公开(公告)号：US20040009672A1

公开(公告)日：2004-01-15

申请号：US10192154

申请日：2002-07-11

Applicant: ProMos Technologies, Inc.

Inventor： Jefferson Lu ,  Nien-Yu Tsai

IPC: H01L021/311

CPC classification number: H01L21/76808 ,  H01L21/0276 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76232 ,  H01L21/76804

Abstract: A method for manufacturing a semiconductor device that includes providing a substrate, providing a dielectric layer over the substrate, depositing a layer of anti-reflective coating over the dielectric layer, providing a layer of photoresist over the layer of anti-reflective coating, patterning and defining the photoresist layer to provide a plurality of photoresist structures, wherein at least two adjacent photoresist structures provide a first distance, anisotropically etching the layer of anti-reflective coating unmasked by the photoresist structures to remove only a portion of the anti-reflective coating layer, etching the anti-reflective coating to completely remove the layer of anti-reflective coating unmasked by the photoresist structures, and etching the dielectric layer to form at least one trench between the at least two adjacent photoresist structures, wherein the first distance is substantially equal to a second distance defining an opening at the top of the trench.