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1.发明授权Apparatus comprising a single photon photodetector having reduced afterpulsing and method therefor 有权包括具有减小的脉冲后的单光子光电检测器的装置及其方法公开(公告)号：US07626193B2
公开(公告)日：2009-12-01
申请号：US11277562
申请日：2006-03-27
IPC分类号： H01L31/058
CPC分类号： H01L31/1075
摘要： A single-photon detector is disclosed that provides reduced afterpulsing without some of the disadvantages for doing so in the prior art. An embodiment of the present invention provides a stimulus pulse to the active area of an avalanche photodetector to stimulate charges that are trapped in energy trap states to detrap. In some embodiments of the present invention, the stimulus pulse is a thermal pulse.
摘要翻译： 公开了一种提供减少的脉冲后的单光子检测器，而没有在现有技术中这样做的一些缺点。 本发明的实施例提供了一种到雪崩光电探测器的有源区域的刺激脉冲，以刺激被捕获在能量陷阱状态中的电荷以去除。 在本发明的一些实施例中，刺激脉冲是热脉冲。
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2.发明授权Apparatus comprising a single photon photodetector having reduced afterpulsing and method therefor 有权包括具有减小的脉冲后的单光子光电检测器的装置及其方法公开(公告)号：US07902570B2
公开(公告)日：2011-03-08
申请号：US12576362
申请日：2009-10-09
IPC分类号： H01L31/107
CPC分类号： H01L31/1075
摘要： A single-photon detector is disclosed that provides reduced afterpulsing without some of the disadvantages for doing so in the prior art. An embodiment of the present invention provides a stimulus pulse to the active area of an avalanche photodetector to stimulate charges that are trapped in energy trap states to detrap. In some embodiments of the present invention, the stimulus pulse is a thermal pulse.
摘要翻译： 公开了一种提供减少的脉冲后的单光子检测器，而没有在现有技术中这样做的一些缺点。 本发明的实施例提供了一种到雪崩光电探测器的有源区域的刺激脉冲，以刺激被捕获在能量陷阱状态中的电荷以去除。 在本发明的一些实施例中，刺激脉冲是热脉冲。
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3.发明申请Apparatus Comprising a Single Photon Photodetector Having Reduced Afterpulsing and Method Therefor 有权包含具有减少的脉冲后的单个光子光电检测器的装置及其方法公开(公告)号：US20100025798A1
公开(公告)日：2010-02-04
申请号：US12576362
申请日：2009-10-09
IPC分类号： H01L31/107
CPC分类号： H01L31/1075
摘要： A single-photon detector is disclosed that provides reduced afterpulsing without some of the disadvantages for doing so in the prior art. An embodiment of the present invention provides a stimulus pulse to the active area of an avalanche photodetector to stimulate charges that are trapped in energy trap states to detrap. In some embodiments of the present invention, the stimulus pulse is a thermal pulse.
摘要翻译： 公开了一种提供减少的脉冲后的单光子检测器，而没有在现有技术中这样做的一些缺点。 本发明的实施例提供了一种到雪崩光电探测器的有源区域的刺激脉冲，以刺激被捕获在能量陷阱状态中的电荷以去除。 在本发明的一些实施例中，刺激脉冲是热脉冲。
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公开(公告)号：US07808015B2
公开(公告)日：2010-10-05
申请号：US12051650
申请日：2008-03-19
IPC分类号： H01L21/00
CPC分类号： H01L31/1075
摘要： Avalanche photodiodes are provided, wherein the APDs provide both high optical coupling efficiency and low dark count rate. The APDs are formed such that their cap layer has an active region of sufficient width to enable high optical coupling efficiency but the APD still exhibits a low dark count rate. These cap layers have a device area with an active region and an edge region, wherein the size of the active region is substantially matched to the mode-field diameter of an optical beam, and wherein the size of the edge region is made small so as to reduce the number of defects included. These APD designs maintain a substantially uniform gain and breakdown voltage, as necessary for practical use.
摘要翻译： 提供雪崩光电二极管，其中APD提供高光耦合效率和低暗计数率。 APD形成为使得其盖层具有足够宽度的有源区域以实现高的光耦合效率，但是APD仍然表现出低的暗计数率。 这些盖层具有具有有源区域和边缘区域的器件区域，其中有源区域的尺寸基本上与光束的模场直径匹配，并且其中使边缘区域的尺寸变小，以便 减少包括的缺陷数量。 这些APD设计保持实质使用所需的基本均匀的增益和击穿电压。
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公开(公告)号：US07964435B2
公开(公告)日：2011-06-21
申请号：US11682999
申请日：2007-03-07
IPC分类号： H01L21/00
CPC分类号： H01L21/223 , H01L31/18
摘要： A method for controlling dopant diffusion is disclosed. Using certain control parameters that are not used in the prior art, the method provides an unprecedented measure of control over the dopant diffusion process. The control parameters include, among others, the size of the diffusion windows in the diffusion mask and the proximity of the diffusion windows to a dopant sink. In some embodiments, the diffusion process is conducted in an epi-reactor.
摘要翻译： 公开了一种控制掺杂剂扩散的方法。 使用现有技术中未使用的某些控制参数，该方法提供了前所未有的对掺杂剂扩散过程的控制测量。 控制参数包括扩散掩模中的扩散窗口的尺寸和扩散窗口与掺杂剂阱的接近程度。 在一些实施方案中，扩散过程在外延反应器中进行。
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公开(公告)号：US07378689B2
公开(公告)日：2008-05-27
申请号：US11251965
申请日：2005-10-17
IPC分类号： H01L29/80
CPC分类号： H01L31/1075
摘要： Avalanche photodiodes are provided, wherein the APDs provide both high optical coupling efficiency and low dark count rate. The APDs are formed such that their cap layer has an active region of sufficient width to enable high optical coupling efficiency but the APD still exhibits a low dark count rate. These cap layers have a device area with an active region and an edge region, wherein the size of the active region is substantially matched to the mode-field diameter of an optical beam, and wherein the size of the edge region is made small so as to reduce the number of defects included. These APD designs maintain a substantially uniform gain and breakdown voltage, as necessary for practical use.
摘要翻译： 提供雪崩光电二极管，其中APD提供高光耦合效率和低暗计数率。 APD形成为使得其盖层具有足够宽度的有源区域以实现高的光耦合效率，但是APD仍然表现出低的暗计数率。 这些盖层具有具有有源区域和边缘区域的器件区域，其中有源区域的尺寸基本上与光束的模场直径匹配，并且其中使边缘区域的尺寸变小，以便 减少包括的缺陷数量。 这些APD设计保持实质使用所需的基本均匀的增益和击穿电压。
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公开(公告)号：US07582920B2
公开(公告)日：2009-09-01
申请号：US12051651
申请日：2008-03-19
IPC分类号： H01L21/00
CPC分类号： H01L31/1075
摘要： Avalanche photodiodes are provided, wherein the APDs provide both high optical coupling efficiency and low dark count rate. The APDs are formed such that their cap layer has an active region of sufficient width to enable high optical coupling efficiency but the APD still exhibits a low dark count rate. These cap layers have a device area with an active region and an edge region, wherein the size of the active region is substantially matched to the mode-field diameter of an optical beam, and wherein the size of the edge region is made small so as to reduce the number of defects included. These APD designs maintain a substantially uniform gain and breakdown voltage, as necessary for practical use.
摘要翻译： 提供雪崩光电二极管，其中APD提供高光耦合效率和低暗计数率。 APD形成为使得其盖层具有足够宽度的有源区域以实现高的光耦合效率，但是APD仍然表现出低的暗计数率。 这些盖层具有具有有源区域和边缘区域的器件区域，其中有源区域的尺寸基本上与光束的模场直径匹配，并且其中使边缘区域的尺寸变小，以便 减少包括的缺陷数量。 这些APD设计保持实质使用所需的基本均匀的增益和击穿电压。
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公开(公告)号：US07553734B2
公开(公告)日：2009-06-30
申请号：US11251964
申请日：2005-10-17
IPC分类号： H01L21/20
CPC分类号： H01L31/1075
摘要： Methods for fabricating an avalanche photodiode (APD), wherein the APD provides both high optical coupling efficiency and low dark count rate. The APD is formed such that it provides an active region of sufficient width to enable high optical coupling efficiency and a low dark count rate. Some APDs fabricated using these methods have a device area with an active region and an edge region, wherein the size of the active region is substantially matched to the mode-field diameter of an optical beam, and wherein the size of the edge region is substantially minimized and further wherein the device region maintains a substantially uniform gain and breakdown voltage.
摘要翻译： 制造雪崩光电二极管（APD）的方法，其中APD提供高光耦合效率和低暗计数率。 APD形成为使得其提供足够宽的有源区域以实现高的光耦合效率和低的暗计数率。 使用这些方法制造的一些APD具有具有有源区域和边缘区域的器件区域，其中有源区域的尺寸基本上与光束的模场直径匹配，并且其中边缘区域的尺寸基本上 最小化并且进一步地，其中器件区域保持基本均匀的增益和击穿电压。
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公开(公告)号：US20080164555A1
公开(公告)日：2008-07-10
申请号：US12051651
申请日：2008-03-19
IPC分类号： H01L31/107
CPC分类号： H01L31/1075
摘要： Avalanche photodiodes are provided, wherein the APDs provide both high optical coupling efficiency and low dark count rate. The APDs are formed such that their cap layer has an active region of sufficient width to enable high optical coupling efficiency but the APD still exhibits a low dark count rate. These cap layers have a device area with an active region and an edge region, wherein the size of the active region is substantially matched to the mode-field diameter of an optical beam, and wherein the size of the edge region is made small so as to reduce the number of defects included. These APD designs maintain a substantially uniform gain and breakdown voltage, as necessary for practical use.
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公开(公告)号：US20080220598A1
公开(公告)日：2008-09-11
申请号：US11682999
申请日：2007-03-07
IPC分类号： H01L21/22
CPC分类号： H01L21/223 , H01L31/18
摘要： A method for controlling dopant diffusion is disclosed. Using certain control parameters that are not used in the prior art, the method provides an unprecedented measure of control over the dopant diffusion process. The control parameters include, among others, the size of the diffusion windows in the diffusion mask and the proximity of the diffusion windows to a dopant sink. In some embodiments, the diffusion process is conducted in an epi-reactor.
摘要翻译： 公开了一种控制掺杂剂扩散的方法。 使用现有技术中未使用的某些控制参数，该方法提供了前所未有的对掺杂剂扩散过程的控制测量。 控制参数包括扩散掩模中的扩散窗口的尺寸和扩散窗口与掺杂剂阱的接近程度。 在一些实施方案中，扩散过程在外延反应器中进行。
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