公开(公告)号：US10312357B2

公开(公告)日：2019-06-04

申请号：US15798218

申请日：2017-10-30

Applicant: Renesas Electronics Corporation

Inventor： Ryo Kanda ,  Hitoshi Matsuura ,  Shuichi Kikuchi

IPC: H01L29/739 ,  H01L29/40 ,  H01L29/06 ,  H01L29/423

Abstract: A high-performance trench gate IGBT is provided. A trench gate IGBT according to one embodiment includes: a semiconductor substrate (11); a channel layer (15) provided on the semiconductor substrate (11); two floating P-type layer (12) provided on both sides of the channel layer 15, the floating P-type layers (12) being deeper than the channel layer (15); two emitter trenches (13) disposed between the two floating P-type layers (12), the emitter trenches (13) being respectively in contact with the floating P-type layers (12); at least two gate trenches (14) disposed between the two emitter trenches (13); and a source diffusion layer (19) disposed between the two gate trenches 14, the source diffusion layer (19) being in contact with each of the gate trenches (14).