公开(公告)号：US06455223B1

公开(公告)日：2002-09-24

申请号：US09534351

申请日：2000-03-24

申请人： Jun Hatakeyama ,  Tomohiro Kobayashi ,  Osamu Watanabe ,  Takanobu Takeda ,  Toshinobu Ishihara ,  Jun Watanabe

发明人： Jun Hatakeyama ,  Tomohiro Kobayashi ,  Osamu Watanabe ,  Takanobu Takeda ,  Toshinobu Ishihara ,  Jun Watanabe

IPC分类号： G03F7039

CPC分类号： G03F7/039 ,  G03F7/0045 ,  G03F7/038 ,  Y10S430/106

摘要： A resist composition comprising a dendritic or hyperbranched polymer of a phenol derivative having a weight average molecular weight of 500-10,000,000 has an excellent resolution, reduced line edge roughness, and dry etching resistance and is useful as a chemical amplification type resist composition which may be either positive or negative working.

摘要翻译： 包含重均分子量为500-10,000,000的苯酚衍生物的树枝状或超支化聚合物的抗蚀剂组合物具有优异的分辨率，线边缘粗糙度和耐干蚀刻性，并且可用作化学放大型抗蚀剂组合物，其可以是 正面或负面工作。

公开(公告)号：US06414101B1

公开(公告)日：2002-07-02

申请号：US09535166

申请日：2000-03-24

申请人： Osamu Watanabe ,  Takanobu Takeda ,  Jun Hatakeyama ,  Tomohiro Kobayashi ,  Toshinobu Ishihara ,  Jun Watanabe

发明人： Osamu Watanabe ,  Takanobu Takeda ,  Jun Hatakeyama ,  Tomohiro Kobayashi ,  Toshinobu Ishihara ,  Jun Watanabe

IPC分类号： C08F21214

CPC分类号： C08F257/02 ,  C08F290/04 ,  C08F297/02

摘要： A dendritic or hyperbranched polymer having a weight average molecular weight of 500-10,000,000 is prepared by polymerizing a hydroxystyrene derivative, adding a branching monomer midway in the polymerization step to introduce branch chains, and repeating the polymerizing and branching steps. The polymer is advantageously used as the base resin of resist material because the size of the polymer can be reduced while maintaining strength.

摘要翻译： 通过聚合羟基苯乙烯衍生物，在聚合步骤中途加入支化单体以引入支链并重复聚合和分支步骤，制备重均分子量为500-10,000,000的树枝状或超支化聚合物。 聚合物有利地用作抗蚀剂材料的基础树脂，因为可以在保持强度的同时降低聚合物的尺寸。

公开(公告)号：US6156481A

公开(公告)日：2000-12-05

申请号：US428911

申请日：1999-10-28

申请人： Takanobu Takeda ,  Osamu Watanabe ,  Jun Watanabe ,  Jun Hatakeyama ,  Youichi Ohsawa ,  Toshinobu Ishihara

发明人： Takanobu Takeda ,  Osamu Watanabe ,  Jun Watanabe ,  Jun Hatakeyama ,  Youichi Ohsawa ,  Toshinobu Ishihara

IPC分类号： G03F7/004 ,  G03F7/039

CPC分类号： G03F7/039 ,  G03F7/0045 ,  Y10S430/111

摘要： A hydroxystyrene-(meth)acrylate copolymer in which some phenolic hydroxyl groups are crosslinked with acid labile groups is blended as a base resin in a positive resist composition, which has the advantages of enhanced dissolution inhibition and an increased dissolution contrast after exposure.

摘要翻译： 将一些酚羟基与酸不稳定基团交联的羟基苯乙烯 - （甲基）丙烯酸酯共聚物作为基础树脂掺入正性抗蚀剂组合物中，其具有增强的溶解抑制和暴露后溶解度增加的优点。

公开(公告)号：US06653044B2

公开(公告)日：2003-11-25

申请号：US09760716

申请日：2001-01-17

申请人： Takanobu Takeda ,  Osamu Watanabe ,  Jun Watanabe ,  Jun Hatakeyama ,  Tsunehiro Nishi ,  Takeshi Kinsho

发明人： Takanobu Takeda ,  Osamu Watanabe ,  Jun Watanabe ,  Jun Hatakeyama ,  Tsunehiro Nishi ,  Takeshi Kinsho

IPC分类号： C07C6974

CPC分类号： G03F7/0045 ,  G03F7/039 ,  Y10S430/106 ,  Y10S430/11

摘要： A chemical amplification type resist composition uses as the base resin a polymer having a molecular weight dispersity of 1.0 to 1.5 which is a polymer comprising recurring units of formula (1) and recurring units of formula (2) or a polymer comprising recurring units of formula (2) wherein R1 is alkyl, alkoxyalkyl, acetyl or carbonylalkoxy, 0

摘要翻译： 化学放大型抗蚀剂组合物使用分子量分布为1.0〜1.5的聚合物作为基础树脂，其为包含式（1）的重复单元和式（2）的重复单元的聚合物或包含式 （2）其中R 1是烷基，烷氧基烷基，乙酰基或羰基烷氧基，0

公开(公告)号：US06623909B2

公开(公告)日：2003-09-23

申请号：US09870745

申请日：2001-06-01

申请人： Jun Hatakeyama ,  Toshiaki Takahashi ,  Toshinobu Ishihara ,  Jun Watanabe ,  Tohru Kubota ,  Yoshio Kawai

发明人： Jun Hatakeyama ,  Toshiaki Takahashi ,  Toshinobu Ishihara ,  Jun Watanabe ,  Tohru Kubota ,  Yoshio Kawai

IPC分类号： G03F7038

CPC分类号： C08G77/24 ,  G03F7/0045 ,  G03F7/0757 ,  Y10S430/106 ,  Y10S430/108

摘要： Polymers comprising recurring units of formula (1) are provided wherein R1 is a straight, branched or cyclic divalent C1-20 hydrocarbon group or a bridged cyclic hydrocarbon group, R is hydrogen atom or an acid labile group, 0≦m≦3, 0≦n≦3 and 0≦m+n≦6. Using the polymers, chemical amplification positive resist compositions featuring low absorption of F2 excimer laser light are obtained.

摘要翻译： 提供了包含式（1）的重复单元的聚合物，其中R 1是直链，支链或环状二价C 1-20烃基或桥连环烃基，R是氢原子或酸不稳定基团，0≤m <= 3,0 <= n <= 3，0 <= m + n <= 6。使用聚合物，获得具有F2受激准分子激光的低吸收性的化学放大阳性抗蚀剂组合物。

公开(公告)号：US06682869B2

公开(公告)日：2004-01-27

申请号：US09799052

申请日：2001-03-06

申请人： Youichi Ohsawa ,  Jun Watanabe ,  Takanobu Takeda ,  Akihiro Seki

发明人： Youichi Ohsawa ,  Jun Watanabe ,  Takanobu Takeda ,  Akihiro Seki

IPC分类号： G03F7004

CPC分类号： G03F7/0397 ,  G03F7/0392 ,  G03F7/0758 ,  Y10S430/106

摘要： A chemical amplification, positive resist composition is provided comprising (A) a photoacid generator and (B) a resin which changes its solubility in an alkali developer under the action of acid and has substituents of the formula: Ph—(CH2)nOCH(CH2CH3)— wherein Ph is phenyl and n=1 or 2. The composition has many advantages including improved focal latitude, improved resolution, minimized line width variation or shape degradation even on long-term PED, minimized defect left after coating, development and stripping, and improved pattern profile after development and is suited for microfabrication by any lithography, especially deep UV lithography.

摘要翻译： 提供化学放大正性抗蚀剂组合物，其包含（A）光酸产生剂和（B）在酸的作用下改变其在碱显影剂中的溶解度并具有下式的取代基的树脂：Ph-（CH 2）n OCH（CH 2 CH 3 ） - 其中Ph是苯基并且n = 1或2.组合物具有许多优点，包括改进的焦点纬度，改进的分辨率，最小化的线宽变化或形状退化，即使在长期PED上，涂覆后剩余的最小化缺陷，显影和剥离， 并且在显影后改进的图案轮廓，并且适用于通过任何光刻，特别是深UV光刻的微细加工。

公开(公告)号：US06838224B2

公开(公告)日：2005-01-04

申请号：US09799009

申请日：2001-03-06

申请人： Youichi Ohsawa ,  Jun Watanabe ,  Takanobu Takeda ,  Akihiro Seki

发明人： Youichi Ohsawa ,  Jun Watanabe ,  Takanobu Takeda ,  Akihiro Seki

IPC分类号： G03F7/028 ,  G03F7/039 ,  G03C1/73

CPC分类号： G03F7/0392 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/115 ,  Y10S430/12 ,  Y10S430/121 ,  Y10S430/122 ,  Y10S430/126

摘要： A chemical amplification, positive resist composition is provided comprising (A) a photoacid generator and (B) a resin which changes its solubility in an alkali developer under the action of acid and has substituents of the formula: C6H11—(CH2)nOCH(CH2CH3)— wherein C6H11 is cyclohexyl and n=0 or 1. The composition has many advantages including improved focal latitude, improved resolution, minimized line width variation or shape degradation even on long-term PED, minimized defect left after coating, development and stripping, and improved pattern profile after development and is suited for microfabrication by any lithography, especially deep UV lithography.

公开(公告)号：US06593056B2

公开(公告)日：2003-07-15

申请号：US09814049

申请日：2001-03-22

申请人： Takanobu Takeda ,  Jun Watanabe ,  Katsuya Takemura ,  Kenji Koizumi

发明人： Takanobu Takeda ,  Jun Watanabe ,  Katsuya Takemura ,  Kenji Koizumi

IPC分类号： G03F7039

CPC分类号： G03F7/0045 ,  G03F7/027 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/40 ,  Y10S430/106

摘要： A chemically amplified, positive resist composition comprising an organic solvent, a polymer having acid labile groups, a photoacid generator, a basic compound, and a compound containing at least two allyloxy groups is provided. The resist composition has a high sensitivity, resolution, dry etching resistance and process adaptability, and is improved in the slimming of a pattern film after development with an aqueous base solution. The resist composition is also applicable to the thermal flow process suited for forming a microsize contact hole pattern for the fabrication of VLSI.

摘要翻译： 提供了包含有机溶剂，具有酸不稳定基团的聚合物，光酸产生剂，碱性化合物和含有至少两个烯丙氧基的化合物的化学增幅阳性抗蚀剂组合物。 抗蚀剂组合物具有高灵敏度，分辨率，耐干蚀刻性和工艺适应性，并且在碱性水溶液显影后使图案膜减薄得到改善。 抗蚀剂组合物也适用于适于形成用于制造VLSI的微尺寸接触孔图案的热流程。

公开(公告)号：US06835524B2

公开(公告)日：2004-12-28

申请号：US09783321

申请日：2001-02-15

申请人： Jun Hatakeyama ,  Jun Watanabe ,  Yuji Harada

发明人： Jun Hatakeyama ,  Jun Watanabe ,  Yuji Harada

IPC分类号： G03C173

CPC分类号： C08F20/22 ,  C08F220/22 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0395 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/143

摘要： Polymers comprising recurring units of an acrylic derivative of fluorinated backbone represented by formula (1) are novel. R1, R2 and R3 are independently H, F, C1-20 alkyl or fluorinated C1-20 alkyl, at least one of R1, R2 and R3 contains fluorine, and R4 is a hydrophilic group. Using the polymers, chemical amplification positive resist compositions featuring low absorption of F2 excimer laser light are obtained.

摘要翻译： 包含由式（1）表示的氟化主链的丙烯酸衍生物的重复单元的聚合物是新颖的.R 1，R 2和R 3独立地是H，F，C 1-20烷基或氟化C 1-20烷基 ，R 1，R 2和R 3中的至少一个含有氟，R 4是亲水基团。 使用聚合物，得到具有F2准分子激光的低吸收性的化学放大阳性抗蚀剂组合物。

公开(公告)号：US06660447B2

公开(公告)日：2003-12-09

申请号：US09947767

申请日：2001-09-07

申请人： Jun Hatakeyama ,  Yuji Harada ,  Jun Watanabe ,  Masaru Sasago ,  Masayuki Endo ,  Shinji Kishimura

发明人： Jun Hatakeyama ,  Yuji Harada ,  Jun Watanabe ,  Masaru Sasago ,  Masayuki Endo ,  Shinji Kishimura

IPC分类号： G03F7004

CPC分类号： G03F7/0392 ,  C08F212/14

摘要： A polymer having fluorinated vinyl phenol units copolymerized with acrylonitrile units has high transmittance to VUV radiation. A resist composition using the polymer as a base resin has high sensitivity and resolution to high-energy radiation and good plasma etching resistance and is suited for lithographic microprocessing.