SEMICONDUCTOR PACKAGE INCLUDING BACKSIDE POWER DELIVERY NETWORK LAYER

    公开(公告)号:US20250087646A1

    公开(公告)日:2025-03-13

    申请号:US18606888

    申请日:2024-03-15

    Abstract: A semiconductor package includes a first redistribution substrate, a first semiconductor chip on the first redistribution substrate, a first mold layer at least partially covering the first redistribution substrate and the first semiconductor chip, a plurality of first conductive pillars at least partially penetrating the first mold layer and contacting the first redistribution substrate, a second redistribution substrate on the first mold layer, a second semiconductor chip on the second redistribution substrate, a second mold layer at least partially covering the second redistribution substrate and the second semiconductor chip, a plurality of second conductive pillars at least partially penetrating the second mold layer and contacting the second redistribution substrate, and a third redistribution substrate on the second mold layer. The first semiconductor chip includes a first through via. The second semiconductor chip includes a backside power delivery network layer.

    SEMICONDUCTOR PACKAGE AND METHOD FOR FABRICATING THE SAME

    公开(公告)号:US20250029913A1

    公开(公告)日:2025-01-23

    申请号:US18419084

    申请日:2024-01-22

    Abstract: A semiconductor package includes: a first semiconductor chip including a first semiconductor layer, and a first connection pad and a first insulation layer that are provided on a surface of the first semiconductor layer extending in a first direction; and a second semiconductor chip including a second semiconductor layer, and a second connection pad and a second insulation layer that are provided on a surface of the second semiconductor layer. The first connection pad directly contacts the second connection pad and is provided on the second connection pad in a second direction that is perpendicular to the first direction. The first insulation layer directly contacts the second insulation layer, the first insulation layer is provided on the second insulation layer in the second direction. A width of the second connection pad in the first direction is smaller than a width of the first connection pad in the first direction.

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