公开(公告)号：US12133009B2

公开(公告)日：2024-10-29

申请号：US18086449

申请日：2022-12-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeong Soon Kang ,  Hyun Cheol Kim ,  Woo Bin Song ,  Kyung Hwan Lee

IPC: H04N25/77 ,  H04N25/51 ,  H04N25/59 ,  H04N25/709 ,  H04N25/76

CPC classification number: H04N25/77 ,  H04N25/709

Abstract: An image sensor includes a photoelectric converter configured to convert received light into charges in response to the received light and provide the charges to a first node, a transfer transistor configured to provide a voltage of the first node to a floating diffusion node, a reset transistor configured to reset a voltage of the floating diffusion node to a driving voltage based on a reset signal, a source follower transistor configured to provide a unit pixel output based on the voltage of the floating diffusion node, a select transistor connected to the source follower transistor and gated with a selection signal to output the unit pixel output to the outside, and a ferroelectric capacitor connected to the floating diffusion node, wherein the ferroelectric capacitor is configured to adjust a conversion gain of the floating diffusion node based on a conversion gain mode of the ferroelectric capacitor, the conversion gain mode being a first conversion gain mode, a second conversion gain mode, or a third conversion gain mode.