公开(公告)号：US20180019736A1

公开(公告)日：2018-01-18

申请号：US15649776

申请日：2017-07-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ha-Young KIM ,  DALHEE LEE ,  Hyoung-Suk OH ,  Keunho LEE ,  TAEJOONG SONG ,  SUNGWE CHO

IPC: H03K3/356 ,  H03K23/00

CPC classification number: H03K3/356104 ,  H03K3/35625 ,  H03K23/001

Abstract: A flip-flop includes an input interface, a first latch, a third inverter, and a second latch. The third inverter and the fifth inverter include first transistors of a first type formed between a first power contact and a second power contact supplied with a power supply voltage on first-type fins, and second transistors of a second type formed between a first ground contact and a second ground contact supplied with a ground voltage on second-type fins.

公开(公告)号：US20220270965A1

公开(公告)日：2022-08-25

申请号：US17744375

申请日：2022-05-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： BYOUNGGON KANG ,  CHANGBEOM KIM ,  DALHEE LEE ,  EUN-HEE CHOI

IPC: H01L23/528 ,  H01L23/522 ,  H01L29/78 ,  H01L27/092 ,  H01L27/02 ,  H01L27/118

Abstract: A semiconductor device includes a first gate electrode disposed on a substrate and extending in a first horizontal direction, a first gate contact and a dummy gate contact, which are spaced apart from each other in the first horizontal direction and are in contact with a top surface of the first gate electrode, a first interconnect line extending in a second horizontal direction and overlapping the first gate contact in a vertical direction with respect to the upper surface of the substrate, and a voltage generator configured to generate a first voltage and apply the first voltage to the first gate electrode via the first interconnect line and the first gate contact. The first gate electrode receives the first voltage via the first interconnect line and the first gate contact from the voltage generator. The dummy gate contact receives the first voltage via the first gate electrode.

公开(公告)号：US20210035902A1

公开(公告)日：2021-02-04

申请号：US16919670

申请日：2020-07-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： BYOUNGGON KANG ,  CHANGBEOM KIM ,  DALHEE LEE ,  EUN-HEE CHOI

IPC: H01L23/528 ,  H01L23/522 ,  H01L29/78 ,  H01L27/092 ,  H01L27/02 ,  H01L27/118

Abstract: A semiconductor device includes a first gate electrode disposed on a substrate and extending in a first horizontal direction, a first gate contact and a dummy gate contact, which are spaced apart from each other in the first horizontal direction and are in contact with a top surface of the first gate electrode, a first interconnect line extending in a second horizontal direction and overlapping the first gate contact in a vertical direction with respect to the upper surface of the substrate, and a voltage generator configured to generate a first voltage and apply the first voltage to the first gate electrode via the first interconnect line and the first gate contact. The first gate electrode receives the first voltage via the first interconnect line and the first gate contact from the voltage generator. The dummy gate contact receives the first voltage via the first gate electrode.