MAGNETORESISTIVE SENSOR
    1.
    发明申请
    MAGNETORESISTIVE SENSOR 有权
    磁传感器

    公开(公告)号:US20120025819A1

    公开(公告)日:2012-02-02

    申请号:US13191730

    申请日:2011-07-27

    IPC分类号: G01R33/02

    CPC分类号: G01R33/09 G01R33/096

    摘要: A magnetoresistive sensor comprising first and second magnetoresistive elements is disclosed. Each magnetoresistive element is coupled at a respective first end to a common ground terminal and comprises one or more magnetoresistive segments, each overlying a corresponding segment of an excitation coil. The resistance of the magnetoresistive segments in each of the first and second magnetoresistive elements is the same and the resistance of the segments of the excitation coil corresponding to the first magnetoresistive element is the same as the resistance of the segments of the excitation coil corresponding to the second magnetoresistive element.

    摘要翻译: 公开了包括第一和第二磁阻元件的磁阻传感器。 每个磁阻元件在相应的第一端处耦合到公共接地端子,并且包括一个或多个磁阻片段,每个磁阻片段覆盖激励线圈的相应片段。 第一和第二磁阻元件中的每一个中的磁阻部分的电阻相同,并且与第一磁阻元件相对应的激励线圈的段的电阻与对应于第一磁阻元件的激励线圈的段的电阻相同 第二磁阻元件。

    Magnetic field sensor
    2.
    发明授权
    Magnetic field sensor 有权
    磁场传感器

    公开(公告)号:US08587299B2

    公开(公告)日:2013-11-19

    申请号:US12949841

    申请日:2010-11-19

    IPC分类号: G01R33/02 G01R33/09

    CPC分类号: G01R33/09 G01R33/096

    摘要: An AMR sensor, comprises at least first and second AMR sensor elements to which opposite bias fields are applied. The first and second AMR sensor element outputs are combined to derive a sensor response which is substantially anti-symmetric in the region close to zero external magnetic field. This arrangement shifts the zero detection point of the AMR sensor elements away from a maximum of the response curve, so that sensitivity in proximity to a zero input field is obtained. To overcome the problem that the response is not anti-symmetric, the signals from (at least) two sensor elements are combined.

    摘要翻译: AMR传感器包括至少第一和第二AMR传感器元件,相应的偏置场被施加到该传感器元件。 组合第一和第二AMR传感器元件输出以导出在接近零的外部磁场的区域中基本上反对称的传感器响应。 该布置使得AMR传感器元件的零点检测点远离响应曲线的最大值,从而获得接近零输入场的灵敏度。 为了克服响应不是反对称的问题,来自(至少)两个传感器元件的信号被组合。

    Magnetoresistive sensor
    3.
    发明授权
    Magnetoresistive sensor 有权
    磁阻传感器

    公开(公告)号:US08680857B2

    公开(公告)日:2014-03-25

    申请号:US13191730

    申请日:2011-07-27

    IPC分类号: G01R33/02

    CPC分类号: G01R33/09 G01R33/096

    摘要: A magnetoresistive sensor comprising first and second magnetoresistive elements is disclosed. Each magnetoresistive element is coupled at a respective first end to a common ground terminal and comprises one or more magnetoresistive segments, each overlying a corresponding segment of an excitation coil. The resistance of the magnetoresistive segments in each of the first and second magnetoresistive elements is the same and the resistance of the segments of the excitation coil corresponding to the first magnetoresistive element is the same as the resistance of the segments of the excitation coil corresponding to the second magnetoresistive element.

    摘要翻译: 公开了包括第一和第二磁阻元件的磁阻传感器。 每个磁阻元件在相应的第一端处耦合到公共接地端子,并且包括一个或多个磁阻片段,每个磁阻片段覆盖激励线圈的相应片段。 第一和第二磁阻元件中的每一个中的磁阻部分的电阻相同,并且与第一磁阻元件相对应的激励线圈的段的电阻与对应于第一磁阻元件的激励线圈的段的电阻相同 第二磁阻元件。

    MAGNETIC FIELD SENSOR
    4.
    发明申请
    MAGNETIC FIELD SENSOR 有权
    磁场传感器

    公开(公告)号:US20110285395A1

    公开(公告)日:2011-11-24

    申请号:US12949841

    申请日:2010-11-19

    IPC分类号: G01R33/09

    CPC分类号: G01R33/09 G01R33/096

    摘要: An AMR sensor, comprises at least first and second AMR sensor elements to which opposite bias fields are applied. The first and second AMR sensor element outputs are combined to derive a sensor response which is substantially anti-symmetric in the region close to zero external magnetic field. This arrangement shifts the zero detection point of the AMR sensor elements away from a maximum of the response curve, so that sensitivity in proximity to a zero input field is obtained. To overcome the problem that the response is not anti-symmetric, the signals from (at least) two sensor elements are combined.

    摘要翻译: AMR传感器包括至少第一和第二AMR传感器元件,相应的偏置场被施加到该传感器元件。 组合第一和第二AMR传感器元件输出以导出在接近零的外部磁场的区域中基本上反对称的传感器响应。 该布置使得AMR传感器元件的零点检测点远离响应曲线的最大值,从而获得接近零输入场的灵敏度。 为了克服响应不是反对称的问题,来自(至少)两个传感器元件的信号被组合。

    Thin-film bulk-acoustic wave (BAW) resonators
    5.
    发明授权
    Thin-film bulk-acoustic wave (BAW) resonators 有权
    薄膜体声波(BAW)谐振器

    公开(公告)号:US08008993B2

    公开(公告)日:2011-08-30

    申请号:US12088721

    申请日:2006-09-28

    IPC分类号: H03H9/15 H03H9/54 H03H3/02

    摘要: A thin-film bulk acoustic wave (BAW) resonator, such as SBAR or FBAR, for use in RF selectivity filters operating at frequencies of the order of 1 GHz. The BAW resonator comprises a piezoelectric layer (14) having first and second surfaces on opposing sides, a first electrode (16) extending over the first surface, and a second electrode (12) extending over the second surface, the extent of the area of overlap (R1) of the first and second electrodes determining the region of excitation of the fundamental thickness extensional (TE) mode of the resonator. The insertion loss to the resonator is reduced by providing a dielectric material (18) in the same layer as the first electrode (16) and surrounding that electrode. The material constituting the dielectric material (18) has a different mass, typically between 5% and 15%, from the material comprising the first electrode (16) it surrounds. The mass of the dielectric material (18) can be lower or higher than the mass of the first electrode (16). Planarisation of the dielectric material (18) enhances the performance of the device.

    摘要翻译: 一种薄膜体声波(BAW)谐振器,例如SBAR或FBAR,用于在1 GHz频率工作的RF选择性滤波器。 BAW谐振器包括在相对侧上具有第一和第二表面的压电层(14),在第一表面上延伸的第一电极(16)和在第二表面上延伸的第二电极(12) 确定谐振器的基本厚度延伸(TE)模式的激励区域的第一和第二电极的重叠(R1)。 通过在与第一电极(16)相同的层中提供介电材料(18)并围绕该电极来减小谐振器的插入损耗。 构成电介质材料(18)的材料与包含其所包围的第一电极(16)的材料具有不同的质量,通常在5%至15%之间。 电介质材料(18)的质量可以低于或高于第一电极(16)的质量。 介电材料(18)的平面化增强了器件的性能。

    THIN-FILM BULK-ACOUSTIC WAVE (BAW) RESONATORS
    6.
    发明申请
    THIN-FILM BULK-ACOUSTIC WAVE (BAW) RESONATORS 有权
    薄膜大声波(BAW)谐振器

    公开(公告)号:US20090153268A1

    公开(公告)日:2009-06-18

    申请号:US12088721

    申请日:2006-09-28

    摘要: A thin-film bulk acoustic wave (BAW) resonator, such as SBAR or FBAR, for use in RF selectivity filters operating at frequencies of the order of 1 GHz. The BAW resonator comprises a piezoelectric layer (14) having first and second surfaces on opposing sides, a first electrode (16) extending over the first surface, and a second electrode (12) extending over the second surface, the extent of the area of overlap (R1) of the first and second electrodes determining the region of excitation of the fundamental thickness extensional (TE) mode of the resonator. The insertion loss to the resonator is reduced by providing a dielectric material (18) in the same layer as the first electrode (16) and surrounding that electrode. The material constituting the dielectric material (18) has a different mass, typically between 5% and 15 %, from the material comprising the first electrode (16) it surrounds. The mass of the dielectric material (18) can be lower or higher than the mass of the first electrode (16). Planarisation of the dielectric material (18) enhances the performance of the device.

    摘要翻译: 一种薄膜体声波(BAW)谐振器,例如SBAR或FBAR,用于在1 GHz频率工作的RF选择性滤波器。 BAW谐振器包括在相对侧上具有第一和第二表面的压电层(14),在第一表面上延伸的第一电极(16)和在第二表面上延伸的第二电极(12) 确定谐振器的基本厚度延伸(TE)模式的激励区域的第一和第二电极的重叠(R1)。 通过在与第一电极(16)相同的层中提供介电材料(18)并围绕该电极来减小谐振器的插入损耗。 构成电介质材料(18)的材料与其包围的第一电极(16)的材料具有不同的质量,通常在5%至15%之间。 电介质材料(18)的质量可以低于或高于第一电极(16)的质量。 介电材料(18)的平面化增强了器件的性能。

    Non-linear magnetic field sensors and current sensors
    7.
    发明授权
    Non-linear magnetic field sensors and current sensors 有权
    非线性磁场传感器和电流传感器

    公开(公告)号:US08395382B2

    公开(公告)日:2013-03-12

    申请号:US11577090

    申请日:2005-10-10

    IPC分类号: G01R33/02 G01R33/00

    摘要: The invention provides a magnetic field sensor or current sensor which can exhibit a substantially linear relationship between the sensor signal and the logarithm of the magnetic field or current. The sensor may be used as a wide dynamic range sensor which can offer a constant relative sensitivity and a uniform SNR over several decades. The design of the sensor device may be implemented in discrete magnetic field sensors or current sensors as well as in integrated current sensors in ICs comprising MRAM modules.

    摘要翻译: 本发明提供一种磁场传感器或电流传感器,其可以在传感器信号和磁场或电流的对数之间呈现基本上线性的关系。 该传感器可用作宽动态范围传感器,可在几十年内提供恒定的相对灵敏度和均匀的SNR。 传感器设备的设计可以在离散磁场传感器或电流传感器以及集成电流传感器中实现,其中包括MRAM模块。

    Magnetic rom information carrier with additional stabilizing layer
    8.
    发明授权
    Magnetic rom information carrier with additional stabilizing layer 有权
    磁性信息载体带有额外的稳定层

    公开(公告)号:US08202635B2

    公开(公告)日:2012-06-19

    申请号:US11814675

    申请日:2006-01-19

    申请人: Jaap Ruigrok

    发明人: Jaap Ruigrok

    IPC分类号: G11B5/64 G11B5/66 G11B5/667

    摘要: The invention relates to a read only magnetic information carrier (1b, 1c, 1d) comprising a substrate (2), an information layer (3) and a stabilizing layer (15a, 15b). The information layer (3) comprises a pattern of magnetic bits (4) of magnetic material wherein the pattern of magnetic bits (4) constitutes an array of bit locations. The presence or absence of the magnetic material at a bit location represents a value of the bit location by a magnetic field (5) having a predetermined magnetization direction (6). The stabilizing layer (15a, 15b) is arranged between the substrate (2) and the information layer (3) and comprises hard magnetic material (8, 9) which is magnetically coupled to the magnetic material of the magnetic bit (4). The magnetically coupled hard magnetic material (8, 9) provides the predetermined magnetization direction (6) of the magnetic field (5). The magnetic coupling between the hard magnetic material (8, 9) and the magnetic bits (4) prevents the predetermined magnetization direction (6) of the magnetized material of the magnetic bits (4) to change, which improves the thermal stability of the magnetic bits (4).

    摘要翻译: 本发明涉及一种只读磁信息载体(1b,1c,1d),包括基片(2),信息层(3)和稳定层(15a,15b)。 信息层(3)包括磁性材料的磁头(4)的图案,其中磁头(4)的图案构成位位置的阵列。 位置位置处的磁性材料的存在或不存在通过具有预定磁化方向(6)的磁场(5)表示位位置的值。 稳定层(15a,15b)设置在基板(2)和信息层(3)之间,并且包括与磁性钻头(4)的磁性材料磁耦合的硬磁材料(8,9)。 磁耦合硬磁材料(8,9)提供磁场(5)的预定磁化方向(6)。 硬磁性材料(8,9)和磁性体(4)之间的磁耦合防止了磁性体(4)的磁化材料的预定磁化方向(6)改变,从而改善了磁性材料 位(4)。

    MAGNETIC ROM INFORMATION CARRIER
    9.
    发明申请
    MAGNETIC ROM INFORMATION CARRIER 审中-公开
    磁光信息载体

    公开(公告)号:US20090195904A1

    公开(公告)日:2009-08-06

    申请号:US11996308

    申请日:2006-07-13

    IPC分类号: G11B5/02 G11B5/84

    摘要: The invention relates to a method of manufacturing a device (10) comprising a layer (12) having a pattern of disjunct portions (14) of magnetic material (18) generating a corresponding pattern of local magnetic fields (2). The magnetic material (18) is constituted of particles (22) dispersed in a solid substance (24). The particles are magnetically stable and substantially aligned for generating the local magnetic fields (2). The method comprises the steps of: providing a substance (32) having the particles (22) dispersed in the substance (32), the substance (32) having a viscosity for allowing the particles (22) to move in the substance (32), creating the pattern of disjunct portions (14) of the substance (32) in the layer (12) of the device (10), applying an external magnetic field (50) for substantially aligning the particles (22) in the disjunct portions (14) of the substance (32), and solidifying the substance (32) for obtaining the solid substance (24). The benefit of this method is that instead of changing the magnetization inside the particles (22), the particles (22) are moved, typically rotated, to be aligned to the externally applied magnetic field (50). Subsequent solidification of the substance (32) fixes the aligned magnetically stable particles (22) inside the solid substance (24) which results in a permanently magnetized magnetic material (18).

    摘要翻译: 本发明涉及一种制造器件(10)的方法,该器件(10)包括具有形成局部磁场(2)的相应图案的磁性材料(18)的分离部分(14)的图案的层(12)。 磁性材料(18)由分散在固体物质(24)中的颗粒(22)构成。 颗粒是磁性稳定的并且基本对齐以产生局部磁场(2)。 该方法包括以下步骤:提供具有分散在物质(32)中的颗粒(22)的物质(32),物质(32)具有使粒子(22)在物质(32)中移动的粘度, ,在装置(10)的层(12)中产生物质(32)的分离部分(14)的图案,施加外部磁场(50),用于使分离部分中的颗粒(22)基本上对准( 14),并固化物质(32)以获得固体物质(24)。 该方法的优点在于,代替改变颗粒(22)内部的磁化,颗粒(22)通常被旋转以与外部施加的磁场(50)对齐。 随后物质(32)的固化将固定物质(24)内的对准的磁稳定颗粒(22)固定,导致永久磁化的磁性材料(18)。

    MAGNETIC ROM INFORMATION CARRIER WITH ADDITIONAL STABILIZING LAYER
    10.
    发明申请
    MAGNETIC ROM INFORMATION CARRIER WITH ADDITIONAL STABILIZING LAYER 有权
    磁性信息载体与附加稳定层

    公开(公告)号:US20090009908A1

    公开(公告)日:2009-01-08

    申请号:US11814675

    申请日:2006-01-19

    申请人: Jaap Ruigrok

    发明人: Jaap Ruigrok

    IPC分类号: G11B5/74 H01F41/02

    摘要: The invention relates to a read only magnetic information carrier (1b, 1c, 1d) comprising a substrate (2), an information layer (3) and a stabilizing layer (15a, 15b). The information layer (3) comprises a pattern of magnetic bits (4) of magnetic material wherein the pattern of magnetic bits (4) constitutes an array of bit locations. The presence or absence of the magnetic material at a bit location represents a value of the bit location by a magnetic field (5) having a predetermined magnetization direction (6). The stabilizing layer (15a, 15b) is arranged between the substrate (2) and the information layer (3) and comprises hard magnetic material (8, 9) which is magnetically coupled to the magnetic material of the magnetic bit (4). The magnetically coupled hard magnetic material (8, 9) provides the predetermined magnetization direction (6) of the magnetic field (5). The magnetic coupling between the hard magnetic material (8, 9) and the magnetic bits (4) prevents the predetermined magnetization direction (6) of the magnetized material of the magnetic bits (4) to change, which improves the thermal stability of the magnetic bits (4).

    摘要翻译: 本发明涉及一种只读磁信息载体(1b,1c,1d),包括基片(2),信息层(3)和稳定层(15a,15b)。 信息层(3)包括磁性材料的磁头(4)的图案,其中磁头(4)的图案构成位位置的阵列。 位置位置处的磁性材料的存在或不存在通过具有预定磁化方向(6)的磁场(5)表示位位置的值。 稳定层(15a,15b)设置在基板(2)和信息层(3)之间,并且包括与磁性钻头(4)的磁性材料磁耦合的硬磁材料(8,9)。 磁耦合硬磁材料(8,9)提供磁场(5)的预定磁化方向(6)。 硬磁性材料(8,9)和磁性体(4)之间的磁耦合防止了磁性体(4)的磁化材料的预定磁化方向(6)改变,从而改善了磁性材料 位(4)。