公开(公告)号：US20220328554A1

公开(公告)日：2022-10-13

申请号：US17539277

申请日：2021-12-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chan hee LEE ,  Kyung Ho LEE ,  Seung Ki BAEK ,  Seung Ki JUNG ,  Tae Sub JUNG

IPC: H01L27/146

Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface opposing the first surface, a photodiode layer in the semiconductor substrate, a transfer gate on the photodiode layer, the transfer gate being on the first surface of the semiconductor substrate, a first trench recessed from the first surface of the semiconductor substrate at one side of the transfer gate, a first impurity injection region on at least a portion of a bottom surface of the first trench, the first impurity injection region not being on a sidewall of the first trench, and a lens on the second surface of the semiconductor substrate.