PHOTORESIST COMPOSITION
    1.
    发明申请
    PHOTORESIST COMPOSITION 有权
    光电组合物

    公开(公告)号:US20120028188A1

    公开(公告)日:2012-02-02

    申请号:US13190173

    申请日:2011-07-25

    IPC分类号: G03F7/20 G03F7/027

    CPC分类号: G03F7/0045 G03F7/0397

    摘要: The present invention provides a photoresist composition comprisinga resin which comprises a structural unit derived from a compound having an acid-labile group and which is insoluble or poorly soluble in an alkali aqueous solution but becomes soluble in an alkali aqueous solution by the action of an acid, an acid generator and a compound represented by the formula (I): wherein R1 and R2 are independently in each occurrence a C1-C12 hydrocarbon group, a C1-C6 alkoxy group, a C2-C7 acyl group, a C2-C7 acyloxy group, a C2-C7 alkoxycarbonyl group, a nitro group or a halogen atom, and m and n independently each represent an integer of 0 to 4.

    摘要翻译: 本发明提供一种光致抗蚀剂组合物,其包含树脂,其包含衍生自具有酸不稳定基团的化合物的结构单元,其在碱性水溶液中不溶或难溶于碱性水溶液,但通过 酸,酸产生剂和由式(I)表示的化合物:其中R1和R2在每次出现时独立地为C1-C12烃基,C1-C6烷氧基,C2-C7酰基,C2-C7 酰氧基,C 2 -C 7烷氧基羰基,硝基或卤素原子,m和n分别表示0〜4的整数。

    PHOTORESIST COMPOSITION
    2.
    发明申请
    PHOTORESIST COMPOSITION 有权
    光电组合物

    公开(公告)号:US20110123926A1

    公开(公告)日:2011-05-26

    申请号:US12953606

    申请日:2010-11-24

    IPC分类号: G03F7/004 G03F7/20

    摘要: The present invention provides a photoresist composition comprising a resin, an acid generator and a compound represented by the formula (C1): wherein Rc1 represents an aromatic group which can have one or more substituents, Rc2 and Rc3 independently each represent a hydrogen atom, an aliphatic hydrocarbon group which can have one or more substituents or an aromatic group which can have one or more substituents, Rc4 and RC6 independently each represent a hydrogen atom or an aliphatic hydrocarbon group which can have one or more substituents, or Rc4 and Rc6 are bonded each other to form an alkanediyl group, Rc5 represents an aliphatic hydrocarbon group which can have one or more substituents or an amino group which can have one or two substituents, Rc7 represents a hydrogen atom or an aliphatic hydrocarbon group which can have one or more substituents, or Rc5 and Rc7 are bonded each other to form an alkanediyl group.

    摘要翻译: 本发明提供一种光致抗蚀剂组合物,其包含树脂,酸产生剂和由式(C1)表示的化合物:其中Rc1表示可以具有一个或多个取代基的芳基,Rc2和Rc3各自独立地表示氢原子, 可具有一个或多个取代基的脂族烃基或可具有一个或多个取代基的芳族基团,R c4和RC 6各自独立地表示氢原子或可具有一个或多个取代基的脂族烃基,或R c4和R c6键合 彼此形成烷二基,Rc5表示可具有一个或多个取代基的脂族烃基或可具有一个或两个取代基的氨基,R c7表示氢原子或可具有一个或多个取代基的脂族烃基 ,或Rc5和Rc7彼此键合形成烷二基。

    PROCESS FOR PRODUCING PHOTORESIST PATTERN
    3.
    发明申请
    PROCESS FOR PRODUCING PHOTORESIST PATTERN 审中-公开
    生产光电子图案的工艺

    公开(公告)号:US20110091818A1

    公开(公告)日:2011-04-21

    申请号:US12906522

    申请日:2010-10-18

    IPC分类号: G03F7/20

    摘要: The present invention provides a process for producing a photoresist pattern comprising the following steps (1) to (11): (1) a step of applying the first photoresist composition comprising a resin comprising a structural unit having an acid-labile group in its side chain and being itself insoluble or poorly soluble in an alkali aqueous solution but becoming soluble in an alkali aqueous solution by the action of an acid, and an acid generator, on a substrate followed by conducting drying, thereby forming the first photoresist film, (2) a step of prebaking the first photoresist film, (3) a step of exposing the prebaked first photoresist film to radiation, (4) a step of baking the exposed first photoresist film, (5) a step of developing the baked first photoresist film with the first alkaline developer, thereby forming the first photoresist pattern, (6) a step of forming a coating layer on the first photoresist pattern, (7) a step of applying the second photoresist composition on the coating layer followed by conducting drying, thereby forming the second photoresist film, (8) a step of prebaking the second photoresist film, (9) a step of exposing the prebaked second photoresist film to radiation, (10) a step of baking the exposed second photoresist film, and (11) a step of developing the baked second photoresist film with the second alkaline developer, thereby forming the second photoresist pattern.

    摘要翻译: 本发明提供了一种制备光致抗蚀剂图案的方法,包括以下步骤(1)至(11):(1)将包含具有酸不稳定基团的结构单元的树脂在其侧面上施加的第一光致抗蚀剂组合物的步骤 并且本身不溶于或难溶于碱性水溶液,但是通过酸和酸产生剂在碱性水溶液中溶解,然后进行干燥,从而形成第一光致抗蚀剂膜(2 )预烘烤第一光致抗蚀剂膜的步骤,(3)将预焙蚀的第一光致抗蚀剂膜暴露于辐射的步骤,(4)烘烤曝光的第一光致抗蚀剂膜的步骤,(5) 与第一碱性显影剂,由此形成第一光致抗蚀剂图案,(6)在第一光致抗蚀剂图案上形成涂层的步骤,(7)将第二光致抗蚀剂组合物涂布在涂层上 然后进行干燥,从而形成第二光致抗蚀剂膜,(8)预烘烤第二光致抗蚀剂膜的步骤,(9)将预焙烧的第二光致抗蚀剂膜暴露于辐射的步骤,(10) 第二光致抗蚀剂膜,和(11)用第二碱性显影剂显影所焙烧的第二光致抗蚀剂膜的步骤,从而形成第二光致抗蚀剂图案。

    PROCESS FOR PRODUCING PHOTORESIST PATTERN
    5.
    发明申请
    PROCESS FOR PRODUCING PHOTORESIST PATTERN 审中-公开
    生产光电子图案的工艺

    公开(公告)号:US20110165521A1

    公开(公告)日:2011-07-07

    申请号:US12978952

    申请日:2010-12-27

    IPC分类号: G03F7/20

    摘要: Process for producing a photoresist pattern containing the steps: (A) applying a first photoresist composition containing a resin having a structural unit containing an acid-labile group in its side chain, an acid generator and a cross-linking agent on a substrate to form a first photoresist film, exposing the film to radiation followed by developing the film, to form a first photoresist pattern; (B) making the first photoresist pattern inactive to radiation, insoluble in an alkaline developer or insoluble in a second photoresist composition in step (C); (C) applying a second photoresist composition containing a resin having a structural unit containing an acid-labile group in its side chain and at least one acid generator of formula (I) or (II) defined in the specification, on the first photoresist pattern, to form a second photoresist film, exposing the film to radiation; and (D) developing the exposed film, to form a second photoresist pattern.

    摘要翻译: 制造光致抗蚀剂图案的方法包括以下步骤:(A)在基材上涂布含有其侧链上含有酸不稳定基团的结构单元的树脂的第一光致抗蚀剂组合物,在基材上形成酸产生剂和交联剂,以形成 第一光致抗蚀剂膜,将膜暴露于辐射,随后显影膜,以形成第一光致抗蚀剂图案; (B)使步骤(C)中第一光致抗蚀剂图案对放射线不起作用,不溶于碱性显影剂或不溶于第二光致抗蚀剂组合物; (C)在第一光致抗蚀剂图案上,在其侧链中施加含有具有含有酸不稳定基团的结构单元的树脂的第二光致抗蚀剂组合物和至少一种在说明书中定义的式(I)或(II)的酸产生剂 ,以形成第二光致抗蚀剂膜,将膜暴露于辐射; 和(D)显影曝光的薄膜,形成第二光刻胶图形。

    PHOTORESIST COMPOSITION
    6.
    发明申请
    PHOTORESIST COMPOSITION 审中-公开
    光电组合物

    公开(公告)号:US20110065047A1

    公开(公告)日:2011-03-17

    申请号:US12880750

    申请日:2010-09-13

    CPC分类号: C07C271/22 G03F7/0397

    摘要: The present invention provides a photoresist composition comprising a resin, an acid generator and a compound represented by the formula (I): wherein R1, R2 and R3 each independently represent a hydrogen atom or a C1-C4 alkyl group, A1 represents a single bond or a C1-C2 alkylene group, R4 and R5 each independently represent a hydrogen atom or a C1-C2 alkyl group, R6 and R7 each independently represent a hydrogen atom etc.

    摘要翻译: 本发明提供一种光致抗蚀剂组合物,其包含树脂,酸产生剂和由式(I)表示的化合物:其中R1,R2和R3各自独立地表示氢原子或C1-C4烷基,A1表示单键 或C1-C2亚烷基,R4和R5各自独立地表示氢原子或C1-C2烷基,R6和R7各自独立地表示氢原子等。

    POLYMER AND CHEMICALLY AMPLIFIED RESIST COMPOSITION COMPRISING THE SAME
    7.
    发明申请
    POLYMER AND CHEMICALLY AMPLIFIED RESIST COMPOSITION COMPRISING THE SAME 有权
    聚合物和化学稳定化合物包括它们

    公开(公告)号:US20090264565A1

    公开(公告)日:2009-10-22

    申请号:US12426038

    申请日:2009-04-17

    摘要: The present invention provides a polymer comprising a structural unit represented by the formula (Ia) or (Ib): wherein R1 represents a hydrogen atom etc., R2 represents a linear, branched chain or cyclic C1-C8 alkyl group, R3 represents a methyl group, n represents an integer of 0 to 14, Z1 represents a single bond etc., k represents an integer of 1 to 4, R4 and R5 each independently represents a hydrogen atom etc., and m represents an integer of 1 to 3, a structural unit represented by the formula (II): wherein R6 and R7 each independently represents a hydrogen atom etc., R8 represents a methyl group, R9 represents a hydrogen atom etc., Z2 represents a single bond etc., k′ represents an integer of 1 to 4, Z′ represents a group capable to eliminate by an action of an acid, and a structural unit represented by the formula (III): wherein R10 represents a carboxyl group etc., l′ represents an integer of 0 to 3, Z3 represents a single bond etc., and k″ represents an integer of 1 to 4.

    摘要翻译: 本发明提供一种包含由式(Ia)或(Ib)表示的结构单元的聚合物:其中R1表示氢原子等,R2表示直链,支链或环状的C1-C8烷基,R3表示甲基 基团,n表示0〜14的整数,Z1表示单键等,k表示1〜4的整数,R4和R5各自独立地表示氢原子等,m表示1〜3的整数, 由式(II)表示的结构单元:其中R6和R7各自独立地表示氢原子等,R8表示甲基,R9表示氢原子等,Z2表示单键等,k'表示 1〜4的整数,Z'表示能够通过酸的除去的基团和由式(III)表示的结构单元:其中,R 10表示羧基等,l'表示0〜 3,Z 3表示单键等,k“表示1〜4的整数。

    CHEMICALLY AMPLIFIED RESIST COMPOSITION AND CHEMICALLY AMPLIFIED RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY
    8.
    发明申请
    CHEMICALLY AMPLIFIED RESIST COMPOSITION AND CHEMICALLY AMPLIFIED RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY 有权
    化学放大抗蚀剂组合物和化学放大抗蚀剂组合物

    公开(公告)号:US20090220890A1

    公开(公告)日:2009-09-03

    申请号:US12395963

    申请日:2009-03-02

    IPC分类号: G03F7/039 G03F7/20

    摘要: A chemically amplified resist composition, comprising: a resin which includes a structural unit having an acid-labile group in a side chain, a structural unit represented by the formula (I) and a structural unit having a polycyclic lactone structure, and which is soluble in an organic solvent and insoluble or poorly soluble in an alkali aqueous solution but rendered soluble in an alkali aqueous solution by the action of an acid; and an acid generator represented by the formula (II). wherein X1 represents a hydrogen atom, a C1 to C4 alkyl group, etc., Y in each occurrence independently represent a hydrogen atom or an alkyl group, and n is an integer of 1 to 14, R1 to R4 independently represent a hydrogen atom, an alkyl group, etc., and A+ represents an organic counterion, E− represents CF3SO3—, C2F5SO3—, C4F9SO3—, etc., Y1 and Y2 independently represent a fluorine atom or a C1 to C6 perfluoroalkyl group.

    摘要翻译: 一种化学放大抗蚀剂组合物,其包含:树脂,其包含在侧链中具有酸不稳定基团的结构单元,由式(I)表示的结构单元和具有多环内酯结构的结构单元,并且其是可溶的 在有机溶剂中,不溶于或难溶于碱水溶液,但通过酸的作用可溶于碱水溶液; 和由式(II)表示的酸发生剂。 其中X 1表示氢原子,C 1〜C 4烷基等,Y各自独立地表示氢原子或烷基,n表示1〜14的整数,R 1〜R 4分别表示氢原子, 烷基等,A +表示有机抗衡离子,E表示CF 3 SO 3 - ,C 2 F 5 SO 3 - ,C 4 F 9 SO 3 - 等,Y 1和Y 2分别表示氟原子或C 1〜C 6全氟烷基。