公开(公告)号：US06935928B2

公开(公告)日：2005-08-30

申请号：US10882362

申请日：2004-07-02

申请人： Kazuhito Uchikura ,  Kazuo Nishimoto ,  Masayuki Hattori ,  Nobuo Kawahashi ,  Hiroyuki Yano ,  Yukiteru Matsui ,  Gaku Minamihaba ,  Dai Fukushima ,  Nobuyuki Kurashima

发明人： Kazuhito Uchikura ,  Kazuo Nishimoto ,  Masayuki Hattori ,  Nobuo Kawahashi ,  Hiroyuki Yano ,  Yukiteru Matsui ,  Gaku Minamihaba ,  Dai Fukushima ,  Nobuyuki Kurashima

IPC分类号： C09G1/02 ,  C09K3/14 ,  H01L21/02 ,  H01L21/321 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02074 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/3212

摘要： A chemical mechanical polishing aqueous dispersion comprises a component (A) composed of abrasive grains, a component (B) composed of at least one of quinolinecarboxylic acid and pyridinecarboxylic acid, a component (C) composed of an organic acid other than quinolinecarboxylic acid and pyridinecarboxylic acid and a component (D) composed of an oxidizing agent, wherein a mass ratio (WB/WC) of the content (WB) of the component (B) to the content (WC) of the component (C) is not less than 0.01 and less than 2, and the concentration of an ammonia component composed of ammonia and ammonium ion is not more than 0.005 mol/litter. According to the chemical mechanical polishing aqueous dispersion, various layers to be processed can be polished with high efficiency, and a sufficiently planarized polished surface of high precision can be obtained.

摘要翻译： 化学机械研磨用水系分散体包含由磨粒构成的成分（A），由喹啉羧酸和吡啶羧酸中的至少一种构成的成分（B），由喹啉羧酸以外的有机酸构成的成分（C），吡啶羧酸 酸和由氧化剂组成的组分（D），其中组分（B）的含量（WB）与组分（C）的含量（WC）的质量比（WB / WC）不小于 0.01和小于2，由氨和铵离子组成的氨组分的浓度不大于0.005mol / l。 根据化学机械研磨水分散体，能够高效率地研磨各种被处理层，能够得到高精度的平坦化的抛光面。

公开(公告)号：US20050037693A1

公开(公告)日：2005-02-17

申请号：US10882362

申请日：2004-07-02

申请人： Kazuhito Uchikura ,  Kazuo Nishimoto ,  Masayuki Hattori ,  Nobuo Kawahashi ,  Hiroyuki Yano ,  Yukiteru Matsui ,  Gaku Minamihaba ,  Dai Fukushima ,  Nobuyuki Kurashima

发明人： Kazuhito Uchikura ,  Kazuo Nishimoto ,  Masayuki Hattori ,  Nobuo Kawahashi ,  Hiroyuki Yano ,  Yukiteru Matsui ,  Gaku Minamihaba ,  Dai Fukushima ,  Nobuyuki Kurashima

IPC分类号： C09G1/02 ,  C09K3/14 ,  H01L21/02 ,  H01L21/321 ,  B24B1/00

CPC分类号： H01L21/02074 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/3212

摘要： A chemical mechanical polishing aqueous dispersion comprises a component (A) composed of abrasive grains, a component (B) composed of at least one of quinolinecarboxylic acid and pyridinecarboxylic acid, a component (C) composed of an organic acid other than quinolinecarboxylic acid and pyridinecarboxylic acid and a component (D) composed of an oxidizing agent, wherein a mass ratio (WB/WC) of the content (WB) of the component (B) to the content (WC) of the component (C) is not less than 0.01 and less than 2, and the concentration of an ammonia component composed of ammonia and ammonium ion is not more than 0.005 mol/litter. According to the chemical mechanical polishing aqueous dispersion, various layers to be processed can be polished with high efficiency, and a sufficiently planarized polished surface of high precision can be obtained.

公开(公告)号：US07833431B2

公开(公告)日：2010-11-16

申请号：US11561071

申请日：2006-11-17

申请人： Gaku Minamihaba ,  Nobuyuki Kurashima ,  Dai Fukushima ,  Yukiteru Matsui ,  Susumu Yamamoto ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Nobuyuki Kurashima ,  Dai Fukushima ,  Yukiteru Matsui ,  Susumu Yamamoto ,  Hiroyuki Yano

IPC分类号： B44C1/22 ,  H01L21/302 ,  C09K13/00 ,  C03C15/00

CPC分类号： H01L21/3212 ,  C09G1/02 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/7684

摘要： An aqueous dispersion for chemical mechanical polishing is provided, which includes water and a resin particle. The resin particles accompany with a projection having a curvature radius ranging from 10 nm to 1.65 μm on a surface. The maximum length of the resin particles is not more than 5 μm and is 2.5 to 25 times as large as the curvature radius.

摘要翻译： 提供了用于化学机械抛光的水分散体，其包括水和树脂颗粒。 树脂颗粒在表面附近具有范围为10nm至1.65μm的曲率半径的突起。 树脂粒子的最大长度为5μm以下，为曲率半径的2.5〜25倍。

公开(公告)号：US20070128873A1

公开(公告)日：2007-06-07

申请号：US11561071

申请日：2006-11-17

申请人： Gaku MINAMIHABA ,  Nobuyuki Kurashima ,  Dai Fukushima ,  Yukiteru Matsui ,  Susumu Yamamoto ,  Hiroyuki Yano

发明人： Gaku MINAMIHABA ,  Nobuyuki Kurashima ,  Dai Fukushima ,  Yukiteru Matsui ,  Susumu Yamamoto ,  Hiroyuki Yano

IPC分类号： C09K13/00 ,  H01L21/461 ,  C03C15/00 ,  H01L21/302 ,  B44C1/22

CPC分类号： H01L21/3212 ,  C09G1/02 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/7684

摘要： An aqueous dispersion for chemical mechanical polishing is provided, which includes water and a resin particle. The resin particles accompany with a projection having a curvature radius ranging from 10 nm to 1.65 μm on a surface. The maximum length of the resin particles is not more than 5 μm and is 2.5 to 25 times as large as the curvature radius.

摘要翻译： 提供了用于化学机械抛光的水分散体，其包括水和树脂颗粒。 树脂颗粒伴随着表面上具有10nm至1.65μm的曲率半径的突起。 树脂粒子的最大长度为5μm以下，为曲率半径的2.5〜25倍。

公开(公告)号：US20070049180A1

公开(公告)日：2007-03-01

申请号：US11508893

申请日：2006-08-24

申请人： Hirotaka Shida ,  Akihiro Takemura ,  Masayuki Hattori ,  Gaku Minamihaba ,  Dai Fukushima ,  Nobuyuki Kurashima ,  Susumu Yamamoto ,  Yoshikuni Tateyama ,  Hiroyuki Yano

发明人： Hirotaka Shida ,  Akihiro Takemura ,  Masayuki Hattori ,  Gaku Minamihaba ,  Dai Fukushima ,  Nobuyuki Kurashima ,  Susumu Yamamoto ,  Yoshikuni Tateyama ,  Hiroyuki Yano

IPC分类号： B24B7/30

CPC分类号： C09G1/02 ,  B24B37/044 ,  H01L21/3212 ,  H01L21/76835 ,  H01L21/7684

摘要： An aqueous dispersion for chemical mechanical polishing contains water, a polyvinylpyrrolidone having a weight-average molecular weight exceeding 200,000, an oxidant, a protective film-forming agent and abrasive grains, the protective film-forming agent containing a first metal compound-forming agent which forms a water-insoluble metal compound, and a second metal compound-forming agent which forms a water-soluble metal compound. The aqueous dispersion is capable of uniformly and stably polishing a metal film at low friction without causing defects in a metal film and an insulating film.

摘要翻译： 用于化学机械抛光的水性分散体含有水，重均分子量超过200,000的聚乙烯吡咯烷酮，氧化剂，保护性成膜剂和磨料颗粒，所述保护性成膜剂含有第一金属化合物形成剂，所述第一金属化合物形成剂 形成水不溶性金属化合物和形成水溶性金属化合物的第二金属化合物形成剂。 水分散体能够以低摩擦力均匀且稳定地抛光金属膜，而不会在金属膜和绝缘膜中产生缺陷。

公开(公告)号：US20110250756A1

公开(公告)日：2011-10-13

申请号：US13165980

申请日：2011-06-22

申请人： Kazuhito UCHIKURA ,  Hirotaka Shida ,  Yuuichi Hashiguchi ,  Gaku Minamihaba ,  Dai Fukushima ,  Yoshikuni Tateyama ,  Hiroyuki Yano

发明人： Kazuhito UCHIKURA ,  Hirotaka Shida ,  Yuuichi Hashiguchi ,  Gaku Minamihaba ,  Dai Fukushima ,  Yoshikuni Tateyama ,  Hiroyuki Yano

IPC分类号： H01L21/304 ,  H01L21/306 ,  B82Y99/00

CPC分类号： H01L21/7684 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053 ,  H01L21/3212

摘要： A chemical mechanical polishing aqueous dispersion comprises (A) abrasive grains, (B) at least one of quinolinecarboxylic acid and pyridinecarboxylic acid, (C) an organic acid other than quinolinecarboxylic acid and pyridinecarboxylic acid, (D) an oxidizing agent, and (E) a nonionic surfactant having a triple bond, the mass ratio (WB/WC) of the amount (WB) of the component (B) to the amount (WC) of the component (C) being 0.01 or more and less than 2, and the component (E) being shown by the following general formula (1), wherein m and n individually represent integers equal to or larger than one, provided that m+n≦50 is satisfied.

摘要翻译： 化学机械研磨用水系分散体包含（A）磨粒，（B）至少一种喹啉羧酸和吡啶羧酸，（C）除喹啉羧酸以外的有机酸和吡啶羧酸，（D）氧化剂，（E ）具有三键的非离子表面活性剂，组分（B）的量（WB）与组分（C）的量（WC）的质量比（WB / WC）为0.01以上且小于2， 并且组分（E）由以下通式（1）表示，其中m和n分别表示等于或大于1的整数，条件是满足m + n＆nlE; 50。

公开(公告)号：US06576554B2

公开(公告)日：2003-06-10

申请号：US09903533

申请日：2001-07-13

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Hiroyuki Yano ,  Dai Fukushima

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Hiroyuki Yano ,  Dai Fukushima

IPC分类号： H01L21302

CPC分类号： H01L21/3212 ,  C11D3/14 ,  C11D11/0047

摘要： A slurry for CMP having a liquid and a plurality of polishing particles, wherein the polishing particle contains an organic particle and a plurality of inorganic particles, and the organic particle and the inorganic particles are unified by thermocompression bonding.

公开(公告)号：US20110062374A1

公开(公告)日：2011-03-17

申请号：US12926358

申请日：2010-11-12

申请人： Gaku Minamihaba ,  Dai Fukushima ,  Nobuyuki Kurashima ,  Susumu Yamamoto ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Dai Fukushima ,  Nobuyuki Kurashima ,  Susumu Yamamoto ,  Hiroyuki Yano

IPC分类号： C09K13/00

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/3212 ,  H01L22/26

摘要： A CMP slurry for metallic film is provided, which includes water, 0.01 to 0.3 wt %, based on a total quantity of the slurry, of polyvinylpyrrolidone having a weight average molecular weight of not less than 20,000, an oxidizing agent, a protective film-forming agent containing a first complexing agent for forming a water-insoluble complex and a second complexing agent for forming a water-soluble complex, and colloidal silica having a primary particle diameter ranging from 5 to 50 nm.

摘要翻译： 提供了一种用于金属膜的CMP浆料，其包括基于浆料总量为0.01至0.3重量％的重均分子量不小于20,000的聚乙烯吡咯烷酮，氧化剂，保护膜 - 含有形成水不溶性络合物的第一络合剂和形成水溶性络合物的第二络合剂的成膜剂，以及一次粒径为5〜50nm的胶体二氧化硅。

公开(公告)号：US08337715B2

公开(公告)日：2012-12-25

申请号：US12926358

申请日：2010-11-12

申请人： Gaku Minamihaba ,  Dai Fukushima ,  Nobuyuki Kurashima ,  Susumu Yamamoto ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Dai Fukushima ,  Nobuyuki Kurashima ,  Susumu Yamamoto ,  Hiroyuki Yano

IPC分类号： C09K13/00

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/3212 ,  H01L22/26

摘要： A CMP slurry for metallic film is provided, which includes water, 0.01 to 0.3 wt %, based on a total quantity of the slurry, of polyvinylpyrrolidone having a weight average molecular weight of not less than 20,000, an oxidizing agent, a protective film-forming agent containing a first complexing agent for forming a water-insoluble complex and a second complexing agent for forming a water-soluble complex, and colloidal silica having a primary particle diameter ranging from 5 to 50 nm.

摘要翻译： 提供了一种用于金属膜的CMP浆料，其包括基于浆料总量为0.01至0.3重量％的重均分子量不小于20,000的聚乙烯吡咯烷酮，氧化剂，保护膜 - 含有形成水不溶性络合物的第一络合剂和形成水溶性络合物的第二络合剂的成膜剂，以及一次粒径为5〜50nm的胶体二氧化硅。

公开(公告)号：US20050218008A1

公开(公告)日：2005-10-06

申请号：US11051624

申请日：2005-01-27

申请人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano ,  Nobuyuki Kurashima

发明人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano ,  Nobuyuki Kurashima

IPC分类号： B24B37/00 ,  C25D7/12 ,  H01L21/00 ,  H01L21/02 ,  H01L21/304 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/768

CPC分类号： H01L21/6723 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/67219

摘要： Disclosed is a method for manufacturing a semiconductor device, comprising depositing an electrically conductive film on an insulating film formed above a semiconductor substrate and having a recessed portion, polishing the surface of the electrically conductive film constituting a processing surface with an alkaline slurry on a polishing cloth to expose the surface of the insulating film to the outside while leaving the electrically conductive film selectively within the recessed portion of the insulating film, treating the processing surface, in which the surface of the insulating film is exposed to the outside by the polishing treatment with the alkaline slurry, with a deionized water and, then, with an acidic washing solution so as to render the processing surface acidic, and transferring the semiconductor substrate from the position on the polishing cloth into a washing unit while keeping the processing surface acidic.

摘要翻译： 公开了一种制造半导体器件的方法，包括在形成于半导体衬底上的绝缘膜上沉积导电膜并具有凹陷部分，在抛光时用碱性浆料抛光构成处理表面的导电膜的表面 布将绝缘膜的表面露出到外部，同时将导电膜选择性地留在绝缘膜的凹陷部分内，通过抛光处理处理绝缘膜的表面暴露于外部的处理表面 用碱性浆料，用去离子水，然后用酸性洗涤溶液使处理表面呈酸性，并将半导体衬底从抛光布上的位置转移到洗涤单元中，同时保持处理表面为酸性。