公开(公告)号：US12034082B2

公开(公告)日：2024-07-09

申请号：US17029889

申请日：2020-09-23

Applicant: LG Display Co., Ltd.

Inventor： JeongSuk Yang ,  KwangMin Jo ,  Sohyung Lee

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/32 ,  H01L29/66 ,  H10K59/121 ,  H10K59/124

CPC classification number: H01L29/78696 ,  H01L27/1225 ,  H01L29/6675 ,  H01L29/78609 ,  H01L29/78621 ,  H01L29/7869 ,  H10K59/1213 ,  H10K59/124

Abstract: An embodiment of the present disclosure provides a thin film transistor, a method of manufacturing the thin film transistor and a display apparatus including the thin film transistor. The thin film transistor includes an active layer on a substrate, a gate electrode disposed apart from the active layer to at least partially overlap the active layer, and a gate insulation layer between the active layer and the gate electrode. The gate insulation layer can cover an entire top surface of the active layer facing the gate electrode. The active layer can include a channel part overlapping the gate electrode, a conductivity-providing part which does not overlap the gate electrode, and an offset part between the channel part and the conductivity-providing part. The offset part may not overlap the gate electrode, and the conductivity-providing part can be doped with a dopant.

公开(公告)号：US20230076478A1

公开(公告)日：2023-03-09

申请号：US17895920

申请日：2022-08-25

Applicant: LG Display Co., Ltd.

Inventor： KwangMin Jo ,  GiSang Hong

IPC: H01L29/786 ,  H01L27/32

Abstract: A thin film transistor substrate and a display device comprising the same are provided. The thin film transistor substrate comprises a first thin film transistor and a second thin film transistor on a base substrate, wherein the first thin film transistor includes a first active layer on the base substrate, and a first gate electrode spaced apart from the first active layer, the second thin film transistor includes a second active layer on the base substrate, and a second gate electrode spaced apart from the second active layer, and a mobility of the first active layer is greater than a mobility of the second active layer.