公开(公告)号：US20250156461A1

公开(公告)日：2025-05-15

申请号：US18949531

申请日：2024-11-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Maria NOH ,  Misung KIM ,  Eunbi KIM ,  Sunhye KIM ,  Yeji PARK ,  Jaewon JEONG ,  Kyoungwoon HAHM ,  Taehun KIM ,  Wonsuk YANG ,  Junhyuk LEE

IPC: G06F16/33 ,  G06N5/02

Abstract: An electronic device includes a display; at least one processor; and at least one memory storing a knowledge graph, where the at least one memory stores instructions that, when executed by the at least one processor, cause the electronic device to perform at least one operation, and where the at least one operation includes: based on an occurrence of a trigger, identifying context information; displaying, through the display, a first reference text determined based on the context information and at least one node of the knowledge graph in a search box; displaying, through the display, a text corresponding to the first reference text in the search box according to a user input identical to part of the first reference text; based on the text and the at least one node of the knowledge graph, searching for a first content; and displaying, through the display, the searched first content.

公开(公告)号：US20220230851A1

公开(公告)日：2022-07-21

申请号：US17715453

申请日：2022-04-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaewon JEONG ,  Daebeom LEE ,  Juho LEE ,  Junghyun CHO

IPC: H01J37/32 ,  H01L21/3065

Abstract: A plasma processing system includes a radio-frequency (RF) power source unit configured to generate three RF powers; a process chamber to which a process gas supplied and to which the RF powers are applied to generate a plasma; and an impedance matcher between the RF power source unit and the process chamber, the impedance matcher configured to adjust an impedance. The RF power source unit may include a first RF power source connected to a first electrode located in a lower portion of the process chamber to apply a first RF power having a first frequency, a second RF power source connected to the first electrode and to apply a second RF power having a second frequency, and a third RF power source connected to a second electrode located in an upper portion of the process chamber and to apply a third RF power having a third frequency.

公开(公告)号：US20210351011A1

公开(公告)日：2021-11-11

申请号：US17099156

申请日：2020-11-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaewon JEONG ,  Daebeom LEE ,  Juho LEE ,  Junghyun CHO

IPC: H01J37/32 ,  H01L21/3065

Abstract: A plasma processing system includes a radio-frequency (RF) power source unit configured to generate three RF powers; a process chamber to which a process gas supplied and to which the RF powers are applied to generate a plasma; and an impedance matcher between the RF power source unit and the process chamber, the impedance matcher configured to adjust an impedance. The RF power source unit may include a first RF power source connected to a first electrode located in a lower portion of the process chamber to apply a first RF power having a first frequency, a second RF power source connected to the first electrode and to apply a second RF power having a second frequency, and a third RF power source connected to a second electrode located in an upper portion of the process chamber and to apply a third RF power having a third frequency.