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公开(公告)号：US08778813B2
公开(公告)日：2014-07-15
申请号：US13102846
申请日：2011-05-06
申请人： Ramprakash Sankarakrishnan , Ganesh Balasubramanian , Juan Carlos Rocha-Alvarez , Dale R. Du Bois , Mark Fodor , Jianhua Zhou , Amit Bansal , Mohamad A. Ayoub , Shahid Shaikh , Patrick Reilly , Deenesh Padhi , Thomas Nowak
发明人： Ramprakash Sankarakrishnan , Ganesh Balasubramanian , Juan Carlos Rocha-Alvarez , Dale R. Du Bois , Mark Fodor , Jianhua Zhou , Amit Bansal , Mohamad A. Ayoub , Shahid Shaikh , Patrick Reilly , Deenesh Padhi , Thomas Nowak
IPC分类号： H01L21/31 , H01L21/469 , H01L21/00 , H01J37/32 , C23C16/46 , C23C16/509 , H01L21/67 , H01L21/30 , H01L21/42 , C23C16/00 , B05C11/11
CPC分类号： H01L21/6719 , C23C16/46 , C23C16/5096 , H01J37/32495 , H01J37/32568 , H01J37/32651 , H01J37/32715
摘要： An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, a shield member disposed in the processing chamber below the substrate support, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source, and an electrode separated from the conductive gas distributor and the chamber body by electrical insulators. The electrode is also coupled to a source of electric power. The substrate support is formed with a stiffness that permits very little departure from parallelism. The shield member thermally shields a substrate transfer opening in the lower portion of the chamber body. A pumping plenum is located below the substrate support processing position, and is spaced apart therefrom.
摘要翻译： 提供了一种用于等离子体处理衬底的装置。 该设备包括处理室，设置在处理室中的衬底支撑件，设置在衬底支撑件下方的处理室中的屏蔽构件以及耦合到处理室的盖组件。 盖组件包括耦合到电源的导电气体分配器和通过电绝缘体与导电气体分配器和室主体分离的电极。 电极也耦合到电源。 衬底支撑件形成有允许很少偏离平行度的刚度。 屏蔽构件对室主体的下部的基板传送开口进行热屏蔽。 泵送气室位于基板支撑处理位置下方并与其间隔开。
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公开(公告)号：US20110294303A1
公开(公告)日：2011-12-01
申请号：US13102846
申请日：2011-05-06
申请人： Ramprakash Sankarakrishnan , Ganesh Balasubramanian , Juan Carlos Rocha-Alvarez , Dale R. Du Bois , Mark Fodor , Jianhua Zhou , Amit Bansal , Mohamad A. Ayoub , Shahid Shaikh , Patrick Reilly , Deenesh Padhi , Thomas Nowak
发明人： Ramprakash Sankarakrishnan , Ganesh Balasubramanian , Juan Carlos Rocha-Alvarez , Dale R. Du Bois , Mark Fodor , Jianhua Zhou , Amit Bansal , Mohamad A. Ayoub , Shahid Shaikh , Patrick Reilly , Deenesh Padhi , Thomas Nowak
IPC分类号： C23C16/44 , H01L21/30 , C23C16/509
CPC分类号： H01L21/6719 , C23C16/46 , C23C16/5096 , H01J37/32495 , H01J37/32568 , H01J37/32651 , H01J37/32715
摘要： An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, a shield member disposed in the processing chamber below the substrate support, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source, and an electrode separated from the conductive gas distributor and the chamber body by electrical insulators. The electrode is also coupled to a source of electric power. The substrate support is formed with a stiffness that permits very little departure from parallelism. The shield member thermally shields a substrate transfer opening in the lower portion of the chamber body. A pumping plenum is located below the substrate support processing position, and is spaced apart therefrom.
摘要翻译： 提供了一种用于等离子体处理衬底的装置。 该设备包括处理室，设置在处理室中的衬底支撑件，设置在衬底支撑件下方的处理室中的屏蔽构件以及耦合到处理室的盖组件。 盖组件包括耦合到电源的导电气体分配器和通过电绝缘体与导电气体分配器和室主体分离的电极。 电极也耦合到电源。 衬底支撑件形成有允许很少偏离平行度的刚度。 屏蔽构件对室主体的下部的基板传送开口进行热屏蔽。 泵送气室位于基板支撑处理位置下方并与其间隔开。
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公开(公告)号：US20110034034A1
公开(公告)日：2011-02-10
申请号：US12851794
申请日：2010-08-06
申请人： Dale R. Du Bois , Juan Carlos Rocha-Alvarez , Sanjeev Baluja , Ganesh Balasubramanian , Lipyeow Yap , Jianhua Zhou , Thomas Nowak
发明人： Dale R. Du Bois , Juan Carlos Rocha-Alvarez , Sanjeev Baluja , Ganesh Balasubramanian , Lipyeow Yap , Jianhua Zhou , Thomas Nowak
CPC分类号： H01L21/68 , B05C13/00 , C23C16/4585 , H01J37/32091 , H01L21/324 , H01L21/67103 , H01L21/68728 , H01L21/6875
摘要： A method and apparatus for heating a substrate in a chamber are provided. an apparatus for positioning a substrate in a processing chamber. In one embodiment, the apparatus comprises a substrate support assembly having a support surface adapted to receive the substrate and a plurality of centering members for supporting the substrate at a distance parallel to the support surface and for centering the substrate relative to a reference axis substantially perpendicular to the support surface. The plurality of the centering members are movably disposed along a periphery of the support surface, and each of the plurality of centering members comprises a first end portion for either contacting or supporting a peripheral edge of the substrate.
摘要翻译： 提供了一种用于加热室中的衬底的方法和装置。 用于将基板定位在处理室中的装置。 在一个实施例中，该装置包括基板支撑组件，该基板支撑组件具有适于接收基板的支撑表面和用于在平行于支撑表面的距离处支撑基板的多个定心构件，并且用于使基板相对于参考轴线基本垂直 到支撑面。 多个定心构件沿着支撑表面的周边可移动地设置，并且多个定心构件中的每一个包括用于接触或支撑衬底的周缘的第一端部。
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公开(公告)号：US08884524B2
公开(公告)日：2014-11-11
申请号：US13302012
申请日：2011-11-22
CPC分类号： H01J37/32091 , H01J37/32577
摘要： Embodiments of the present invention provide an RF conducting rod comprising a hollow portion. Particularly, the RF conducting rod comprises an elongated hollow body having a sidewall enclosing an inner volume, a first solid connector extending from a first end of the elongated hollow body, and a second solid connector extending from a second end of the elongated hollow body. Each of the elongated hollow body, the first solid connector and the second solid connector is formed from an electrically conductive material.
摘要翻译： 本发明的实施例提供一种包括中空部分的RF导电棒。 特别地，RF导杆包括细长的中空本体，其具有封闭内部容积的侧壁，从细长中空体的第一端延伸的第一固体连接器和从细长中空体的第二端延伸的第二固体连接器。 每个细长的中空体，第一固体连接器和第二固体连接器由导电材料形成。
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公开(公告)号：US20130126206A1
公开(公告)日：2013-05-23
申请号：US13302012
申请日：2011-11-22
IPC分类号： H02G3/04
CPC分类号： H01J37/32091 , H01J37/32577
摘要： Embodiments of the present invention provide an RF conducting rod comprising a hollow portion. Particularly, the RF conducting rod comprises an elongated hollow body having a sidewall enclosing an inner volume, a first solid connector extending from a first end of the elongated hollow body, and a second solid connector extending from a second end of the elongated hollow body. Each of the elongated hollow body, the first solid connector and the second solid connector is formed from an electrically conductive material.
摘要翻译： 本发明的实施例提供一种包括中空部分的RF导电棒。 特别地，RF导杆包括细长的中空本体，其具有封闭内部容积的侧壁，从细长中空体的第一端延伸的第一固体连接器和从细长中空体的第二端延伸的第二固体连接器。 每个细长的中空体，第一固体连接器和第二固体连接器由导电材料形成。
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6.发明授权Multifunctional heater/chiller pedestal for wide range wafer temperature control 有权多功能加热器/冷水机座，适用于宽幅晶圆温度控制公开(公告)号：US08274017B2
公开(公告)日：2012-09-25
申请号：US12641819
申请日：2009-12-18
申请人： Lipyeow Yap , Tuan Anh Nguyen , Dale R. Du Bois , Sanjeev Baluja , Thomas Nowak , Juan Carlos Rocha-Alvarez , Jianhua Zhou
发明人： Lipyeow Yap , Tuan Anh Nguyen , Dale R. Du Bois , Sanjeev Baluja , Thomas Nowak , Juan Carlos Rocha-Alvarez , Jianhua Zhou
IPC分类号： H05B3/68
CPC分类号： H01L21/67109 , H01L21/68792
摘要： Embodiments of the invention generally relate to a semiconductor processing chamber and, more specifically, a heated support pedestal for a semiconductor processing chamber. In one embodiment, a pedestal for a semiconductor processing chamber is provided. The pedestal comprises a substrate support comprising a conductive material and having a support surface for receiving a substrate, a resistive heater encapsulated within the substrate support, a hollow shaft coupled to the substrate support at a first end and a mating interface at an opposing end, the hollow shaft comprising a shaft body having a hollow core, and a cooling channel assembly encircling the hollow core and disposed within the shaft body for removing heat from the pedestal via an internal cooling path, wherein the substrate support has a heat control gap positioned between the heating element and the ring-shaped cooling channel.
摘要翻译： 本发明的实施例一般涉及半导体处理室，更具体地说，涉及用于半导体处理室的加热支撑基座。 在一个实施例中，提供了一种用于半导体处理室的基座。 基座包括基板支撑件，该基板支撑件包括导电材料并且具有用于接收基板的支撑表面，封装在基板支撑件内的电阻加热器，在第一端处耦合到基板支撑件的中空轴和在相对端处的配合接口， 所述空心轴包括具有中空芯的轴体和围绕所述中空芯的冷却通道组件，所述冷却通道组件设置在所述轴体内，用于经由内部冷却路径从所述基座移除热量，其中所述基板支撑件具有位于 加热元件和环形冷却通道。
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7.发明申请MULTIFUNCTIONAL HEATER/CHILLER PEDESTAL FOR WIDE RANGE WAFER TEMPERATURE CONTROL 有权多功能加热器/冷却器用于宽范围的温度控制公开(公告)号：US20110147363A1
公开(公告)日：2011-06-23
申请号：US12641819
申请日：2009-12-18
申请人： Lipyeow Yap , Tuan Anh Nguyen , Dale R. Du Bois , Sanjeev Baluja , Thomas Nowak , Juan Carlos Rocha-Alvarez , Jianhua Zhou
发明人： Lipyeow Yap , Tuan Anh Nguyen , Dale R. Du Bois , Sanjeev Baluja , Thomas Nowak , Juan Carlos Rocha-Alvarez , Jianhua Zhou
IPC分类号： H05B3/68
CPC分类号： H01L21/67109 , H01L21/68792
摘要： Embodiments of the invention generally relate to a semiconductor processing chamber and, more specifically, a heated support pedestal for a semiconductor processing chamber. In one embodiment, a pedestal for a semiconductor processing chamber is provided. The pedestal comprises a substrate support comprising a conductive material and having a support surface for receiving a substrate, a resistive heater encapsulated within the substrate support, a hollow shaft coupled to the substrate support at a first end and a mating interface at an opposing end, the hollow shaft comprising a shaft body having a hollow core, and a cooling channel assembly encircling the hollow core and disposed within the shaft body for removing heat from the pedestal via an internal cooling path, wherein the substrate support has a heat control gap positioned between the heating element and the ring-shaped cooling channel.
摘要翻译： 本发明的实施例一般涉及半导体处理室，更具体地说，涉及用于半导体处理室的加热支撑基座。 在一个实施例中，提供了一种用于半导体处理室的基座。 基座包括基板支撑件，该基板支撑件包括导电材料并且具有用于接收基板的支撑表面，封装在基板支撑件内的电阻加热器，在第一端处耦合到基板支撑件的中空轴和在相对端处的配合接口， 所述空心轴包括具有中空芯的轴体和围绕所述中空芯的冷却通道组件，所述冷却通道组件设置在所述轴体内，用于经由内部冷却路径从所述基座移除热量，其中所述基板支撑件具有位于 加热元件和环形冷却通道。
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公开(公告)号：US20090017635A1
公开(公告)日：2009-01-15
申请号：US12171708
申请日：2008-07-11
申请人： Ashish Shah , Ganesh Balasubramanian , Dale R. Du Bois , Mark A. Fodor , Eui Kyoon Kim , Chiu Chan , Karthik Janakiraman , Thomas Nowak , Joseph C. Werner , Visweswaren Sivaramakrishnan , Mohamad Ayoub , Amir Al-Bayati , Jianhua Zhou
发明人： Ashish Shah , Ganesh Balasubramanian , Dale R. Du Bois , Mark A. Fodor , Eui Kyoon Kim , Chiu Chan , Karthik Janakiraman , Thomas Nowak , Joseph C. Werner , Visweswaren Sivaramakrishnan , Mohamad Ayoub , Amir Al-Bayati , Jianhua Zhou
IPC分类号： H01L21/302 , C23F1/00
CPC分类号： H01L21/68 , Y10S414/136
摘要： The present invention comprises an apparatus and method for etching at a substrate edge region. In one embodiment, the apparatus comprises a chamber having a process volume, a substrate support arranged inside the process volume and having a substrate support surface, a plasma generator coupled to the chamber and configured to supply an etching agent in a plasma phase to a peripheral region of the substrate support surface, and a gas delivery assembly coupled to a gas source for generating a radial gas flow over the substrate support surface from an approximately central region of the substrate support surface toward the peripheral region of the substrate support surface.
摘要翻译： 本发明包括用于在衬底边缘区域刻蚀的设备和方法。 在一个实施例中，该装置包括具有处理体积的腔室，布置在处理体积内的衬底支撑件并且具有衬底支撑表面，等离子体发生器，耦合到腔室并且被配置为将等离子体相中的蚀刻剂供应到外围 基板支撑表面的区域以及耦合到气体源的气体输送组件，用于从衬底支撑表面的大致中心区域朝向衬底支撑表面的周边区域产生在衬底支撑表面上的径向气流。
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公开(公告)号：US20120090691A1
公开(公告)日：2012-04-19
申请号：US13248656
申请日：2011-09-29
CPC分类号： C23C16/56 , C23C16/4405 , C23C16/45565 , C23C16/482 , H01L21/6719 , H01L21/67742 , Y10T137/0391
摘要： Embodiments of the invention generally provide apparatuses and methods for controlling the gas flow profile within a processing chamber. In one embodiment, a processing tool includes an ultraviolet processing chamber defining a processing region, a substrate support, a window disposed between a UV radiation source and the substrate support, and a transparent showerhead disposed within the processing region between the window and the substrate support and having one or more transparent showerhead passages between upper and lower processing regions. The processing tool also includes a gas distribution ring having one or more gas distribution ring passages between a gas distribution ring inner channel and the upper processing region and a gas outlet ring positioned below the gas distribution ring, the gas outlet ring having one or more gas outlet passages between a gas outlet ring inner channel within the gas outlet ring and the lower processing region.
摘要翻译： 本发明的实施例通常提供用于控制处理室内的气流分布的装置和方法。 在一个实施例中，处理工具包括限定处理区域的紫外线处理室，衬底支撑件，设置在UV辐射源和衬底支撑件之间的窗口，以及布置在窗口和衬底支撑件之间的处理区域内的透明花洒 并且在上下处理区域之间具有一个或多个透明花洒通道。 处理工具还包括气体分配环，气体分配环具有在气体分配环内部通道和上部加工区域之间的一个或多个气体分配环通道和位于气体分配环下方的气体出口环，气体出口环具有一个或多个气体 气体出口环内的气体出口环内部通道和下部加工区域之间的出口通道。
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公开(公告)号：US08911553B2
公开(公告)日：2014-12-16
申请号：US13248656
申请日：2011-09-29
IPC分类号： C23C16/455 , C23C16/48 , C23C16/56 , H01L21/67 , C23C16/44 , H01L21/677
CPC分类号： C23C16/56 , C23C16/4405 , C23C16/45565 , C23C16/482 , H01L21/6719 , H01L21/67742 , Y10T137/0391
摘要： Embodiments of the invention generally provide apparatuses and methods for controlling the gas flow profile within a processing chamber. In one embodiment, a processing tool includes an ultraviolet processing chamber defining a processing region, a substrate support, a window disposed between a UV radiation source and the substrate support, and a transparent showerhead disposed within the processing region between the window and the substrate support and having one or more transparent showerhead passages between upper and lower processing regions. The processing tool also includes a gas distribution ring having one or more gas distribution ring passages between a gas distribution ring inner channel and the upper processing region and a gas outlet ring positioned below the gas distribution ring, the gas outlet ring having one or more gas outlet passages between a gas outlet ring inner channel within the gas outlet ring and the lower processing region.
摘要翻译： 本发明的实施例通常提供用于控制处理室内的气流分布的装置和方法。 在一个实施例中，处理工具包括限定处理区域的紫外线处理室，衬底支撑件，设置在UV辐射源和衬底支撑件之间的窗口，以及布置在窗口和衬底支撑件之间的处理区域内的透明花洒 并且在上下处理区域之间具有一个或多个透明花洒通道。 处理工具还包括气体分配环，气体分配环具有在气体分配环内部通道和上部加工区域之间的一个或多个气体分配环通道和位于气体分配环下方的气体出口环，气体出口环具有一个或多个气体 气体出口环内的气体出口环内部通道和下部加工区域之间的出口通道。
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