公开(公告)号：US20240339447A1

公开(公告)日：2024-10-10

申请号：US18603426

申请日：2024-03-13

Applicant: MEDIATEK INC.

Inventor： Tzung-Lin LI ,  Yuan-Fu CHUNG ,  Tung-Hsing LEE

IPC: H01L27/02 ,  H01L29/868

CPC classification number: H01L27/0255 ,  H01L29/868

Abstract: An electrostatic discharge protection device is provided. The electrostatic discharge protection device includes a P-type semiconductor substrate, P-type and N-type well regions, a deep N-type well region, first N-type and P-type doped regions, second N-type and P-type doped regions. The P-type and N-type well regions are located in the P-type semiconductor substrate. The deep N-type well region is located in the P-type semiconductor substrate and below the P-type well region. The first N-type and P-type doped regions are located on the P-type well region. The second N-type and P-type doped regions are located on the N-type well region. The first P-type doped region is electrically connected to the second N-type doped region.