公开(公告)号：US20190081262A1

公开(公告)日：2019-03-14

申请号：US16129114

申请日：2018-09-12

Applicant: LG Display Co., Ltd.

Inventor： Min-Jee KIM ,  Sung-Il WOO ,  Hye-Ock CHOI ,  Ji-Yeon KANG

IPC: H01L51/50 ,  H01L51/52 ,  H01L27/32 ,  C08L29/04 ,  C08K3/36 ,  C08K3/22

Abstract: A quantum dot emitting diode includes first and second electrodes facing each other; a quantum dot emitting material layer between the first and second electrodes; and an electron transporting layer including an electron transporting material and disposed between the quantum dot emitting material layer and the second electrode, wherein the electron transporting material includes a core of metal oxide and a shell of silica.

公开(公告)号：US20200161577A1

公开(公告)日：2020-05-21

申请号：US16689919

申请日：2019-11-20

Applicant: LG Display Co., Ltd.

Inventor： Ji-Yeon KANG ,  Min-Jee KIM ,  Jae-Hyun PARK

IPC: H01L51/50

Abstract: A quantum dot light emitting diode comprises first and second electrodes facing each other; a hole injection layer disposed between the first electrode and the second electrode and having a first HOMO level; a first hole transporting layer disposed between the hole injection layer and the second electrode and having a second HOMO level that is lower than the first HOMO level; a second hole transporting layer disposed between the first hole transporting layer and the second electrode and having a third HOMO level that is lower than the second HOMO level; and a quantum dot light emitting layer disposed between the second hole transporting layer and the second electrode and having a fourth HOMO level that is lower than the third HOMO level, wherein a difference between the first HOMO level and the second HOMO level is greater than a difference between the second HOMO level and the third HOMO level and less than a difference between the third HOMO level and the fourth HOMO level.