公开(公告)号：US20230357123A1

公开(公告)日：2023-11-09

申请号：US18119388

申请日：2023-03-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jonghoon KIM ,  Suk Koo HONG ,  Young Gyu KIM ,  Jooyoung SONG ,  Hae Min YANG ,  Gumhye JEON ,  Juhee KIM ,  Sunah LEE ,  Ahhyun LEE ,  Hong Won LEE

IPC: C07C205/06 ,  G03F7/038 ,  G03F7/004 ,  G03F7/029

CPC classification number: C07C205/06 ,  G03F7/0382 ,  G03F7/0048 ,  G03F7/029

Abstract: A photoresist composition, a method of forming a pattern, and a method of synthesizing 6-nitrochrysene, the photoresist composition includes a polymer resin; a photo acid generator; a quencher; an organic solvent; and an etching resistance enhancer, wherein the etching resistance enhancer is represented by the following Chemical Formula 1,