公开(公告)号：US20220085153A1

公开(公告)日：2022-03-17

申请号：US17196186

申请日：2021-03-09

Applicant: Kioxia Corporation

Inventor： Fuyuma ITO ,  Tatsuhiko KOIDE ,  Hiroki NAKAJIMA ,  Naomi YANAI ,  Tomohiko SUGITA ,  Hakuba KITAGAWA ,  Takaumi MORITA

IPC: H01L29/06 ,  H01L21/768 ,  H01L27/06 ,  H01L21/02

Abstract: A semiconductor substrate includes a surface having a groove. The groove includes an inner bottom surface and an inner wall surface. The inner wall surface has a depression. The depression has a depth from a direction along a surface of the inner wall surface to a width direction of the groove. The substrate being exposed to the inner wall surface.