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公开(公告)号:US20190218140A1
公开(公告)日:2019-07-18
申请号:US16318968
申请日:2017-08-02
Applicant: SAINT-GOBAIN GLASS FRANCE
Inventor: Nicolas MERCADIER , Matthieu ORVEN , Xavier CAILLET , Dominique BILLIERES
CPC classification number: C03C17/366 , C03C17/3626 , C03C17/3642 , C03C17/3644 , C03C17/3649 , C03C17/3681 , C03C2217/216 , C03C2217/256 , C03C2217/261 , C03C2217/281 , C03C2217/734 , C03C2218/154 , G02B1/11 , G02B5/0808 , G02B5/26 , G02B5/282 , G02F1/155 , H01L31/02168 , H01L31/022466
Abstract: A transparent substrate is provided on a main face with a stack of thin layers including a single metallic functional layer having properties of reflection in the infrared region and/or in the solar radiation region, in particular based on silver or on silver-containing metal alloy, and two antireflective coatings. The antireflective coatings each include at least one dielectric layer. The functional layer is positioned between the two antireflective coatings. At least the antireflective coating located between the substrate and the functional layer, indeed even both antireflective coatings, include(s) a layer including silicon-zirconium nitride, SixZryNz, with an atomic ratio of Zr to the sum Si+Zr, y/(x+y), which is between 25.0% and 40.0%, these values being incorporated, indeed even between 27.0% and 37.0%, these values being incorporated.
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公开(公告)号:US20180305250A1
公开(公告)日:2018-10-25
申请号:US15768411
申请日:2016-10-12
Applicant: SAINT-GOBAIN GLASS FRANCE
Inventor: Antoine DIGUET , Nicolas MERCADIER , Johann SKOLSKI , Matthieu ORVEN , Camille JOSEPH , Yemima BON SAINT CÔME
CPC classification number: C03C17/3618 , B32B17/10018 , C03C17/3644 , C03C17/366 , C03C17/3681 , C03C17/3689 , C03C2217/948 , C03C2218/322
Abstract: A heat treatment process includes irradiating a substrate including a glass sheet coated on one of its faces with a stack of thin layers, under an atmosphere containing oxygen (O2), with electromagnetic radiation having a wavelength comprised between 500 and 2000 nm, the electromagnetic radiation being emitted by an emitter device placed facing the stack of thin layers, a relative movement being created between the emitter device and the substrate, so as to raise the stack of thin layers to a temperature at least equal to 300° C. for a brief duration shorter than one second, wherein the last layer of the stack, making contact with the atmosphere, called the overcoat, is a metal layer of indium or of an indium-based alloy.
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