THERMOELECTRIC ELEMENT
    1.
    发明公开

    公开(公告)号:US20240357936A1

    公开(公告)日:2024-10-24

    申请号:US18758324

    申请日:2024-06-28

    CPC classification number: H10N10/17 H10N10/856

    Abstract: A thermoelectric element according to an embodiment of the present invention comprises: a first metal substrate; a first resin layer disposed on the first metal substrate and in direct contact with the first metal substrate; a plurality of first electrodes disposed on the first resin layer; a plurality of thermoelectric legs disposed on the plurality of first electrodes; a plurality of second electrodes disposed on the plurality of thermoelectric legs; a second resin layer disposed on the plurality of second electrodes; and a second metal substrate disposed on the second resin layer, wherein the first resin layer comprises a polymeric resin and an inorganic filler and at least a part of side surfaces of the plurality of first electrodes are embedded in the first resin layer.

    THERMOELECTRIC ELEMENT
    2.
    发明公开

    公开(公告)号:US20240180036A1

    公开(公告)日:2024-05-30

    申请号:US18577744

    申请日:2022-07-12

    CPC classification number: H10N10/817 H10N10/17

    Abstract: A thermoelectric element according to an embodiment of the present invention comprises: a first substrate; an insulation layer disposed on the first substrate; a first electrode disposed on the insulation layer; a bonding layer disposed on the first electrode; a semiconductor structure disposed on the bonding layer; a second electrode disposed on the semiconductor structure; and a second substrate disposed on the second electrode, wherein the upper surface of the insulation layer includes a first concave surface vertically overlapping the first electrode, the bonding layer includes a first area vertically overlapping the first concave surface and the semiconductor structure and a second area which vertically overlaps the first concave surface and does not vertically overlap the semiconductor structure, and a void density of the first area is smaller than that of the second area.

    THERMOELECTRIC DEVICE
    4.
    发明公开

    公开(公告)号:US20240040929A1

    公开(公告)日:2024-02-01

    申请号:US18028016

    申请日:2021-07-20

    CPC classification number: H10N10/17

    Abstract: A thermoelectric device according to an embodiment of the present invention comprises: a first substrate; an insulating layer disposed on the first substrate; a first electrode unit disposed on the insulating layer; a first terminal electrode and a second terminal electrode disposed on the insulating layer and protruding from the first electrode unit toward the first outer side of the first substrate; a semiconductor structure disposed on the first electrode unit; a second electrode unit disposed on the semiconductor structure; and a second substrate unit disposed on the second electrode unit. The second substrate unit comprises a plurality of second substrates disposed away from one another. The first electrode unit comprises: a plurality of electrode groups respectively overlapping the plurality of second substrates vertically; and a first connection electrode connecting two different electrode groups among the plurality of electrode groups. The long side of the first connection electrode is longer than the long side of the first electrode included in the plurality of electrode groups. At least a part of the first connection electrode does not overlap the plurality of second substrates vertically.

    THERMOELECTRIC ELEMENT
    5.
    发明公开

    公开(公告)号:US20230309406A1

    公开(公告)日:2023-09-28

    申请号:US18017431

    申请日:2021-07-15

    CPC classification number: H10N10/817 H10N10/17

    Abstract: According to an embodiment, the present invention comprises: a first electrode; a first conductive bonding member disposed on the first electrode; and a plurality of semiconductor structures disposed on the first conductive bonding member, wherein the first conductive bonding member comprises first arrangement portions on which the plurality of semiconductor structures are arranged, respectively, and a first barrier portion positioned between the first arrangement portions, wherein the thickness of the first barrier portion is 2.5 times or less than the thickness of the first arrangement portion.

    THERMOELECTRIC DEVICE
    6.
    发明申请

    公开(公告)号:US20230044428A1

    公开(公告)日:2023-02-09

    申请号:US17793835

    申请日:2021-10-25

    Abstract: A thermoelectric device according to one embodiment of the present invention includes a substrate, a first insulating layer disposed on the substrate, a second insulating layer disposed on the first insulating layer and having an area smaller than an area of the first insulating layer, a plurality of first electrodes disposed on the second insulating layer, a plurality of semiconductor structures disposed on the plurality of first electrodes, and a plurality of second electrodes disposed on the plurality of semiconductor structures, wherein the second insulating layer includes an overlapping region in which the plurality of first electrodes, the plurality of second electrodes, and the plurality of semiconductor structures overlap vertically and a protruding pattern protruding from the overlapping region toward a first outer side the substrate.

    THERMOELECTRIC ELEMENT
    7.
    发明申请

    公开(公告)号:US20210050504A1

    公开(公告)日:2021-02-18

    申请号:US17041695

    申请日:2019-04-02

    Abstract: A thermoelectric element according to an embodiment of the present invention comprises: a first metal substrate; a first resin layer disposed on the first metal substrate and in direct contact with the first metal substrate; a plurality of first electrodes disposed on the first resin layer; a plurality of thermoelectric legs disposed on the plurality of first electrodes; a plurality of second electrodes disposed on the plurality of thermoelectric legs; a second resin layer disposed on the plurality of second electrodes; and a second metal substrate disposed on the second resin layer, wherein the first resin layer comprises a polymeric resin and an inorganic filler and at least a part of side surfaces of the plurality of first electrodes are embedded in the first resin layer.

    THERMOELECTRIC ELEMENT AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20210091293A1

    公开(公告)日:2021-03-25

    申请号:US16962606

    申请日:2019-01-22

    Abstract: A thermoelectric element according to an embodiment of the present invention comprises: a first metallic substrate; a first resin layer which is disposed on the first metallic substrate and comes in direct contact with the first metallic substrate; a plurality of first electrodes disposed on the first resin layer; a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs disposed on the plurality of first electrodes; a plurality of second electrodes disposed on the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs; a second resin layer disposed on the plurality of second electrodes; and a second metallic substrate disposed on the second resin layer, wherein a surface of the first metallic substrate that faces the first resin layer comprises a first region and a second region disposed inside the first region, wherein a surface roughness of the second region is greater than a surface roughness of the first region, wherein the first resin layer is disposed on the second region.

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