公开(公告)号：US20190051597A1

公开(公告)日：2019-02-14

申请号：US15957048

申请日：2018-04-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-woo KIM ,  Chul-ki KIM ,  Chul-wan KIM ,  Yu-kyung PARK ,  Gil-heyun CHOI

IPC: H01L23/522 ,  H01L23/528 ,  H01L49/02

CPC classification number: H01L23/5223 ,  H01L23/5286 ,  H01L28/88 ,  H01L28/91

Abstract: A capacitor structure includes a substrate including an electrode pad and a ground pad, a plurality of dielectric layers on the substrate, the plurality of dielectric layers being at different levels on the substrate, a plurality of conductive pattern layers in at least two dielectric layers of the plurality of dielectric layers, the at least two dielectric layers of the plurality of dielectric layers being first dielectric layers, a plurality of via plugs connecting the plurality of conductive pattern layers to each other, and at least one contact layer in at least one second dielectric layer of the plurality of dielectric layers, the at least one second dielectric layer being different from the at least two first dielectric layers, and the at least one contact layer electrically connecting the plurality of conductive pattern layers to the electrode pad and the ground pad.