公开(公告)号：US20050152820A1

公开(公告)日：2005-07-14

申请号：US11010139

申请日：2004-12-10

申请人： Mark D'Evelyn ,  Kristi Narang ,  Robert Giddings ,  Steven Tysoe ,  John Lucek ,  Suresh Vagarali ,  Robert Leonelli ,  Joel Dysart

发明人： Mark D'Evelyn ,  Kristi Narang ,  Robert Giddings ,  Steven Tysoe ,  John Lucek ,  Suresh Vagarali ,  Robert Leonelli ,  Joel Dysart

IPC分类号： A61K9/64 ,  B01D9/00 ,  B01J3/00 ,  B01J3/06 ,  B01J19/02 ,  B65D1/40 ,  B65D3/22 ,  B65D6/14 ,  C30B9/00 ,  C30B29/40

CPC分类号： B01J3/008 ,  B01J3/062 ,  B01J19/02 ,  B01J2203/0665 ,  B01J2219/00777 ,  B01J2219/0236 ,  B01J2219/024 ,  C30B7/10 ,  C30B9/00 ,  C30B29/40 ,  C30B29/406 ,  Y02P20/544 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1024 ,  Y10T117/108 ,  Y10T117/1092

摘要： A capsule for containing at least one reactant and a supercritical fluid in a substantially air-free environment under high pressure, high temperature processing conditions. The capsule includes a closed end, at least one wall adjoining the closed end and extending from the closed end; and a sealed end adjoining the at least one wall opposite the closed end. The at least one wall, closed end, and sealed end define a chamber therein for containing the reactant and a solvent that becomes a supercritical fluid at high temperatures and high pressures. The capsule is formed from a deformable material and is fluid impermeable and chemically inert with respect to the reactant and the supercritical fluid under processing conditions, which are generally above 5 kbar and 550° C. and, preferably, at pressures between 5 kbar and 80 kbar and temperatures between 550° C. and about 1500° C. The invention also includes methods of filling the capsule with the solvent and sealing the capsule, as well as an apparatus for sealing the capsule.

摘要翻译： 一种用于在高压，高温处理条件下在基本无空气环境中含有至少一种反应物和超临界流体的胶囊。 所述胶囊包括封闭端，邻近所述封闭端并从所述封闭端延伸的至少一个壁; 以及与所述封闭端相对的所述至少一个壁相邻的密封端。 至少一个壁，封闭端和密封端在其中限定一个室，用于容纳反应物和在高温和高压下成为超临界流体的溶剂。 胶囊由可变形材料形成，并且在加工条件下相对于反应物和超临界流体是流体不可渗透和化学惰性的，其通常高于5kbar和550℃，并且优选在5kbar和80kPa之间的压力 kbar和550℃至约1500℃之间的温度。本发明还包括用溶剂填充胶囊并密封胶囊的方法以及用于密封胶囊的装置。

公开(公告)号：US20080087919A1

公开(公告)日：2008-04-17

申请号：US11973182

申请日：2007-10-05

申请人： Steven Tysoe ,  Dong-Sil Park ,  John Leman ,  Mark D'Evelyn ,  Kristi Narang ,  Huicong Hong

发明人： Steven Tysoe ,  Dong-Sil Park ,  John Leman ,  Mark D'Evelyn ,  Kristi Narang ,  Huicong Hong

IPC分类号： H01L29/205 ,  C01B21/00 ,  C30B15/00

CPC分类号： C30B9/00 ,  C30B29/403

摘要： A method for growing a nitride crystal and a crystalline composition selected from one of AlN, InGaN, AlGaInN, InGaN, and AlGaNInN is provided. The composition comprises a true single crystal, grown from a single nucleus, at least 1 mm in diameter, free of lateral strain and tilt boundaries, with a dislocation density less than about 104 cm−2.

摘要翻译： 提供了用于生长氮化物晶体和选自AlN，InGaN，AlGaInN，InGaN和AlGaNInN中的晶体组成的方法。 该组合物包含从单个细胞核生长的直径至少为1mm，无横向应变和倾斜边界的真实单晶，位错密度小于约10 -4 cm -3， 2 。

公开(公告)号：US20060096521A1

公开(公告)日：2006-05-11

申请号：US11300660

申请日：2005-12-12

申请人： Mark D'Evelyn ,  Thomas Anthony ,  Stephen Arthur ,  Lionel Levinson ,  John Lucek ,  Larry Rowland ,  Suresh Vagarali

发明人： Mark D'Evelyn ,  Thomas Anthony ,  Stephen Arthur ,  Lionel Levinson ,  John Lucek ,  Larry Rowland ,  Suresh Vagarali

IPC分类号： H01L21/322

CPC分类号： B01J3/065 ,  B01J3/062 ,  B01J2203/0635 ,  B01J2203/0645 ,  B01J2203/066 ,  B01J2203/0665 ,  B01J2203/067 ,  B01J2203/0675 ,  B01J2203/069 ,  C30B33/00 ,  Y10T117/1004 ,  Y10T117/1008

摘要： A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high pressure cell and placed in a high pressure apparatus, for processing under reaction conditions of sufficiently high pressure and high temperature for a time adequate for one or more of removing defects or relieving strain in the single crystal.

摘要翻译： 通过提供含有缺陷的晶体和压力介质，开始在高压高温（HP / HT）下除去非金刚石晶体中的缺陷或解除应变的方法。 将晶体和压力介质设置在高压电池中并放置在高压设备中，用于在足够高的压力和高温的反应条件下进行处理足够的时间以适应一个或多个去除缺陷或减轻单一应变的应变 水晶。

公开(公告)号：US20080006844A1

公开(公告)日：2008-01-10

申请号：US11621556

申请日：2007-01-09

申请人： Mark D'Evelyn ,  Dong-Sil Park ,  Steven LeBoeuf ,  Larry Rowland ,  Kristi Narang ,  Huicong Hong ,  Stephen Arthur ,  Peter Sandvik

发明人： Mark D'Evelyn ,  Dong-Sil Park ,  Steven LeBoeuf ,  Larry Rowland ,  Kristi Narang ,  Huicong Hong ,  Stephen Arthur ,  Peter Sandvik

IPC分类号： H01L33/00 ,  C01B21/06 ,  H01B1/02

CPC分类号： C30B29/406 ,  C30B7/10 ,  H01S5/305 ,  H01S5/32341 ,  Y10T428/21

摘要： A crystalline composition is provided that includes gallium and nitrogen. The crystalline composition may have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the crystalline composition. The volume may have at least one dimension that is about 2.75 millimeters or greater, and the volume may have a one-dimensional linear defect dislocation density of less than about 10,000 per square centimeter.

摘要翻译： 提供了包括镓和氮的结晶组合物。 结晶组合物可以具有以每立方厘米小于约3×10 18的浓度存在的氧量，并且在确定体积的结晶组合物中可以没有二维平面边界缺陷。 该体积可以具有至少一个尺寸为约2.75毫米或更大，并且该体积可具有小于约10,000每平方厘米的一维线性缺陷位错密度。

公开(公告)号：US20080008855A1

公开(公告)日：2008-01-10

申请号：US11621560

申请日：2007-01-09

申请人： Mark D'Evelyn ,  Dong-Sil Park ,  Steven LeBoeuf ,  Larry Rowland ,  Kristi Narang ,  Huicong Hong ,  Stephen Arthur ,  Peter Sandvik

发明人： Mark D'Evelyn ,  Dong-Sil Park ,  Steven LeBoeuf ,  Larry Rowland ,  Kristi Narang ,  Huicong Hong ,  Stephen Arthur ,  Peter Sandvik

IPC分类号： H01F1/40 ,  B32B15/00

CPC分类号： C30B9/00 ,  C30B29/406 ,  H01F1/404 ,  Y10T428/24355

摘要： A crystalline composition is provided. The crystalline composition may include gallium and nitrogen; and the crystalline composition may have an infrared absorption peak at about 3175 cm−1, with an absorbance per unit thickness of greater than about 0.01 cm−1.

摘要翻译： 提供了结晶组合物。 结晶组合物可包括镓和氮; 并且结晶组合物可以在约3175cm -1处具有红外吸收峰，每单位厚度的吸光度大于约0.01cm -1。

公开(公告)号：US20070158785A1

公开(公告)日：2007-07-12

申请号：US11559146

申请日：2006-11-13

申请人： Mark D'Evelyn ,  Dong-Sil Park ,  Steven LeBoeuf ,  Larry Rowland ,  Kristi Narang ,  Huicong Hong ,  Stephen Arthur ,  Peter Sandvik

发明人： Mark D'Evelyn ,  Dong-Sil Park ,  Steven LeBoeuf ,  Larry Rowland ,  Kristi Narang ,  Huicong Hong ,  Stephen Arthur ,  Peter Sandvik

IPC分类号： H01L29/20

CPC分类号： C30B29/406 ,  C30B9/00

摘要： A crystal comprising gallium nitride is disclosed. The crystal has at least one grain having at least one dimension greater than 2.75 mm, a dislocation density less than about 104 cm−2, and is substantially free of tilt boundaries.

摘要翻译： 公开了一种包括氮化镓的晶体。 晶体具有至少一个具有至少一个尺寸大于2.75mm的颗粒，位错密度小于约10 -4 cm -2，并且基本上没有倾斜边界 。

公开(公告)号：US20070040181A1

公开(公告)日：2007-02-22

申请号：US11376575

申请日：2006-03-15

申请人： Mark D'Evelyn ,  Dong-Sil Park ,  Steven LeBoeuf ,  Larry Rowland ,  Kristi Narang ,  Huicong Hong ,  Stephen Arthur ,  Peter Sandvik

发明人： Mark D'Evelyn ,  Dong-Sil Park ,  Steven LeBoeuf ,  Larry Rowland ,  Kristi Narang ,  Huicong Hong ,  Stephen Arthur ,  Peter Sandvik

IPC分类号： H01L33/00

CPC分类号： B82Y20/00 ,  C30B23/00 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02631 ,  H01L31/0304 ,  H01L31/03042 ,  H01L31/184 ,  H01L33/32 ,  H01S5/3402 ,  Y02E10/544

摘要： A crystalline composition is provided that includes gallium and nitrogen. The crystalline composition may have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the crystalline composition. The volume may have at least one dimension that is about 2.75 millimeters or greater, and the volume may have a one-dimensional linear defect dislocation density of less than about 10,000 per square centimeter.

摘要翻译： 提供了包括镓和氮的结晶组合物。 结晶组合物可以具有以每立方厘米小于约3×10 18的浓度存在的氧量，并且在确定体积的结晶组合物中可以没有二维平面边界缺陷。 该体积可以具有至少一个尺寸为约2.75毫米或更大，并且该体积可具有小于约10,000每平方厘米的一维线性缺陷位错密度。

公开(公告)号：US20060169996A1

公开(公告)日：2006-08-03

申请号：US11376640

申请日：2006-03-15

申请人： Mark D'Evelyn ,  Dong-Sil Park ,  Steven LeBoeuf ,  Larry Rowland ,  Kristi Narang ,  Huicong Hong ,  Stephen Arthur ,  Peter Sandvik

发明人： Mark D'Evelyn ,  Dong-Sil Park ,  Steven LeBoeuf ,  Larry Rowland ,  Kristi Narang ,  Huicong Hong ,  Stephen Arthur ,  Peter Sandvik

IPC分类号： H01L33/00

CPC分类号： C30B23/00 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  C30B7/00 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02631 ,  H01L31/0304 ,  H01L31/03042 ,  H01L31/184 ,  H01L33/32 ,  H01S5/3402 ,  Y02E10/544

摘要： A crystalline composition is provided. The crystalline composition may include gallium and nitrogen; and the crystalline composition may have an infrared absorption peak at about 3175 cm−1, with an absorbance per unit thickness of greater than about 0.01 cm−1.

摘要翻译： 提供了结晶组合物。 结晶组合物可包括镓和氮; 并且结晶组合物可以在约3175cm -1处具有红外吸收峰，每单位厚度的吸光度大于约0.01cm -1。

公开(公告)号：US20050087753A1

公开(公告)日：2005-04-28

申请号：US10693803

申请日：2003-10-24

申请人： Mark D'Evelyn ,  Xian-An Cao ,  Anping Zhang ,  Steven LeBoeuf ,  Huicong Hong ,  Dong-Sil Park ,  Kristi Narang

发明人： Mark D'Evelyn ,  Xian-An Cao ,  Anping Zhang ,  Steven LeBoeuf ,  Huicong Hong ,  Dong-Sil Park ,  Kristi Narang

IPC分类号： C30B9/00 ,  H01L33/00 ,  H01L33/10 ,  H01L21/00

CPC分类号： H01L33/105 ,  C30B9/00 ,  C30B29/403 ,  C30B29/406 ,  H01L33/007 ,  Y10T117/1064

摘要： In a method for producing a resonant cavity light emitting device, a seed gallium nitride crystal (14) and a source material (30) are arranged in a nitrogen-containing superheated fluid (44) disposed in a sealed container (10) disposed in a multiple-zone furnace (50). Gallium nitride material is grown on the seed gallium nitride crystal (14) to produce a single-crystal gallium nitride substrate (106, 106′). Said growing includes applying a temporally varying thermal gradient (100, 100′, 102, 102′) between the seed gallium nitride crystal (14) and the source material (30) to produce an increasing growth rate during at least a portion of the growing. A stack of group III-nitride layers (112) is deposited on the single-crystal gallium nitride substrate (106, 106′), including a first mirror sub-stack (116) and an active region (120) adapted for fabrication into one or more resonant cavity light emitting devices (108, 150, 160, 170, 180).

摘要翻译： 在制造谐振腔发光器件的方法中，将氮化镓晶体（14）和源极材料（30）布置在设置在密封容器（10）中的含氮过热流体（44）中， 多区炉（50）。 在氮化镓晶体（14）上生长氮化镓材料以制造单晶氮化镓衬底（106,106'）。 所述生长包括在种子氮化镓晶体（14）和源材料（30）之间施加时间上不同的热梯度（100,100'，102,102'），以在至少一部分生长期间产生增加的生长速率 。 一组III族氮化物层（112）沉积在单晶氮化镓衬底（106,106'）上，其包括第一反射镜子层（116）和适于制造成一体的有源区（120） 或更多的谐振腔发光器件（108,150,160,170,180）。

公开(公告)号：US20060118799A1

公开(公告)日：2006-06-08

申请号：US11295627

申请日：2005-12-06

申请人： Mark D'Evelyn ,  Xian-An Cao ,  Anping Zhang ,  Steven LeBoeuf ,  Huicong Hong ,  Dong-Sil Park ,  Kristi Narang

发明人： Mark D'Evelyn ,  Xian-An Cao ,  Anping Zhang ,  Steven LeBoeuf ,  Huicong Hong ,  Dong-Sil Park ,  Kristi Narang

IPC分类号： H01L33/00

CPC分类号： H01L33/105 ,  C30B9/00 ,  C30B29/403 ,  C30B29/406 ,  H01L33/007 ,  Y10T117/1064

摘要： A method may produce a resonant cavity light emitting device. A seed gallium nitride crystal and a source material in a nitrogen-containing superheated fluid may provide a medium for mass transport of gallium nitride precursors therebetween. A seed crystal surface may be prepared by applying a first thermal profile between the seed gallium nitride crystal and the source material. Gallium nitride material may be grown on the prepared surface of the seed gallium nitride crystal by applying a second thermal profile between the seed gallium nitride crystal and the source material while the seed gallium nitride crystal and the source material are in the nitrogen-containing superheated fluid. A stack of group III-nitride layers may be deposited on the single-crystal gallium nitride substrate. The stack may include a first mirror sub-stack and an active region adaptable for fabrication into one or more resonant cavity light emitting devices.