JUNCTION TEMPERATURE ESTIMATION
    1.
    发明公开

    公开(公告)号:US20240280414A1

    公开(公告)日:2024-08-22

    申请号:US18425008

    申请日:2024-01-29

    Abstract: The disclosure relates to estimation of junction temperatures of transistors in a power electronics converter. Example embodiments include a method of estimating a junction temperature of a transistor in a power electronics converter configured to convert between first and second supply voltages, the method comprising: providing a gate switching signal to the transistor; measuring a rate of change of current through the converter during a switching period of the transistor; and outputting an estimated junction temperature of the transistor based on the measured rate of change of current, wherein the rate of change of current is measured while a gate voltage of the transistor is above a gate threshold voltage and a drain-source voltage across the transistor is above a predetermined fraction of the first or second supply voltage whereby the rate of change of current is measured in a linear region.

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