Implementing a read setup in 3D NAND flash memory to reduce voltage threshold deviation over time

    公开(公告)号:US11385839B1

    公开(公告)日:2022-07-12

    申请号:US17242123

    申请日:2021-04-27

    Abstract: A method of operating a memory is provided. The method includes, in response to an access of a block of memory updating a first queue to identify the accessed block in response to a determination that the block is not already identified in the first queue and a determination that the block is not already identified in a second queue, and updating the second queue to identify the accessed block of memory in response to a determination that the block is already identified in the first queue. The method further includes scanning the second queue to identify, as a read setup candidate, each block of the memory that is identified as present in the second queue longer than a threshold, and performing a read setup operation on a block of memory that has been identified as the read setup candidate.

Patent Agency Ranking