公开(公告)号：US20240194407A1

公开(公告)日：2024-06-13

申请号：US18339597

申请日：2023-06-22

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sung-Yoon CHUNG ,  Ji-Sang An

IPC: H01G4/12 ,  C04B35/468 ,  C04B35/64 ,  H01G4/30

CPC classification number: H01G4/1227 ,  C04B35/4682 ,  C04B35/64 ,  H01G4/30 ,  C04B2235/3236 ,  C04B2235/3286 ,  C04B2235/3418 ,  C04B2235/656 ,  C04B2235/768 ,  C04B2235/781 ,  C04B2235/785 ,  C04B2235/85

Abstract: Provided are a dielectric material, a device including the same, and a method of preparing the dielectric material. The dielectric material includes a polycrystalline oxide including a plurality of crystal grain bulks and grain boundaries located between the plurality of crystal grain bulks, and the polycrystalline oxide includes an indium dopant in the grain boundaries.

公开(公告)号：US20200299197A1

公开(公告)日：2020-09-24

申请号：US16559324

申请日：2019-09-03

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sung-Yoon Chung ,  Ji-Sang An

IPC: C04B35/468 ,  C01G23/00 ,  C01G33/00 ,  C04B35/626 ,  C04B35/64 ,  H01G4/12

Abstract: The present disclosure provides a method for preparing a dielectric which can provide a low-dielectric loss dielectric not variable to frequency, wherein the dielectric shows a narrow variation in dielectric characteristics depending on temperature, undergoes no change in dielectric characteristics depending on frequency and thus has a low dielectric loss. The present disclosure also provides a dielectric prepared by the method.