公开(公告)号：US08387220B2

公开(公告)日：2013-03-05

申请号：US12756071

申请日：2010-04-07

申请人： Junri Ishikura ,  Naoari Shibata ,  Katsumi Aoki ,  Yasuyuki Saito

发明人： Junri Ishikura ,  Naoari Shibata ,  Katsumi Aoki ,  Yasuyuki Saito

IPC分类号： H04R17/10

CPC分类号： B41J2/161 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1632 ,  B41J2/1642 ,  B41J2/1646 ,  H01L41/0478 ,  H01L41/0973 ,  H01L41/316 ,  Y10T29/42 ,  Y10T29/49155

摘要： Providing a manufacturing method of a piezoelectric element which contains at least a substrate, a piezoelectric film and an electrode provided between the substrate and the piezoelectric film. The method includes providing an electrode on a substrate, and baking a piezoelectric film after forming the piezoelectric film on the electrode. The electrode includes a mixture layer having an electroconductive oxide and a metal mixed therein. The concentration of the electroconductive oxide in the substrate side of the mixture layer is higher than that in the piezoelectric film side of the mixture layer, and the concentration of the metal in the piezoelectric film side of the mixture layer is higher than that in the substrate side of the mixture layer.

摘要翻译： 提供一种压电元件的制造方法，所述压电元件至少含有基板，压电膜和设置在基板和压电膜之间的电极。 该方法包括在基板上设置电极，以及在电极上形成压电膜之后烘烤压电膜。 电极包括具有导电氧化物和混合在其中的金属的混合层。 混合层的基板侧的导电性氧化物的浓度高于混合层的压电膜侧的浓度，混合层的压电膜侧的金属的浓度高于基板 混合层的一侧。

公开(公告)号：US20100192341A1

公开(公告)日：2010-08-05

申请号：US12756071

申请日：2010-04-07

申请人： Junri Ishikura ,  Naoari Shibata ,  Katsumi Aoki ,  Yasuyuki Saito

发明人： Junri Ishikura ,  Naoari Shibata ,  Katsumi Aoki ,  Yasuyuki Saito

IPC分类号： H01L41/22

CPC分类号： B41J2/161 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1632 ,  B41J2/1642 ,  B41J2/1646 ,  H01L41/0478 ,  H01L41/0973 ,  H01L41/316 ,  Y10T29/42 ,  Y10T29/49155

摘要： Providing a manufacturing method of a piezoelectric element by which even if an electrode and a piezoelectric film stacked on a substrate are baked at a high temperature, the electrode does not oxidize and mutual diffusion between the substrate, the electrode and the piezoelectric film may be suppressed. The electrode is adapted as a laminated layer body which includes an electroconductive oxide layer, a mixture layer having an electroconductive oxide and electroconductive metal, and an electroconductive metal layer including the electroconductive metal from a substrate side, and the mixture layer above is adapted as a graded composition structure in which a ration of the electroconductive oxide is highest in an interface with the electroconductive oxide layer and lowest in an interface with the electroconductive metal layer.

摘要翻译： 提供一种压电元件的制造方法，其中即使在高温下堆积在基板上的电极和压电膜也能够被氧化，并且可以抑制基板，电极和压电膜之间的相互扩散 。 该电极适合作为层压层体，其包括导电氧化物层，具有导电氧化物和导电金属的混合层，以及包含来自衬底侧的导电金属的导电金属层，并且上述混合层适于作为 分级组成结构，其中导电氧化物的比例在与导电氧化物层的界面中最高，并且在与导电金属层的界面中最低。

公开(公告)号：US20070228894A1

公开(公告)日：2007-10-04

申请号：US11723224

申请日：2007-03-19

申请人： Junri Ishikura ,  Naoari Shibata ,  Katsumi Aoki ,  Yasuyuki Saito

发明人： Junri Ishikura ,  Naoari Shibata ,  Katsumi Aoki ,  Yasuyuki Saito

IPC分类号： H01L41/00

CPC分类号： B41J2/161 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1632 ,  B41J2/1642 ,  B41J2/1646 ,  H01L41/0478 ,  H01L41/0973 ,  H01L41/316 ,  Y10T29/42 ,  Y10T29/49155

摘要： Providing a manufacturing method of a piezoelectric element by which even if an electrode and a piezoelectric film stacked on a substrate are baked at a high temperature, the electrode does not oxidize and mutual diffusion between the substrate, the electrode and the piezoelectric film may be suppressed. The electrode is adapted as a laminated layer body which includes an electroconductive oxide layer, a mixture layer having an electroconductive oxide and electroconductive metal, and an electroconductive metal layer including the electroconductive metal from a substrate side, and the mixture layer above is adapted as a graded composition structure in which a ration of the electroconductive oxide is highest in an interface with the electroconductive oxide layer and lowest in an interface with the electroconductive metal layer.

摘要翻译： 提供一种压电元件的制造方法，其中即使在高温下堆积在基板上的电极和压电膜也能够被氧化，并且可以抑制基板，电极和压电膜之间的相互扩散 。 该电极适合作为层压层体，其包括导电氧化物层，具有导电氧化物和导电金属的混合层，以及包含来自衬底侧的导电金属的导电金属层，并且上述混合层适于作为 分级组成结构，其中导电氧化物的比例在与导电氧化物层的界面中最高，并且在与导电金属层的界面中最低。

公开(公告)号：US07732997B2

公开(公告)日：2010-06-08

申请号：US11723224

申请日：2007-03-19

申请人： Junri Ishikura ,  Naoari Shibata ,  Katsumi Aoki ,  Yasuyuki Saito

发明人： Junri Ishikura ,  Naoari Shibata ,  Katsumi Aoki ,  Yasuyuki Saito

IPC分类号： H01L41/047

CPC分类号： B41J2/161 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1632 ,  B41J2/1642 ,  B41J2/1646 ,  H01L41/0478 ,  H01L41/0973 ,  H01L41/316 ,  Y10T29/42 ,  Y10T29/49155

摘要： Providing a manufacturing method of a piezoelectric element by which even if an electrode and a piezoelectric film stacked on a substrate are baked at a high temperature, the electrode does not oxidize and mutual diffusion between the substrate, the electrode and the piezoelectric film may be suppressed. The electrode is adapted as a laminated layer body which includes an electroconductive oxide layer, a mixture layer having an electroconductive oxide and electroconductive metal, and an electroconductive metal layer including the electroconductive metal from a substrate side, and the mixture layer above is adapted as a graded composition structure in which a ration of the electroconductive oxide is highest in an interface with the electroconductive oxide layer and lowest in an interface with the electroconductive metal layer.

摘要翻译： 提供一种压电元件的制造方法，其中即使在高温下堆积在基板上的电极和压电膜也能够被氧化，并且可以抑制基板，电极和压电膜之间的相互扩散 。 该电极适合作为层压层体，其包括导电氧化物层，具有导电氧化物和导电金属的混合层，以及包含来自衬底侧的导电金属的导电金属层，并且上述混合层适于作为 分级组成结构，其中导电氧化物的比例在与导电氧化物层的界面中最高，并且在与导电金属层的界面中最低。

公开(公告)号：US07998362B2

公开(公告)日：2011-08-16

申请号：US11463537

申请日：2006-08-09

申请人： Toshihiro Ifuku ,  Takanori Matsuda ,  Katsumi Aoki

发明人： Toshihiro Ifuku ,  Takanori Matsuda ,  Katsumi Aoki

IPC分类号： B41J2/45 ,  H01L41/187

CPC分类号： B41J2/14233 ,  B41J2/161 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1646 ,  H01L41/1876 ,  H01L41/316

摘要： A main component of a piezoelectric substance is PZT which has a perovskite type structure expressed as Pb(ZrxTi1-x)O3, in which x expresses an element ratio Zr/(Zr+Ti) of Zr and Ti in the formula, an element ratio Pb/(Zr+Ti) of Pb, Zr and Ti of the piezoelectric substance is 1.05 or more, an element ratio Zr/(Zr+Ti) of Zr and Ti is 0.2 to 0.8 inclusive, and a Curie temperature Tc of the piezoelectric substance and a Curie temperature Tc0 in bulk at an element ratio of Zr and Ti of the piezoelectric substance satisfy a relation of Tc>Tc0+50° C.

摘要翻译： 压电体的主要成分是具有以Pb（Zr x Ti 1-x）O 3表示的钙钛矿型结构的PZT，其中x表示式中的Zr和Ti的元素比Zr /（Zr + Ti），元素比例 压电体的Pb，Zr，Ti的Pb /（Zr + Ti）为1.05以上，Zr和Ti的元素比Zr /（Zr + Ti）为0.2〜0.8，并且压电体的居里温度Tc 物质和居里温度Tc0在压电物质的Zr和Ti的元素比中满足Tc> Tc0 + 50℃的关系。

公开(公告)号：US07804231B2

公开(公告)日：2010-09-28

申请号：US11677267

申请日：2007-02-21

申请人： Toshihiro Ifuku ,  Katsumi Aoki ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Yong Kwan Kim ,  Hiroshi Nakaki ,  Rikyu Ikariyama

发明人： Toshihiro Ifuku ,  Katsumi Aoki ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Yong Kwan Kim ,  Hiroshi Nakaki ,  Rikyu Ikariyama

IPC分类号： H01L41/187

CPC分类号： B41J2/14233 ,  B41J2/161 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1634 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2/1646 ,  B41J2202/03 ,  H01L41/0805 ,  H01L41/1875 ,  H01L41/1876 ,  H01L41/316

摘要： Provided are a piezoelectric film, a piezoelectric film element, a liquid discharge head using the piezoelectric film element, and a liquid discharge apparatus. A piezoelectric film element that can be suitably used for a discharge pressure-generating element of a liquid discharge head is obtained by using an epitaxial oxide film composed of a perovskite composite oxide constituted according to a general formula ABO3 as a piezoelectric film. The epitaxial oxide film has at least an A domain and a B domain having a crystal orientation deviation with respect to each other. The crystal orientation deviation between the A domain and the B domain is less than 2°.

摘要翻译： 提供一种压电膜，压电膜元件，使用该压电膜元件的液体排出头和液体排出装置。 通过使用由根据通式ABO3构成的钙钛矿复合氧化物构成的外延氧化膜作为压电膜，可以适用于液体排出头的排出压力产生元件的压电膜元件。 外延氧化膜具有至少A畴和具有相对于晶体取向偏离的B畴。 A域与B域之间的晶体取向偏差小于2°。

公开(公告)号：US20090140197A1

公开(公告)日：2009-06-04

申请号：US12364429

申请日：2009-02-02

申请人： Katsumi Aoki ,  Kenichi Takeda ,  Tetsuro Fukui ,  Hiroshi Funakubo

发明人： Katsumi Aoki ,  Kenichi Takeda ,  Tetsuro Fukui ,  Hiroshi Funakubo

IPC分类号： H01L41/18

CPC分类号： B41J2/14233 ,  B41J2202/03 ,  C01G23/003 ,  C01G29/006 ,  C01G45/006 ,  C01G45/1221 ,  C01G49/009 ,  C01P2002/34 ,  C01P2002/52 ,  C01P2006/40 ,  C04B35/44 ,  C04B35/4682 ,  C04B35/475 ,  C04B35/49 ,  C04B35/495 ,  C04B2235/3206 ,  C04B2235/3215 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3236 ,  C04B2235/3241 ,  C04B2235/3251 ,  C04B2235/3255 ,  C04B2235/3258 ,  C04B2235/3262 ,  C04B2235/3275 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/3298 ,  C04B2235/5292 ,  C04B2235/5296 ,  C04B2235/76 ,  C04B2235/765 ,  C04B2235/768 ,  C04B2235/787 ,  H01L41/0805 ,  H01L41/1871 ,  H01L41/1878 ,  H02N2/106 ,  H02N2/163

摘要： There is disclosed a piezoelectric element having, on a substrate, a piezoelectric body and a pair of electrodes which come in contact with the piezoelectric body, wherein the piezoelectric body consists of a perovskite type oxide represented by the following formula (1): (Bi,Ba)(M,Ti)O3  (1) in which M is an atom of one element selected from the group consisting of Mn, Cr, Cu, Sc, In, Ga, Yb, Al, Mg, Zn, Co, Zr, Sn, Nb, Ta and W, or a combination of the atoms of the plurality of elements.

摘要翻译： 公开了一种在基板上具有与压电体接触的压电体和一对电极的压电元件，其中，压电体由下式（1）表示的钙钛矿型氧化物构成： （线，公式）end =“lead”？>（Bi，Ba）（M，Ti）O3（1）<？in-line-formula description =“In-line Formulas”end =“尾”→其中M是选自Mn，Cr，Cu，Sc，In，Ga，Yb，Al，Mg，Zn，Co，Zr，Sn，Nb，Ta中的一种元素的原子 和W，或多个元素的原子的组合。

公开(公告)号：US20080067898A1

公开(公告)日：2008-03-20

申请号：US11852878

申请日：2007-09-10

申请人： Katsumi Aoki ,  Kenichi Takeda ,  Tetsuro Fukui ,  Hiroshi Funakubo

发明人： Katsumi Aoki ,  Kenichi Takeda ,  Tetsuro Fukui ,  Hiroshi Funakubo

IPC分类号： H01L41/187 ,  B41J2/045 ,  H02N2/00 ,  C04B35/00

CPC分类号： B41J2/14233 ,  B41J2202/03 ,  C01G23/003 ,  C01G29/006 ,  C01G45/006 ,  C01G45/1221 ,  C01G49/009 ,  C01P2002/34 ,  C01P2002/52 ,  C01P2006/40 ,  C04B35/44 ,  C04B35/4682 ,  C04B35/475 ,  C04B35/49 ,  C04B35/495 ,  C04B2235/3206 ,  C04B2235/3215 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3236 ,  C04B2235/3241 ,  C04B2235/3251 ,  C04B2235/3255 ,  C04B2235/3258 ,  C04B2235/3262 ,  C04B2235/3275 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/3298 ,  C04B2235/5292 ,  C04B2235/5296 ,  C04B2235/76 ,  C04B2235/765 ,  C04B2235/768 ,  C04B2235/787 ,  H01L41/0805 ,  H01L41/1871 ,  H01L41/1878 ,  H02N2/106 ,  H02N2/163

摘要： There is disclosed a piezoelectric element having, on a substrate, a piezoelectric body and a pair of electrodes which come in contact with the piezoelectric body, wherein the piezoelectric body consists of a perovskite type oxide represented by the following formula (1): (Bi,Ba)(M,Ti)O3   (1) in which M is an atom of one element selected from the group consisting of Mn, Cr, Cu, Sc, In, Ga, Yb, Al, Mg, Zn, Co, Zr, Sn, Nb, Ta, and W, or a combination of the atoms of the plurality of elements.

摘要翻译： 公开了一种在基板上具有与压电体接触的压电体和一对电极的压电元件，其中，压电体由下式（1）表示的钙钛矿型氧化物构成： in-line-formula description =“In-line Formulas”end =“lead”？>（Bi，Ba）（M，Ti）O 3（1） =“In-line Formulas”end =“tail”？>其中M是选自Mn，Cr，Cu，Sc，In，Ga，Yb，Al，Mg，Zn，Co中的一种元素的原子 ，Zr，Sn，Nb，Ta和W，或多个元素的原子的组合。

公开(公告)号：US20080012908A1

公开(公告)日：2008-01-17

申请号：US11769091

申请日：2007-06-27

申请人： KENICHI TAKEDA ,  Katsumi Aoki ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Tetsuro Fukui

发明人： KENICHI TAKEDA ,  Katsumi Aoki ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Tetsuro Fukui

IPC分类号： H01L41/187 ,  B41J2/045 ,  H01L41/24 ,  C01G23/00

CPC分类号： H01L41/1876 ,  H01L41/319 ,  Y10T29/42

摘要： A piezoelectric element comprises a piezoelectric body including a film made of an ABO3 perovskite oxide crystal epitaxially grown above a substrate, and a pair of electrode layers provided to the piezoelectric body, wherein the piezoelectric body has a porous region on a side opposite to a side of the substrate.

摘要翻译： 压电元件包括​​压电体，该压电体包括在基板上外延生长的由ABO 3钙钛矿氧化物晶体构成的膜和设置在压电体上的一对电极层，其中，压电体具有多孔 区域与衬底的一侧相对的一侧。

公开(公告)号：US20080012054A1

公开(公告)日：2008-01-17

申请号：US11677267

申请日：2007-02-21

申请人： Toshihiro IFUKU ,  Katsumi Aoki ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Yong Kim ,  Hiroshi Nakaki ,  Rikyu Ikariyama

发明人： Toshihiro IFUKU ,  Katsumi Aoki ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Yong Kim ,  Hiroshi Nakaki ,  Rikyu Ikariyama

IPC分类号： H01L29/76 ,  H01L29/94

CPC分类号： B41J2/14233 ,  B41J2/161 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1634 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2/1646 ,  B41J2202/03 ,  H01L41/0805 ,  H01L41/1875 ,  H01L41/1876 ,  H01L41/316

摘要： Provided are a piezoelectric film, a piezoelectric film element, a liquid discharge head using the piezoelectric film element, and a liquid discharge apparatus. A piezoelectric film element that can be suitably used for a discharge pressure-generating element of a liquid discharge head is obtained by using an epitaxial oxide film composed of a perovskite composite oxide constituted according to a general formula ABO3 as a piezoelectric film. The epitaxial oxide film has at least an A domain and a B domain having a crystal orientation deviation with respect to each other. The crystal orientation deviation between the A domain and the B domain is less than 2°.

摘要翻译： 提供一种压电膜，压电膜元件，使用该压电膜元件的液体排出头和液体排出装置。 通过使用由根据通式ABO 3构成的钙钛矿复合氧化物构成的外延氧化膜，可以适用于液体排出头的排出压力产生元件的压电膜元件， 作为压电膜。 外延氧化膜具有至少A畴和具有相对于晶体取向偏离的B畴。 A域与B域之间的晶体取向偏差小于2°。