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    Semiconductor device
    4.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US07996735B2

    公开(公告)日：2011-08-09

    申请号：US12469778

    申请日：2009-05-21

    申请人： Motoyasu Terao ,  Satoru Hanzawa ,  Hitoshi Kume ,  Minoru Ogushi ,  Yoshitaka Sasago ,  Masaharu Kinoshita ,  Norikatsu Takaura

    发明人： Motoyasu Terao ,  Satoru Hanzawa ,  Hitoshi Kume ,  Minoru Ogushi ,  Yoshitaka Sasago ,  Masaharu Kinoshita ,  Norikatsu Takaura

    IPC分类号： G11C29/00

    CPC分类号： G11C13/0064 ,  G11C13/0004 ,  G11C13/004 ,  G11C13/0069 ,  G11C29/028 ,  G11C29/50 ,  G11C29/50008 ,  G11C2013/0054 ,  G11C2213/72

    摘要： To realize a fast and highly reliable phase-change memory system of low power consumption, a semiconductor device includes: a memory device which includes a first memory array having a first area including a plurality of first memory cells and a second area including a plurality of second memory cells; a controller coupled to the memory device to issue a command to the memory device; and a condition table for storing a plurality of trial writing conditions. The controller performs trial writing in the plurality of second memory cells a plurality of times based on the plurality of trial writing conditions stored in the condition table, and determines writing conditions in the plurality of first memory cells based on a result of the trial writing. The memory device performs writing in the plurality of first memory cells based on the writing conditions instructed from the controller.

    摘要翻译： 为了实现低功耗的快速且高度可靠的相变存储器系统，半导体器件包括：存储器件，其包括具有包括多个第一存储器单元的第一区域的第一存储器阵列和包括多个第一存储器单元的第二区域 第二存储单元; 控制器，其耦合到所述存储器设备以向所述存储器设备发出命令; 以及用于存储多个试写条件的条件表。 控制器基于存储在条件表中的多个试写条件，在多个第二存储单元中执行多次尝试写入，并且基于试写的结果来确定多个第一存储单元中的写入条件。 存储器件基于从控制器指示的写入条件在多个第一存储器单元中执行写入。

    Semiconductor device
    5.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08132063B2

    公开(公告)日：2012-03-06

    申请号：US13191442

    申请日：2011-07-26

    申请人： Motoyasu Terao ,  Satoru Hanzawa ,  Hitoshi Kume ,  Minoru Ogushi ,  Yoshitaka Sasago ,  Masaharu Kinoshita ,  Norikatsu Takaura

    发明人： Motoyasu Terao ,  Satoru Hanzawa ,  Hitoshi Kume ,  Minoru Ogushi ,  Yoshitaka Sasago ,  Masaharu Kinoshita ,  Norikatsu Takaura

    IPC分类号： G11C29/00

    CPC分类号： G11C13/0064 ,  G11C13/0004 ,  G11C13/004 ,  G11C13/0069 ,  G11C29/028 ,  G11C29/50 ,  G11C29/50008 ,  G11C2013/0054 ,  G11C2213/72

    摘要： To realize a fast and highly reliable phase-change memory system of low power consumption, a semiconductor device includes: a memory device which includes a first memory array having a first area including a plurality of first memory cells and a second area including a plurality of second memory cells; a controller coupled to the memory device to issue a command to the memory device; and a condition table for storing a plurality of trial writing conditions. The controller performs trial writing in the plurality of second memory cells a plurality of times based on the plurality of trial writing conditions stored in the condition table, and determines writing conditions in the plurality of first memory cells based on a result of the trial writing. The memory device performs writing in the plurality of first memory cells based on the writing conditions instructed from the controller.

    摘要翻译： 为了实现低功耗的快速且高度可靠的相变存储器系统，半导体器件包括：存储器件，其包括具有包括多个第一存储器单元的第一区域的第一存储器阵列和包括多个第一存储器单元的第二区域 第二存储单元; 控制器，其耦合到所述存储器设备以向所述存储器设备发出命令; 以及用于存储多个试写条件的条件表。 控制器基于存储在条件表中的多个试写条件，在多个第二存储单元中执行多次尝试写入，并且基于试写的结果来确定多个第一存储单元中的写入条件。 存储器件基于从控制器指示的写入条件在多个第一存储器单元中执行写入。

    Semiconductor device with ion movement control
    6.
    发明授权
    Semiconductor device with ion movement control 有权
    半导体器件具有离子运动控制

    公开(公告)号：US07829930B2

    公开(公告)日：2010-11-09

    申请号：US12169789

    申请日：2008-07-09

    申请人： Motoyasu Terao ,  Hideyuki Matsuoka ,  Naohiko Irie ,  Yoshitaka Sasago ,  Riichiro Takemura ,  Norikatsu Takaura

    发明人： Motoyasu Terao ,  Hideyuki Matsuoka ,  Naohiko Irie ,  Yoshitaka Sasago ,  Riichiro Takemura ,  Norikatsu Takaura

    IPC分类号： H01L27/108

    CPC分类号： H01L45/145 ,  G11C11/5614 ,  G11C13/0011 ,  G11C2213/11 ,  G11C2213/79 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146

    摘要： A technique that can realize high integration even for multilayered three-dimensional structures at low costs by improving the performance of the semiconductor device having recording or switching functions by employing a device structure that enables high precision controlling of the movement of ions in the solid electrolyte. The semiconductor element of the device is formed as follows; two or more layers are deposited with different components respectively between a pair of electrodes disposed separately in the vertical (z-axis) direction, then a pulse voltage is applied between those electrodes to form a conductive path. The resistance value of the path changes according to an information signal. Furthermore, a region is formed at a middle part of the conductive path. The region is used to accumulate a component that improves the conductivity of the path, thereby enabling the resistance value (rate) to response currently to the information signal. More preferably, an electrode should also be formed at least in either the x-axis or y-axis direction to apply a control voltage to the electrode.

    摘要翻译： 通过采用能够高精度地控制固体电解质中的离子的运动的装置结构，通过提高具有记录或切换功能的半导体器件的性能，可以以低成本实现多层次三维结构的高集成度的技术。 器件的半导体元件如下形成; 分别在垂直（z轴）方向上分开设置的一对电极之间分别沉积两层或更多层，然后在这些电极之间施加脉冲电压以形成导电路径。 路径的电阻值根据信息信号而变化。 此外，在导电路径的中间部分形成区域。 该区域用于累积改善路径的导电性的分量，从而使电阻值（速率）能够当前响应于信息信号。 更优选地，电极也应至少形成在x轴方向或y轴方向上，以向电极施加控制电压。

    SEMICONDUCTOR DEVICE
    7.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20090014770A1

    公开(公告)日：2009-01-15

    申请号：US12169789

    申请日：2008-07-09

    申请人： Motoyasu Terao ,  Hideyuki Matsuoka ,  Naohiko Irie ,  Yoshitaka Sasago ,  Riichiro Takemura ,  Norikatsu Takaura

    发明人： Motoyasu Terao ,  Hideyuki Matsuoka ,  Naohiko Irie ,  Yoshitaka Sasago ,  Riichiro Takemura ,  Norikatsu Takaura

    IPC分类号： H01L29/00

    CPC分类号： H01L45/145 ,  G11C11/5614 ,  G11C13/0011 ,  G11C2213/11 ,  G11C2213/79 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146

    摘要： A technique that can realize high integration even for multilayered three-dimensional structures at low costs by improving the performance of the semiconductor device having recording or switching functions by employing a device structure that enables high precision controlling of the movement of ions in the solid electrolyte. The semiconductor element of the device is formed as follows; two or more layers are deposited with different components respectively between a pair of electrodes disposed separately in the vertical (z-axis) direction, then a pulse voltage is applied between those electrodes to form a conductive path. The resistance value of the path changes according to an information signal. Furthermore, a region is formed at a middle part of the conductive path. The region is used to accumulate a component that improves the conductivity of the path, thereby enabling the resistance value (rate) to response currently to the information signal. More preferably, an electrode should also be formed at least in either the x-axis or y-axis direction to apply a control voltage to the electrode.

    摘要翻译： 通过采用能够高精度地控制固体电解质中的离子的运动的装置结构，通过提高具有记录或切换功能的半导体器件的性能，可以以低成本实现多层次三维结构的高集成度的技术。 器件的半导体元件如下形成; 分别在垂直（z轴）方向上分开设置的一对电极之间分别沉积两层或更多层，然后在这些电极之间施加脉冲电压以形成导电路径。 路径的电阻值根据信息信号而变化。 此外，在导电路径的中间部分形成区域。 该区域用于累积改善路径的导电性的分量，从而使电阻值（速率）能够当前响应于信息信号。 更优选地，电极也应至少形成在x轴方向或y轴方向上，以向电极施加控制电压。

    SEMICONDUCTOR DEVICE
    9.
    发明申请
    SEMICONDUCTOR DEVICE 失效
    半导体器件

    公开(公告)号：US20090014708A1

    公开(公告)日：2009-01-15

    申请号：US12169818

    申请日：2008-07-09

    申请人： Yoshitaka SASAGO ,  Motoyasu Terao ,  Norikatsu Takaura ,  Yoshihisa Fujisaki ,  Tomoyuki Kodama ,  Nobuyuki Arasawa

    发明人： Yoshitaka SASAGO ,  Motoyasu Terao ,  Norikatsu Takaura ,  Yoshihisa Fujisaki ,  Tomoyuki Kodama ,  Nobuyuki Arasawa

    IPC分类号： H01L45/00

    CPC分类号： H01L45/1206 ,  G06N3/063 ,  G11C13/0011 ,  H01L45/085 ,  H01L45/142 ,  H01L45/146 ,  H01L45/1675

    摘要： A nonvolatile, sophisticated semiconductor device with a small surface area and a simple structure capable of switching connections between three or more electrodes. In a semiconductor device at least one of the electrodes contains atoms such as copper or silver in the solid electrolyte capable of easily moving within the solid electrolyte, and those electrodes face each other and applying a voltage switches the voltage on and off by generating or annihilating the conductive path between the electrodes. Moreover applying a voltage to a separate third electrode can annihilate the conductive path formed between two electrodes without applying a voltage to the two electrode joined by the conductive path.

    摘要翻译： 具有小表面积的非易失性，复杂的半导体器件和能够切换三个或更多个电极之间的连接的简单结构。 在半导体器件中，电极中的至少一个在固体电解质中含有诸如铜或银之类的原子，能够容易地在固体电解质内移动，并且这些电极彼此面对并且施加电压通过产生或消除电压来开启和关闭电压 电极之间的导电路径。 此外，向单独的第三电极施加电压可以消除在两个电极之间形成的导电路径，而不向由导电路径连接的两个电极施加电压。

    Semiconductor device with solid electrolyte switching
    10.
    发明授权
    Semiconductor device with solid electrolyte switching 失效
    具有固体电解质开关的半导体器件

    公开(公告)号：US07767997B2

    公开(公告)日：2010-08-03

    申请号：US12169818

    申请日：2008-07-09

    申请人： Yoshitaka Sasago ,  Motoyasu Terao ,  Norikatsu Takaura ,  Yoshihisa Fujisaki ,  Tomoyuki Kodama ,  Nobuyuki Arasawa

    发明人： Yoshitaka Sasago ,  Motoyasu Terao ,  Norikatsu Takaura ,  Yoshihisa Fujisaki ,  Tomoyuki Kodama ,  Nobuyuki Arasawa

    IPC分类号： H01L29/06 ,  H01L29/08

    CPC分类号： H01L45/1206 ,  G06N3/063 ,  G11C13/0011 ,  H01L45/085 ,  H01L45/142 ,  H01L45/146 ,  H01L45/1675

    摘要： A nonvolatile, sophisticated semiconductor device with a small surface area and a simple structure capable of switching connections between three or more electrodes. In a semiconductor device at least one of the electrodes contains atoms such as copper or silver in the solid electrolyte capable of easily moving within the solid electrolyte, and those electrodes face each other and applying a voltage switches the voltage on and off by generating or annihilating the conductive path between the electrodes. Moreover applying a voltage to a separate third electrode can annihilate the conductive path formed between two electrodes without applying a voltage to the two electrode joined by the conductive path.

    摘要翻译： 具有小表面积的非易失性，复杂的半导体器件和能够切换三个或更多个电极之间的连接的简单结构。 在半导体器件中，电极中的至少一个在固体电解质中含有诸如铜或银之类的原子，能够容易地在固体电解质内移动，并且这些电极彼此面对并且施加电压通过产生或消除电压来开启和关闭电压 电极之间的导电路径。 此外，向单独的第三电极施加电压可以消除在两个电极之间形成的导电路径，而不向由导电路径连接的两个电极施加电压。