公开(公告)号：US20250159912A1

公开(公告)日：2025-05-15

申请号：US18909685

申请日：2024-10-08

Applicant: Micron Technology, Inc.

Inventor： Dojun Kim ,  Sanket S. Kelkar ,  An-Jen B. Cheng ,  Christopher W. Petz ,  Ryan J. Waskiewicz ,  Michael Mutch ,  Ashwin Panday ,  Sarah bull

IPC: H10D1/00 ,  H10D1/68

Abstract: An apparatus comprising one or more capacitors that comprise a bottom electrode, a high-k dielectric material, and a top electrode. The bottom electrode comprises an oxygen-doped titanium nitride material and one or more undoped titanium nitride materials. The oxygen-doped titanium nitride material is on sidewalls of the one or more undoped titanium nitride materials and the one or more undoped titanium nitride materials extending between sidewalls of the oxygen-doped titanium nitride material. Electronic devices and methods of forming an electronic device are also disclosed.