导向环的抛光垫接触表面压靠在抛光垫上的同时，将抛光垫和基板保持头一起与其保持的基板一起旋转，从而抛光基板表面。 在抛光步骤期间，对导向环施加压力，该导向环与施加到基板上的按压力分开，提高抛光基板的平整度。

    Magnetron sputtering system and photomask blank production method based on the same
    8.
    发明授权
    Magnetron sputtering system and photomask blank production method based on the same 有权

    公开(公告)号：US06666957B2

    公开(公告)日：2003-12-23

    申请号：US10036685

    申请日：2001-12-21

    申请人： Masataka Watanabe ,  Satoshi Okazaki ,  Hideo Kaneko ,  Ken Ohashi ,  Hideki Kobayashi

    发明人： Masataka Watanabe ,  Satoshi Okazaki ,  Hideo Kaneko ,  Ken Ohashi ,  Hideki Kobayashi

    IPC分类号： C23C1435

    CPC分类号： H01J37/3455 ,  C23C14/35 ,  H01J37/3408

    摘要： The present invention provides a magnetron sputtering system, which ensures a formation of a desired thin film, using a thick target. In the sputtering process, a portion of the target does not have erosion free portions. The present invention provides a magnetron sputtering system comprising a chamber for sputtering, a target electrode 5 installed inside said chamber, a substrate electrode 6 installed in the chamber opposite to the target electrode, a ring-shaped magnet 2 installed so as to enclose the side surface of the target electrode, and a semi-circular disk shaped magnet installed opposite to the target-mounted surface of the target electrode, wherein the semi-circular disk shaped magnet is rotated in the circumferential direction of the target electrode and is magnetized in the direction perpendicular to the target electrode. This ensures a specific magnetic field component to be generated over the thick planar target surface 3.

    Shared memory control system and shared memory control method
    9.
    发明授权
    Shared memory control system and shared memory control method 失效
    共享内存控制系统和共享内存控制方式

    公开(公告)号：US06457106B1

    公开(公告)日：2002-09-24

    申请号：US09120239

    申请日：1998-07-22

    申请人： Masataka Watanabe

    发明人： Masataka Watanabe

    IPC分类号： G06F1200

    CPC分类号： G06F13/161

    摘要： In a current shared memory cycle, the memory access band value of each bus master is calculated at any time and discriminated to determine the next memory cycle control before completion of the current shared memory cycle, so that the minimum memory access band value required by each bus master is maintained with the result that the shared memory can be efficiently utilized. Thus, there is provided a shared memory control apparatus and a shared memory control method, capable of realizing a memory control of an excellent efficiency by maintaining the memory access band width per unit time, required by the master.

    摘要翻译： 在当前的共享存储器周期中，每个总线主机的存储器访问频带值在任何时间被计算，并且在完成当前的共享存储器周期之前被辨别以确定下一个存储器周期控制，使得每个总线主机所需的最小存储器访问频带值 总线主机被维护，结果可以有效地利用共享存储器。 因此，提供了一种共享存储器控制装置和共享存储器控制方法，其能够通过维持主机所需的每单位时间的存储器访问带宽来实现具有优异效率的存储器控​​制。

    Compound semiconductor epitaxial wafer
    10.
    发明授权
    Compound semiconductor epitaxial wafer 失效
    化合物半导体外延片

    公开(公告)号：US6057592A

    公开(公告)日：2000-05-02

    申请号：US101431

    申请日：1998-10-21

    申请人： Masataka Watanabe ,  Tsuneyuki Kaise ,  Masayuki Shinohara ,  Masahisa Endou ,  Tohru Takahashi

    发明人： Masataka Watanabe ,  Tsuneyuki Kaise ,  Masayuki Shinohara ,  Masahisa Endou ,  Tohru Takahashi

    IPC分类号： H01L21/20 ,  H01L21/203 ,  H01L21/205 ,  H01L33/30 ,  H01L29/167

    CPC分类号： H01L33/30 ,  H01L33/12

    摘要： At the time of forming an alloy composition gradient layer 4 of gallium arsenide phosphide GaAs.sub.x P.sub.1-x having an arsenic alloy composition x changed in such a range as not to exceed a predetermined alloy composition a with an increase of a layer thickness d between a GaP layer 3 and a composition constant layer 5 of gallium arsenide phosphide GaAs.sub.a P.sub.1-a having the predetermined alloy composition a to be grown above the GaP layer; the alloy composition x is abruptly ascended as in composition ascending zones C11 to C13 with the ascended thickness d of an epitaxial layer and then descended as in crystal stabilizing zones S11 to S13 in such a range as not to cancel the previous ascent amount. One or more combinations of such ascent and descent in the alloy composition are repeated to form as distributed in the alloy composition gradient layer 4, and then the alloy composition x is ascended to the predetermined alloy composition a. Thereby there is obtained a compound semiconductor epitaxial wafer which can effectively eliminate stresses caused by lattice mismatching, can be made thinner with an excellent productivity, and can have a high luminance due to employment of a reflective layer.

    摘要翻译： PCT No.PCT / JP97 / 00050 Sec。 371日期：1998年10月21日 102（e）日期1998年10月21日PCT 1997年1月13日PCT PCT。 公开号WO97 / 25747 日期1997年7月17日在形成具有砷合金组成x的砷化镓磷化镓GaAs xP 1-x的合金组成梯度层4的时间在不超过预定合金组成a的范围内变化，层厚增加 在GaP层上方生长具有规定的合金组成a的GaP层3和砷化磷化镓GaAsaP1-a的组成恒定层5之间的d; 如同外延层的上升厚度d的组成上升区域C11至C13中的合金组成x突然上升，然后如在晶体稳定区域S11至S13中下降到不消除先前上升量的范围内。 重复合金组合物中这种上升和下降的一种或多种组合，以形成分布在合金组成梯度层4中，然后合金组合物x上升到预定的合金组成a。 由此，可以获得能有效消除由晶格失配引起的应力的化合物半导体外延晶片，能够以优异的生产率变薄，并且由于使用反射层而具有高的亮度。