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公开(公告)号:US20180012855A1
公开(公告)日:2018-01-11
申请号:US15696520
申请日:2017-09-06
申请人: NXP USA, INC.
IPC分类号: H01L23/00
CPC分类号: H01L24/05 , H01L24/03 , H01L24/27 , H01L24/29 , H01L24/80 , H01L24/83 , H01L2224/03019 , H01L2224/0312 , H01L2224/03462 , H01L2224/05547 , H01L2224/05568 , H01L2224/05582 , H01L2224/05601 , H01L2224/05611 , H01L2224/2746 , H01L2224/27825 , H01L2224/29 , H01L2224/29007 , H01L2224/29023 , H01L2224/29036 , H01L2224/29144 , H01L2224/29562 , H01L2224/2957 , H01L2224/29644 , H01L2224/32225 , H01L2224/32245 , H01L2224/80048 , H01L2224/80355 , H01L2224/80359 , H01L2224/83048 , H01L2224/83097 , H01L2224/83192 , H01L2224/83355 , H01L2924/01079 , H01L2924/1033 , H01L2924/0105 , H01L2924/00014
摘要: A method for attaching a semiconductor die to a substrate includes providing a substrate that includes an attachment layer at a surface of the substrate. The attachment layer is covered by a protective flash plating layer. The protective flash plating layer has a reflow temperature less than or equal to a reflow temperature of the attachment layer. The method further includes preheating the substrate to a temperature greater than or equal to a reflow temperature of the attachment layer, attaching a semiconductor die to the attachment layer, and cooling the substrate and semiconductor die.