公开(公告)号：US20230042063A1

公开(公告)日：2023-02-09

申请号：US17852054

申请日：2022-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEONGHOON BAE ,  JUIL CHOI ,  GYUHO KANG ,  JONGHO PARK ,  ATSUSHI FUJISAKI

IPC: H01L25/065 ,  H01L23/538 ,  H01L23/367 ,  H01L23/31 ,  H01L23/00

Abstract: A semiconductor package includes; laterally stacked semiconductor blocks disposed side by side in a first horizontal direction on a redistribution structure, wherein each semiconductor block among the laterally stacked semiconductor blocks includes laterally stacked semiconductor chips, a heat dissipation plate, and a first molding member on the laterally stacked semiconductor chips.

公开(公告)号：US20230102285A1

公开(公告)日：2023-03-30

申请号：US18074134

申请日：2022-12-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JEONGGI JIN ,  SOLJI SONG ,  TAEHWA JEONG ,  JINHO CHUN ,  JUIL CHOI ,  ATSUSHI FUJISAKI

IPC: H01L23/00 ,  H01L23/522

Abstract: A semiconductor package including a semiconductor chip, a redistribution layer structure disposed under the semiconductor chip, a bump pad disposed under the redistribution layer structure and having an upper structure of a first width and a lower structure of a second width less than the first width, a metal seed layer disposed along a lower surface of the upper structure and a side surface of the lower structure, an insulating layer surrounding the redistribution layer structure and the bump pad, and a bump structure disposed under the bump pad. A first undercut is disposed at one end of the metal seed layer that contacts the upper structure, and a second undercut is disposed at an other end of the metal seed layer that contacts the lower structure.

公开(公告)号：US20210305189A1

公开(公告)日：2021-09-30

申请号：US17088350

申请日：2020-11-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JEONGGI JIN ,  SOLJI SONG ,  TAEHWA JEONG ,  JINHO CHUN ,  JUIL CHOI ,  ATSUSHI FUJISAKI

IPC: H01L23/00 ,  H01L23/522

Abstract: A semiconductor package including a semiconductor chip, a redistribution layer structure disposed under the semiconductor chip, a bump pad disposed under the redistribution layer structure and having an upper structure of a first width and a lower structure of a second width less than the first width, a metal seed layer disposed along a lower surface of the upper structure and a side surface of the lower structure, an insulating layer surrounding the redistribution layer structure and the bump pad, and a bump structure disposed under the bump pad. A first undercut is disposed at one end of the metal seed layer that contacts the upper structure, and a second undercut is disposed at an other end of the metal seed layer that contacts the lower structure.