公开(公告)号：US20220223611A1

公开(公告)日：2022-07-14

申请号：US17369453

申请日：2021-07-07

Applicant: Kioxia Corporation

Inventor： Takatoshi MINAMOTO ,  Sho TOKAIRIN ,  Yoshinao SUZUKI

IPC: H01L27/11556 ,  H01L27/11582 ,  G11C5/02

Abstract: A semiconductor device has a first conductivity type semiconductor substrate. A second conductivity type first impurity diffusion layer is disposed in a surface region of the semiconductor substrate. A resistance element is configured with a first conductivity type second impurity diffusion layer disposed in the first impurity diffusion layer in the surface region of the semiconductor substrate. In a transistor, a gate is connected to an input portion of the resistance element, a source is connected to the first impurity diffusion layer, and a drain is connected to a voltage source higher than the voltage of the input portion. A current source is connected to the source.