公开(公告)号：US10115759B2

公开(公告)日：2018-10-30

申请号：US15647664

申请日：2017-07-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngbin Lee ,  GukHyon Yon ,  Soojin Hong

IPC: H01L27/14 ,  H01L27/146

Abstract: A complementary metal-oxide semiconductor (CMOS) image sensor includes a device isolation layer provided in a trench of a substrate, the device isolation layer defining a pixel; and a photoelectric conversion device provided in the pixel. The device isolation layer includes a conductive layer, a tunneling layer interposed between the conductive layer and the substrate, and a trap layer interposed between the tunneling layer and the conductive layer.