摘要:
A semiconductor die has a first insulating material disposed around a periphery of the die. A portion of the first insulating material is removed to form a through hole via (THV). Conductive material is deposited in the THV. A second insulating layer is formed over an active surface of the die. A first passive circuit element is formed over the second insulating layer. A first passive via is formed over the THV. The first passive via is electrically connected to the conductive material in the THV. The first passive circuit element is electrically connected to the first passive via. A third insulating layer is formed over the first passive circuit element. A second passive circuit element is formed over the third insulating layer. A fourth insulating layer is formed over the second passive circuit element. A plurality of semiconductor die is stacked and electrically interconnected by the conductive via.
摘要:
A semiconductor device has an IPD structure formed over a substrate. First and second electrical devices are mounted to a first surface of the IPD structure. An encapsulant is deposited over the first and second electrical devices and IPD structure. A shielding layer is formed over the encapsulant and electrically connected to a conductive channel in the IPD structure. The conductive channel is connected to ground potential to isolate the first and second electrical devices from external interference. A recess can be formed in the encapsulant material between the first and second electrical devices. The shielding layer extends into the recess. An interconnect structure is formed on a second surface of the IPD structure. The interconnect structure is electrically connected to the first and second electrical devices and IPD structure. A shielding cage can be formed over the first electrical device prior to depositing encapsulant.
摘要:
A semiconductor device has an IPD structure formed over a substrate. First and second electrical devices are mounted to a first surface of the IPD structure. An encapsulant is deposited over the first and second electrical devices and IPD structure. A shielding layer is formed over the encapsulant and electrically connected to a conductive channel in the IPD structure. The conductive channel is connected to ground potential to isolate the first and second electrical devices from external interference. A recess can be formed in the encapsulant material between the first and second electrical devices. The shielding layer extends into the recess. An interconnect structure is formed on a second surface of the IPD structure. The interconnect structure is electrically connected to the first and second electrical devices and IPD structure. A shielding cage can be formed over the first electrical device prior to depositing encapsulant.
摘要:
A semiconductor device is made by forming an integrated passive device (IPD) structure on a substrate, mounting first and second electrical devices to a first surface of the IPD structure, depositing encapsulant over the first and second electrical devices and IPD structure, forming a shielding layer over the encapsulant, and electrically connecting the shielding layer to a conductive channel in the IPD structure. The conductive channel is connected to ground potential to isolate the first and second electrical devices from external interference. A recess can be formed in the encapsulant material between the first and second electrical devices. The shielding layer extends into the recess. An interconnect structure is formed on a second surface of the IPD structure. The interconnect structure is electrically connected to the first and second electrical devices and IPD structure. A shielding cage can be formed over the first electrical device prior to depositing encapsulant.
摘要:
A semiconductor die has a first insulating material disposed around a periphery of the die. A portion of the first insulating material is removed to form a through hole via (THV). Conductive material is deposited in the THV. A second insulating layer is formed over an active surface of the die. A first passive circuit element is formed over the second insulating layer. A first passive via is formed over the THV. The first passive via is electrically connected to the conductive material in the THV. The first passive circuit element is electrically connected to the first passive via. A third insulating layer is formed over the first passive circuit element. A second passive circuit element is formed over the third insulating layer. A fourth insulating layer is formed over the second passive circuit element. A plurality of semiconductor die is stacked and electrically interconnected by the conductive via.
摘要:
A semiconductor die has a first insulating material disposed around a periphery of the die. A portion of the first insulating material is removed to form a through hole via (THV). Conductive material is deposited in the THV. A second insulating layer is formed over an active surface of the die. A first passive circuit element is formed over the second insulating layer. A first passive via is formed over the THV. The first passive via is electrically connected to the conductive material in the THV. The first passive circuit element is electrically connected to the first passive via. A third insulating layer is formed over the first passive circuit element. A second passive circuit element is formed over the third insulating layer. A fourth insulating layer is formed over the second passive circuit element. A plurality of semiconductor die is stacked and electrically interconnected by the conductive via.
摘要:
A semiconductor device is made by forming an integrated passive device (IPD) structure on a substrate, mounting first and second electrical devices to a first surface of the IPD structure, depositing encapsulant over the first and second electrical devices and IPD structure, forming a shielding layer over the encapsulant, and electrically connecting the shielding layer to a conductive channel in the IPD structure. The conductive channel is connected to ground potential to isolate the first and second electrical devices from external interference. A recess can be formed in the encapsulant material between the first and second electrical devices. The shielding layer extends into the recess. An interconnect structure is formed on a second surface of the IPD structure. The interconnect structure is electrically connected to the first and second electrical devices and IPD structure. A shielding cage can be formed over the first electrical device prior to depositing encapsulant.
摘要:
A semiconductor die has a first insulating material disposed around a periphery of the die. A portion of the first insulating material is removed to form a through hole via (THV). Conductive material is deposited in the THV. A second insulating layer is formed over an active surface of the die. A first passive circuit element is formed over the second insulating layer. A first passive via is formed over the THV. The first passive via is electrically connected to the conductive material in the THV. The first passive circuit element is electrically connected to the first passive via. A third insulating layer is formed over the first passive circuit element. A second passive circuit element is formed over the third insulating layer. A fourth insulating layer is formed over the second passive circuit element. A plurality of semiconductor die is stacked and electrically interconnected by the conductive via.
摘要:
A semiconductor die has an insulating material disposed in a peripheral region around the die. A blind via is formed through the gap. A conductive material is deposited in the blind via to form a conductive via. A conductive layer is formed between the conductive via and contact pad on the semiconductor die. A protective layer is formed over the front side of the semiconductor die. A portion of the insulating material and conductive via is removed from a backside of the semiconductor die opposite the front side of the semiconductor die so that a thickness of the conductive via is less than a thickness of the semiconductor wafer. The insulating material and conductive via are tapered. The wafer is singulated through the gap to separate the semiconductor die. A plurality of semiconductor die can be stacked and electrically interconnected through the conductive vias.
摘要:
A semiconductor device is made by disposing a plurality of semiconductor die on a carrier and creating a gap between each of the semiconductor die. A first insulating material is deposited in the gap. A portion of the first insulating material is removed. A conductive layer is formed over the semiconductor die. A conductive lining is conformally formed on the remaining portion of the first insulating material to form conductive via within the gap. The conductive vias can be tapered or vertical. The conductive via is electrically connected to a contact pad on the semiconductor die. A second insulating material is deposited in the gap over the conductive lining. A portion of the conductive via may extend outside the first and second insulating materials. The semiconductor die are singulated through the gap. The semiconductor die can be stacked and interconnected through the conductive vias.