公开(公告)号：US20250081435A1

公开(公告)日：2025-03-06

申请号：US18817693

申请日：2024-08-28

Applicant: Kioxia Corporation

Inventor： Masayuki MURASE ,  Yuna MATSUMOTO ,  Mikiya ISHII ,  Naoki KAI ,  Kotaro NODA ,  Kensuke TAKAHASHI

IPC: H10B12/00

Abstract: A semiconductor device may include a channel including an oxide semiconductor layer in a through hole; a first electrode in a first side of the through hole, the first electrode connected to a first side of the channel; a second electrode in a second side of the through hole and connected to a second side of the channel; and an insulating layer having a groove in which the second electrode is accommodated. The insulating layer includes first and second insulating films. The groove extends in a thickness direction. At least a part of the groove has a depth where at least a part of the groove penetrates through the first insulating film and reaches the second insulating film. The second electrode includes a stack of a metal film and a conductive film. The metal film is in contact with at least an inner bottom surface of the groove.