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18 条记录 (耗时 0.073 秒)

    Process kit design for deposition chamber
    5.
    发明申请
    Process kit design for deposition chamber 审中-公开
    沉积室的工艺套件设计

    公开(公告)号：US20050150452A1

    公开(公告)日：2005-07-14

    申请号：US10757021

    申请日：2004-01-14

    申请人： Soovo Sen ,  Mark Fodor ,  Martin Seamons ,  Priya Kulkarni ,  Visweswaren Sivaramakrishnan ,  Sudha Rathi ,  Tsutomu Shimayama ,  Thomas Nowak ,  Wendy Yeh

    发明人： Soovo Sen ,  Mark Fodor ,  Martin Seamons ,  Priya Kulkarni ,  Visweswaren Sivaramakrishnan ,  Sudha Rathi ,  Tsutomu Shimayama ,  Thomas Nowak ,  Wendy Yeh

    IPC分类号： C23C16/44 ,  C30B25/14 ,  C23C16/00

    CPC分类号： C23C16/4412

    摘要： The present invention provides a process kit for a semiconductor processing chamber. The processing chamber is a vacuum processing chamber that includes a chamber body defining an interior processing region. The processing region receives a substrate for processing, and also supports equipment pieces of the process kit. The process kit includes a pumping liner configured to be placed within the processing region of the processing chamber, and a C-channel liner configured to be placed along an outer diameter of the pumping liner. The pumping liner and the C-channel liner have novel interlocking features designed to inhibit parasitic pumping of processing or cleaning gases from the processing region. The invention further provides a semiconductor processing chamber having an improved process kit, such as the kit described. In one arrangement, the chamber is a tandem processing chamber.

    摘要翻译： 本发明提供了一种用于半导体处理室的处理套件。 处理室是真空处理室，其包括限定内部处理区域的室主体。 处理区域接收用于处理的基板，并且还支持处理套件的设备件。 该处理套件包括构造成放置在处理室的处理区域内的泵送衬套，以及构造成沿着泵送衬套的外径放置的C形通道衬套。 泵送衬管和C通道衬管具有新颖的互锁特征，其设计用于抑制来自处理区域的处理或清洁气体的寄生泵送。 本发明还提供了一种具有改进的处理工具的半导体处理室，例如所述的套件。 在一种布置中，室是串联处理室。

    Hardware development to reduce bevel deposition
    6.
    发明申请
    Hardware development to reduce bevel deposition 审中-公开
    硬件开发减少斜面沉积

    公开(公告)号：US20050196971A1

    公开(公告)日：2005-09-08

    申请号：US11043724

    申请日：2005-01-26

    申请人： Soovo Sen ,  Mark Fodor ,  Visweswaren Sivaramakrishnan ,  Junting Liu

    发明人： Soovo Sen ,  Mark Fodor ,  Visweswaren Sivaramakrishnan ,  Junting Liu

    IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/509 ,  H01L21/31 ,  H01L21/469 ,  H01L21/76

    CPC分类号： C23C16/4585 ,  C23C16/45521 ,  C23C16/5096

    摘要： Embodiments in accordance with the present invention relate to various techniques which may be employed alone or in combination, to reduce or eliminate the deposition of material on the bevel of a semiconductor workpiece. In one approach, a shadow ring overlies the edge of the substrate to impede the flow of gases to bevel regions. The geometric feature at the edge of the shadow ring directs the flow of gases toward the wafer in order to maintain thickness uniformity across the wafer while shadowing the edge. In another approach, a substrate heater/support is configured to flow purge gases to the edge of a substrate being supported. These purge gases prevent process gases from reaching the substrate edge and depositing material on bevel regions.

    摘要翻译： 根据本发明的实施例涉及可以单独使用或组合使用以减少或消除材料在半导体工件的斜面上的沉积的各种技术。 在一种方法中，阴影环覆盖在衬底的边缘上以阻止气体流向斜面区域。 阴影环边缘处的几何特征将气体流引导到晶片，以便在遮蔽边缘的同时保持晶片的厚度均匀性。 在另一种方法中，衬底加热器/支撑件构造成将净化气体流动到被支撑的衬底的边缘。 这些吹扫气体可防止工艺气体到达衬底边缘并将材料沉积在斜面区域上。

    Substrate heater assembly
    9.
    发明申请
    Substrate heater assembly 有权
    基板加热器总成

    公开(公告)号：US20050078953A1

    公开(公告)日：2005-04-14

    申请号：US10684054

    申请日：2003-10-10

    申请人： Mark Fodor ,  Sophia Velastegui ,  Soovo Sen ,  Visweswaren Sivaramakrishnan ,  Peter Lee ,  Mario Silvetti

    发明人： Mark Fodor ,  Sophia Velastegui ,  Soovo Sen ,  Visweswaren Sivaramakrishnan ,  Peter Lee ,  Mario Silvetti

    IPC分类号： C23C16/458 ,  C23C16/46 ,  H01L21/687 ,  F26B3/30 ,  F26B19/00 ,  H01L21/20

    CPC分类号： C23C16/4585 ,  C23C16/46 ,  H01L21/68735

    摘要： A substrate heater assembly for supporting a substrate of a predetermined standardized diameter during processing is provided. In one embodiment, the substrate heater assembly includes a body having an upper surface, a lower surface and an embedded heating element. A substrate support surface is formed in the upper surface of the body and defines a portion of a substrate receiving pocket. An annular wall is oriented perpendicular to the upper surface and has a length of at least one half a thickness of the substrate. The wall bounds an outer perimeter of the substrate receiving pocket and has a diameter less than about 0.5 mm greater than the predetermined substrate diameter.

    摘要翻译： 提供了一种用于在处理期间支撑预定标准直径的基板的基板加热器组件。 在一个实施例中，基板加热器组件包括具有上表面，下表面和嵌入式加热元件的主体。 衬底支撑表面形成在主体的上表面中并且限定衬底接收袋的一部分。 环形壁垂直于上表面定向并且具有衬底的至少一半厚度的长度。 该壁限定了基板接收槽的外周边，并具有小于预定基板直径的直径小于约0.5mm的直径。