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1.发明授权公开(公告)号：US07811383B2
公开(公告)日：2010-10-12
申请号：US12421051
申请日：2009-04-09
CPC分类号： C30B29/06 , C30B11/003 , C30B35/002 , H01L31/04 , H01L31/1804 , Y02E10/546 , Y02P70/521 , Y10T117/10 , Y10T117/102 , Y10T117/108 , Y10T117/1088 , Y10T117/1092
摘要： The device for production of a monocrystalline or a multicrystalline material blank, especially a silicon multicrystalline blank, using the VGF method has a crucible with a rectangular or square cross section. A flat heating device, especially a jacket heater, which generates an inhomogeneous temperature profile, is arranged around the crucible. This temperature profile corresponds to the temperature gradient formed in the center of the crucible. The heat output of the flat heating device decreases from the top to the bottom end of the crucible. The flat heating device includes parallel heating webs, which extend in a meandering course. The heat outputs from the heating webs differ according to their different conductor cross sections. To avoid local overheating in corner areas of the crucible, constrictions of the cross sections of the heating webs are provided at inversion zones of their meandering course.
摘要翻译： 使用VGF方法制造单晶或多晶材料坯料，特别是硅多晶坯料的装置具有矩形或正方形横截面的坩埚。 在坩埚周围布置有平坦加热装置，特别是产生不均匀温度分布的夹套加热器。 该温度曲线对应于在坩埚中心形成的温度梯度。 扁平加热装置的热输出从坩埚的顶端向下端减小。 平面加热装置包括平行加热腹板，其在曲折的过程中延伸。 来自加热腹板的热量输出根据其不同的导体横截面而不同。 为了避免在坩埚的拐角区域局部过热，在它们的蜿蜒过程的反转区域处设置加热幅材横截面的收缩。
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2.发明申请公开(公告)号：US20090188427A1
公开(公告)日：2009-07-30
申请号：US12421051
申请日：2009-04-09
IPC分类号： C30B13/16
CPC分类号： C30B29/06 , C30B11/003 , C30B35/002 , H01L31/04 , H01L31/1804 , Y02E10/546 , Y02P70/521 , Y10T117/10 , Y10T117/102 , Y10T117/108 , Y10T117/1088 , Y10T117/1092
摘要： The device for production of a monocrystalline or a multicrystalline material blank, especially a silicon multicrystalline blank, using the VGF method has a crucible with a rectangular or square cross section. A flat heating device, especially a jacket heater, which generates an inhomogeneous temperature profile, is arranged around the crucible. This temperature profile corresponds to the temperature gradient formed in the center of the crucible. The heat output of the flat heating device decreases from the top to the bottom end of the crucible. The flat heating device includes parallel heating webs, which extend in a meandering course. The heat outputs from the heating webs differ according to their different conductor cross sections. To avoid local overheating in corner areas of the crucible, constrictions of the cross sections of the heating webs are provided at inversion zones of their meandering course.
摘要翻译： 使用VGF方法制造单晶或多晶材料坯料，特别是硅多晶坯料的装置具有矩形或正方形横截面的坩埚。 在坩埚周围布置有平坦加热装置，特别是产生不均匀温度分布的夹套加热器。 该温度曲线对应于在坩埚中心形成的温度梯度。 扁平加热装置的热输出从坩埚的顶端向下端减小。 平面加热装置包括平行加热腹板，其在曲折的过程中延伸。 来自加热腹板的热量输出根据其不同的导体横截面而不同。 为了避免在坩埚的拐角区域局部过热，在它们的蜿蜒过程的反转区域处设置加热幅材横截面的收缩。
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3.发明授权公开(公告)号：US07597756B2
公开(公告)日：2009-10-06
申请号：US11692005
申请日：2007-03-27
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B11/003 , C30B35/002 , H01L31/04 , H01L31/1804 , Y02E10/546 , Y02P70/521 , Y10T117/10 , Y10T117/102 , Y10T117/108 , Y10T117/1088 , Y10T117/1092
摘要： The method of producing monocrystalline or multicrystalline blanks, especially silicon blanks, by using a vertical-gradient-freeze method, includes providing a crucible with a rectangular or square-shaped cross section and a heating jacket disposed around the crucible, which has a number of flat heating elements with a meandering course disposed on side faces of the crucible. The heating jacket generates an inhomogeneous temperature profile corresponding to a temperature gradient in the center of the crucible. The flat heating elements preferably comprise parallel heating webs, whose heat output is set by varying the conductor cross section. To avoid local overheating in corner areas of the crucible, constrictions of the cross section are provided at inversion zones of the meandering courses of the webs. The flat heating elements can be formed from a plurality of interconnected individual segments.
摘要翻译： 通过使用垂直梯度冷冻方法制造单晶或多晶坯料，特别是硅坯料的方法包括提供具有矩形或方形截面的坩埚和设置在坩埚周围的加热套，其具有多个 具有设置在坩埚的侧面上的曲折的平面加热元件。 加热套产生对应于坩埚中心的温度梯度的不均匀温度曲线。 扁平加热元件优选地包括平行加热腹板，其热输出通过改变导体横截面来设定。 为了避免在坩埚的拐角区域局部过热，在腹板的蜿蜒过程的反转区域设有横截面的收缩。 扁平的加热元件可以由多个相互连接的各个段形成。
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4.发明申请公开(公告)号：US20070266931A1
公开(公告)日：2007-11-22
申请号：US11692005
申请日：2007-03-27
IPC分类号： C30B13/16
CPC分类号： C30B29/06 , C30B11/003 , C30B35/002 , H01L31/04 , H01L31/1804 , Y02E10/546 , Y02P70/521 , Y10T117/10 , Y10T117/102 , Y10T117/108 , Y10T117/1088 , Y10T117/1092
摘要： The invention relates to a device and a method for the production of monocrystalline or multicrystalline materials using the vertical-gradient-freeze method, in particular silicon for applications in photovoltaics. According to the invention a low amount of wastage is achieved in that the cross section of the crucible is polygonal, in particular rectangular or square-shaped. Disposed around the circumference of the crucible there is a flat or planar heating element, in particular a jacket heater, which generates an inhomogeneous temperature profile. This corresponds to the temperature gradient formed in the centre of the crucible. The heat output of the flat heating element decreases going from the top end to the bottom end of the crucible. The flat heating element comprises a plurality of parallel heating webs, extending in a vertical or horizontal meandering course. The heat output from the webs is set by varying the conductor cross section. To avoid local overheating in corner areas of the crucible, constrictions of the cross section are provided at inversion zones of the meandering courses of the webs. The flat heating element can be formed from a plurality of interconnected individual segments.
摘要翻译： 本发明涉及使用垂直梯度冷冻法，特别是用于光伏发电的硅的单晶或多晶材料的生产的装置和方法。 根据本发明，实现了少量的浪费，其中坩埚的横截面是多边形的，特别是矩形或正方形。 围绕坩埚的圆周布置有平坦或平面的加热元件，特别是夹套加热器，其产生不均匀的温度分布。 这对应于在坩埚中心形成的温度梯度。 扁平加热元件的热输出从坩埚的顶端到底端减小。 扁平加热元件包括多个平行的加热幅材，其在垂直或水平的曲折过程中延伸。 通过改变导体横截面来设定来自腹板的热量输出。 为了避免在坩埚的拐角区域局部过热，在腹板的蜿蜒过程的反转区域设有横截面的收缩。 扁平加热元件可以由多个相互连接的各个部分形成。
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5.发明授权公开(公告)号：US08101019B2
公开(公告)日：2012-01-24
申请号：US12334646
申请日：2008-12-15
IPC分类号： C30B15/14 , C30B11/00 , C30B21/04 , C30B13/00 , C30B28/08 , C30B9/00 , C30B17/00 , C30B21/02 , C30B28/06 , C30B35/00
CPC分类号： C30B11/003 , C30B11/04 , C30B29/06 , Y10T117/10
摘要： In the method of making a monocrystalline or polycrystalline semiconductor material semiconductor raw material is introduced into a melting crucible and directionally solidified using a vertical gradient freeze method. The molten material trickles downward, so that the raw material that has not yet melted gradually slumps in the melting crucible. The semiconductor raw material is replenished from above onto a zone of semiconductor raw material which has not yet melted or is not completely melted to at least partly compensate for shrinkage of the raw material and to raise the filling level. To reduce the melting time and influence the thermal conditions in the system as little as possible, the semiconductor raw material to be replenished is heated to a temperature below its melting temperature and introduced into the crucible in the heated state.
摘要翻译： 在制造单晶或多晶半导体材料的方法中，使用垂直梯度冷冻法将半导体原料引入熔融坩埚中并定向凝固。 熔融材料向下流动，使得尚未熔化的原料在熔化的坩埚中逐渐下降。 半导体原料从上方补充到尚未熔化或不完全熔化的至少部分地补偿原料收缩并提高填充水平的半导体原料区域上。 为了尽可能少地减少熔融时间并影响系统中的热条件，待补充的半导体原料被加热至低于其熔融温度的温度，并在加热状态下引入坩埚。
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6.发明申请Method for producing a monocrystalline or polycrystalline semiconductore material 有权用于制造单晶或多晶半导体材料的方法公开(公告)号：US20090158993A1
公开(公告)日：2009-06-25
申请号：US12334646
申请日：2008-12-15
IPC分类号： C30B11/06
CPC分类号： C30B11/003 , C30B11/04 , C30B29/06 , Y10T117/10
摘要： The invention relates to a method for producing a monocrystalline or polycrystalline semiconductor material by way of directional solidification, wherein lumpy semiconductor raw material is introduced into a melting crucible and melted therein and directionally solidified, in particular using the vertical gradient freeze method.In order to prevent contamination and damage, the semiconductor raw material is melted from the upper end of the melting crucible. The molten material trickles downward, so that semiconductor raw material which has not yet melted gradually slumps in the melting crucible. In this case, the additional semiconductor raw material is replenished to the melting crucible from above onto a zone of semiconductor raw material which has not yet melted or is not completely melted, in order at least partly to compensate for a volumetric shrinkage of the semiconductor raw material and to increase the filling level of the crucible.In order to reduce the melting-on time and to influence the thermal conditions in the system as little as possible, the semiconductor raw material to be replenished is heated by the purposeful introduction of heat to a temperature below the melting temperature of the semiconductor raw material and introduced into the container in the heated state.
摘要翻译： 本发明涉及通过定向凝固制造单晶或多晶半导体材料的方法，其中将块状半导体原料引入熔融坩埚中并在其中熔融并定向凝固，特别是使用垂直梯度冷冻法。 为了防止污染和损坏，半导体原料从熔融坩埚的上端熔化。 熔融材料向下流动，使得尚未熔化的半导体原料在熔融坩埚中逐渐下降。 在这种情况下，附加的半导体原料从熔化坩埚从上方补充到尚未熔化或不完全熔化的半导体原料区域上，以至少部分地补偿半导体原料的体积收缩 材料并增加坩埚的填充水平。 为了尽可能少地减少熔化时间并影响系统中的热条件，通过有目的地将热量引导到低于半导体原料的熔融温度的温度来加热待补充的半导体原料 并以加热状态引入容器。
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公开(公告)号：US20090047203A1
公开(公告)日：2009-02-19
申请号：US12191807
申请日：2008-08-14
申请人： Matthias Mueller , Uwe Sahr
发明人： Matthias Mueller , Uwe Sahr
摘要： The invention relates to the production of bulky monocrystalline metal or semi-metal bodies, in particular of a monocrystalline Si ingot, using the vertical gradient freeze (VGF) method by directional solidification of a melt in a melting crucible having a polygonal basic shape.According to the invention, the entire bottom of the melting crucible is completely covered with a thin seed crystal plate made of the monocrystalline semi-metal or metal. Throughout the procedure, the bottom of the melting crucible is kept below the melting temperature of the semi-metal or metal in order to prevent melting of the seed crystal plate.Monocrystalline ingots produced in this way are distinguished by a low average dislocation density of for example less than 105 cm−2, allowing the production of very efficient monocrystalline Si solar cells.
摘要翻译： 本发明涉及使用垂直梯度冷冻（VGF）法通过在具有多边形基本形状的熔化坩埚中熔体的定向凝固来生产大体积单晶金属或半金属体，特别是单晶Si锭。 根据本发明，熔融坩埚的整个底部完全被由单晶半金属或金属制成的薄晶种板覆盖。 在整个过程中，熔融坩埚的底部保持低于半金属或金属的熔化温度，以防止晶种板熔化。 以这种方式生产的单晶锭的特征在于低平均位错密度例如小于105cm -2，允许生产非常有效的单晶Si太阳能电池。
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公开(公告)号：US09271424B2
公开(公告)日：2016-02-23
申请号：US13261720
申请日：2012-02-17
申请人： Dennis Broemstrup , Siegfried Boehme , Heiko Holighaus , Matthias Mueller , Michael Schnakenberg
发明人： Dennis Broemstrup , Siegfried Boehme , Heiko Holighaus , Matthias Mueller , Michael Schnakenberg
CPC分类号： H05K7/1489 , H02B1/303 , Y10T403/42
摘要： A base or a mounting frame for an electrical enclosure or a rack, includes mounting pieces which are arranged, as corner pieces, in the corner regions of a rectangle or square that extends in an x-y plane. The mounting pieces are produced in a respective shaping process and include first and second mounting faces which lie outside with respect to the rectangle or square, which extend in the x direction and in the y direction at a right angle thereto and which extend in a space direction z at a right angle to the x-y plane. Sections of a system of covers are brought into contact with the mounting faces, where the covers having lateral covers with cover walls that are flat on the exterior and that have reinforcing ribs extending longitudinally on the interior, and are fastened to receiving structures of the mounting pieces by connecting structure.
摘要翻译： 用于电气外壳或机架的基座或安装框架包括安装件，其安装成在x-y平面中延伸的矩形或正方形的拐角区域中的角部件。 安装件在相应的成形工艺中制造，并且包括相对于矩形或正方形位于外侧的第一和第二安装面，其在x方向和y方向上以与其成直角的方向延伸，并且在空间中延伸 方向z与xy平面成直角。 覆盖系统的部分与安装面接触，其中盖具有侧壁盖，盖子在外部是平坦的，并且具有在内部纵向延伸的加强肋，并且被紧固到安装件的接收结构 连接结构件。
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公开(公告)号：US20140082918A1
公开(公告)日：2014-03-27
申请号：US13996811
申请日：2011-10-27
申请人： Christoph Grevener , Uwe Habisreitinger , Andreas Krevet , Matthias Mueller , Thomas Stark , Konrad Wirth , Michael Zuern
发明人： Christoph Grevener , Uwe Habisreitinger , Andreas Krevet , Matthias Mueller , Thomas Stark , Konrad Wirth , Michael Zuern
IPC分类号： B62D65/04
CPC分类号： B62D65/04 , B62D24/00 , B62D25/2009 , B62D65/10 , B62D65/12 , B65D65/12 , Y10T29/49622 , Y10T29/49828 , Y10T29/49829 , Y10T29/49904
摘要： A method for assembling motor vehicles in which a drive train, chassis and floor module are pre-assembled and then connected to a shell of the motor vehicle. The floor module is pre-assembled in a first pre-assembly process and the drive train and the chassis are pre-assembled in a second pre-assembly process. The floor module, the drive train and the chassis are combined and then connected to the shell of the motor vehicle.
摘要翻译： 一种用于组装机动车辆的方法，其中传动系，底盘和地板模块被预组装，然后连接到机动车辆的壳体。 地板模块在第一预组装过程中预先组装，并且传动系和底盘在第二预组装过程中被预组装。 地板模块，传动系和底盘组合在一起，然后连接到机动车辆的外壳。
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公开(公告)号：US20130227938A1
公开(公告)日：2013-09-05
申请号：US13695931
申请日：2011-02-25
IPC分类号： F15B15/00
CPC分类号： F15B15/00 , B60K6/12 , F15B1/02 , F15B11/072 , F15B21/14 , F15B2211/20569 , F15B2211/625 , F15B2211/88 , Y02T10/6208
摘要： A drive includes a hydraulic machine configured to convert kinetic energy into hydraulic energy and a hydrostatic energy store configured to be charged by the hydraulic machine. The drive further includes a control device configured to control the preloading of the store as a function of an operating state of a device driven by the drive. A hydrostatic energy store for a drive of a device includes a hydraulic machine which converts kinetic energy into hydraulic energy and charges the store. The store further includes a control device configured to vary a preloading of the store as a function of an operating state of the device. A method for adapting a preloading of a hydrostatic energy store includes determining an operating state of the device, determining the optimum preloading as a function of the determined operating state, and setting the preloading. A control device controls the setting of the preloading.
摘要翻译： 驱动器包括被配置为将动能转换为液压能量的液压机构以及被配置为由液压机充电的静水能量存储器。 驱动器还包括控制装置，其被配置为根据由驱动器驱动的装置的操作状态来控制存储器的预加载。 用于装置的驱动的静水能量储存器包括将动能转换成液压能量并对商店充电的液压机。 商店还包括配置成根据设备的操作状态改变商店的预加载的控制装置。 用于适应静液压能量储存器的预加载的方法包括确定装置的运行状态，根据所确定的运行状态确定最佳预加载，以及设定预加载。 控制装置控制预加载的设置。
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