公开(公告)号：US11127602B2

公开(公告)日：2021-09-21

申请号：US16489726

申请日：2018-02-28

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Mathias Wendt ,  Klaus Müller ,  Laurent Tomasini

IPC: H01L21/48 ,  H01L23/498 ,  H01L33/00 ,  H01S5/0237 ,  H01L23/48 ,  B23K1/00

Abstract: A method of attaching a semiconductor chip to a lead frame, including A) providing a semiconductor chip, B) applying a solder metal layer sequence on the semiconductor chip, C) providing a lead frame, D) applying a metallization layer sequence on the lead frame, E) applying the semiconductor chip on the lead frame via the solder metal layer sequence and the metallization layer sequence, and F) heating the arrangement produced under E) to attach the semiconductor chip to the lead frame, wherein the solder metal layer sequence includes a first metallic layer including an indium-tin alloy, a barrier layer arranged above the first metallic layer, and a second metallic layer including gold arranged between the barrier layer and the semiconductor chip.

公开(公告)号：US20200234976A1

公开(公告)日：2020-07-23

申请号：US16489726

申请日：2018-02-28

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Mathias Wendt ,  Klaus Müller ,  Laurent Tomasini

IPC: H01L21/48 ,  H01L23/498

Abstract: A method of attaching a semiconductor chip to a lead frame, including A) providing a semiconductor chip, B) applying a solder metal layer sequence on the semiconductor chip, C) providing a lead frame, D) applying a metallization layer sequence on the lead frame, E) applying the semiconductor chip on the lead frame via the solder metal layer sequence and the metallization layer sequence, and F) heating the arrangement produced under E) to attach the semiconductor chip to the lead frame, wherein the solder metal layer sequence includes a first metallic layer including an indium-tin alloy, a barrier layer arranged above the first metallic layer, and a second metallic layer including gold arranged between the barrier layer and the semiconductor chip.