公开(公告)号：US20220115081A1

公开(公告)日：2022-04-14

申请号：US17355825

申请日：2021-06-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： BONGKIL JUNG ,  Dongjin SHIN ,  Manjae YANG ,  Byungsun LEE ,  Dongsu JANG

IPC: G11C27/00 ,  G11C5/14 ,  G11C7/10

Abstract: A non-volatile memory device includes a first and a second memory regions including first and second memory cells and first and second analog circuits, respectively; a control logic circuit determining on/off states of the analog circuits, and converting an external power supply voltage into an internal operating voltage for operation of each of the memory cells; and input/output circuit selecting an input/output memory region for performing input/output of data using the internal operating voltage, wherein input/output of data for the first and second memory cells are sequentially performed, and at least one of the each of the first and second analog circuits are turned on together while the input/output of data for the first memory cells is performed.