公开(公告)号：US12094076B2

公开(公告)日：2024-09-17

申请号：US17451790

申请日：2021-10-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junkeun Yoon ,  Kideok Kim ,  Minsoo Kim ,  Jeonghyun Kim

IPC: G06T3/40 ,  G06T7/12

CPC classification number: G06T3/40 ,  G06T7/12 ,  G06T2207/10024 ,  G06T2207/20021 ,  G06T2207/20221

Abstract: An electronic device and a controlling method of the electronic device is disclosed. Specifically, the electronic device according to the disclosure may identify, based on receiving a user input for expanding an outer area of a first image, a plurality of objects included in the first image, and obtain a first segmentation image including segmentation information on areas corresponding to the respective objects, obtain a second segmentation image in which an outer area of the first segmentation image is expanded based on the segmentation information, obtain a second image in which segmentation information included in the second segmentation image is converted to RGB information, obtain a third image by reflecting a feature of the first image to the second image based on the segmentation information, and provide the obtained third image.

公开(公告)号：US20240355757A1

公开(公告)日：2024-10-24

申请号：US18408215

申请日：2024-01-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeonghyun Kim ,  Sangjin Kim ,  Jaesuk Park ,  Yigwon Kim ,  Changmin Park ,  Hyungju Ryu

IPC: H01L23/544

CPC classification number: H01L23/544 ,  H01L2223/54426

Abstract: The present disclosure relates to semiconductor devices and their fabrication methods. An example semiconductor device comprises a substrate including a logic cell region and a key region, a dummy active pattern on the key region, and a key pattern in the dummy active pattern. The key pattern includes a key cell that is recessed at an upper portion of the substrate. The key cell includes a bottom surface lower than a top surface of the dummy active pattern, and a plurality of inner lateral surfaces that surround the bottom surface. The inner lateral surfaces include a first inner lateral surface and a second inner lateral surface opposite to the first inner lateral surface. A ratio of a silicon atom surface density of the second inner lateral surface to a silicon atom surface density of the first inner lateral surface is in a range of about 0.9 to about 1.1.