公开(公告)号：US20150001663A1

公开(公告)日：2015-01-01

申请号：US14315730

申请日：2014-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MYUNGWON LEE ,  SANGCHUL SUL ,  HIROSIGE GOTO ,  SAE-YOUNG KIM ,  KANG-SU LEE ,  GWIDEOKRYAN LEE ,  MASARU ISHII

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464

Abstract: An image sensor includes a semiconductor substrate, a storage node region in the semiconductor substrate, an insulating portion on the semiconductor substrate, a via contact extending through the insulating portion, a photo-electric converter in the semiconductor substrate and spaced apart from the storage node region, an organic photo-electric layer on the insulating portion, and a buffer interposed between and electrically connecting the via contact and the storage node region.

Abstract translation: 图像传感器包括半导体衬底，半导体衬底中的存储节点区域，半导体衬底上的绝缘部分，延伸穿过绝缘部分的通孔接触，半导体衬底中的光电转换器，并与存储节点间隔开 区域，绝缘部分上的有机光电层，以及插入在电触点和存储节点区域之间并将其电连接的缓冲器。