公开(公告)号：US20180366552A1

公开(公告)日：2018-12-20

申请号：US15869642

申请日：2018-01-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yongkuk JEONG ,  Joohyun PARK ,  Hyoseok LEE

IPC: H01L29/423 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/66

Abstract: A semiconductor device includes a plurality of active patterns that protrude from a substrate. The semiconductor device further includes a gate structure. The gate structure is formed on the active patterns, and crosses over the active patterns. The gate structure includes a metal. The semiconductor structure further includes a capping structure formed on the gate structure, and a dielectric residue protruding from an upper surface of the gate structure. The dielectric residue extends into the capping structure, and includes a metal.