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    Metal-oxide based thin-film transistors with fluorinated active layer
    1.
    发明授权
    Metal-oxide based thin-film transistors with fluorinated active layer 有权
    具有氟化活性层的金属氧化物基薄膜晶体管

    公开(公告)号：US08878176B2

    公开(公告)日：2014-11-04

    申请号：US13572269

    申请日：2012-08-10

    申请人： Man Wong ,  Hoi Sing Kwok ,  Zhi Ye

    发明人： Man Wong ,  Hoi Sing Kwok ,  Zhi Ye

    IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L29/786

    CPC分类号： H01L29/7869

    摘要： A thin-film transistor with a fluorinated channel and fluorinated source and drain regions and methods of fabrication are provided. The thin-film transistor includes: a substrate; a semiconductor active layer of fluorine-doped metal-oxide formed on the substrate; fluorine-doped source and drain regions disposed adjacent to the semiconductor active layer; a gate electrode disposed over the semiconductor active layer, configured to induce a continuous conduction channel between the source and drain regions; and a gate dielectric material separating the gate electrode and the channel.

    摘要翻译： 提供具有氟化通道和氟化源极和漏极区域的薄膜晶体管及其制造方法。 薄膜晶体管包括：基板; 形成在所述基板上的掺杂氟化金属氧化物的半导体有源层; 配置在与半导体活性层相邻的氟掺杂源极和漏极区域; 设置在所述半导体有源层上方的栅电极，被配置为在所述源极和漏极区域之间引起连续的导电沟道; 以及分隔栅电极和沟道的栅介质材料。