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公开(公告)号:US20240049490A1
公开(公告)日:2024-02-08
申请号:US18490823
申请日:2023-10-20
Inventor: SHINICHI MACHIDA , NOZOMU MATSUKAWA , FUMIYA SANO
CPC classification number: H10K39/32 , C09K11/664 , C09K11/025 , B82Y20/00
Abstract: A photoelectric conversion element includes a photoelectric conversion layer, a first electrode that collects holes generated in the photoelectric conversion layer, and a second electrode that is positioned opposite to the first electrode with the photoelectric conversion layer being disposed therebetween and that collects electrons generated in the photoelectric conversion layer. The photoelectric conversion layer includes a first quantum dot layer including first quantum dots each having a surface modified with a first ligand and includes a second quantum dot layer including second quantum dots each having a surface modified with a second ligand different from the first ligand. The second quantum dot layer has an ionization potential greater than an ionization potential of the first quantum dot layer. A second value that represents a particle diameter distribution of the second quantum dots is less than a first value that represents a particle diameter distribution of the first quantum dots.