公开(公告)号：US20230037147A1

公开(公告)日：2023-02-02

申请号：US17574764

申请日：2022-01-13

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Dong Ick SON ,  Dong Hee PARK ,  Joo Song LEE

IPC: C25B11/052 ,  H01B1/02 ,  C25B11/091 ,  C25B11/056 ,  C25B1/55 ,  C25B11/065 ,  C25B1/04

Abstract: Disclosed are a photoelectrochemical electrode and a method of manufacturing the same, which enable mass production at low cost. The photoelectrochemical electrode manufactured by forming a transition metal dichalcogenide layer on all or part of the surface of a porous substrate includes a porous substrate and a metal dichalcogenide layer on all or part of the surface of the porous substrate, thus improving photoelectrode characteristics and photocatalytic efficiency.