公开(公告)号：US10937700B2

公开(公告)日：2021-03-02

申请号：US15583167

申请日：2017-05-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Mirco Cantoro ,  Yun-Il Lee ,  Hyung-Suk Lee ,  Yeon-Cheol Heo ,  Byoung-Gi Kim ,  Chang-Min Yoe ,  Seung-Chan Yun ,  Dong-Hun Lee

IPC: H01L27/082 ,  H01L27/24 ,  H01L27/115 ,  H01L21/8234 ,  H01L27/12 ,  H01L29/423 ,  H01L29/417 ,  H01L29/66 ,  H01L21/84 ,  H01L29/786 ,  H01L27/088 ,  H01L29/161 ,  H01L29/24 ,  H01L29/267 ,  H01L29/78

Abstract: A semiconductor device includes a first semiconductor pattern doped with first impurities on a substrate, a first channel pattern on the first semiconductor pattern, second semiconductor patterns doped with second impurities contacting upper edge surfaces, respectively, of the first channel pattern, and a first gate structure surrounding at least a portion of a sidewall of the first channel pattern.