Fan-out semiconductor package
    1.
    发明授权

    公开(公告)号:US11011482B2

    公开(公告)日:2021-05-18

    申请号:US16916381

    申请日:2020-06-30

    Abstract: A semiconductor package includes a semiconductor chip, an encapsulant, and an interconnection member. The semiconductor chip has connection pads. The encapsulant encapsulates a portion of the semiconductor chip. The interconnection member includes a first insulating layer disposed on the encapsulant and a portion of the semiconductor chip, a redistribution layer disposed on the first insulating layer, and a second insulating layer disposed on the first insulating layer and the redistribution layer. The redistribution layer is electrically connected to the connection pads of the semiconductor chip, and a thickness of the second insulating layer is greater than a thickness of the first insulating layer.

    Fan-out semiconductor package
    2.
    发明授权

    公开(公告)号:US10600748B2

    公开(公告)日:2020-03-24

    申请号:US15377402

    申请日:2016-12-13

    Abstract: A fan-out semiconductor package includes: a first interconnection member having a through-hole; a semiconductor chip disposed in the through-hole and having an active surface having connection pads disposed thereon and an inactive surface opposing the active surface; an encapsulant encapsulating at least portions of the first interconnection member and the inactive surface of the semiconductor chip; a second interconnection member disposed on the first interconnection member and the active surface of the semiconductor chip; and a passivation layer disposed on the second interconnection member. The first interconnection member and the second interconnection member include, respectively, redistribution layers electrically connected to the connection pads of the semiconductor chip, the second interconnection member includes an insulating layer on which the redistribution layer of the second interconnection member is disposed, and the passivation layer has a modulus of elasticity greater than that of the insulating layer of the second interconnection member.

    FAN-OUT SEMICONDUCTOR PACKAGE
    3.
    发明申请

    公开(公告)号:US20200335460A1

    公开(公告)日:2020-10-22

    申请号:US16916381

    申请日:2020-06-30

    Abstract: A semiconductor package includes a semiconductor chip, an encapsulant, and an interconnection member. The semiconductor chip has connection pads. The encapsulant encapsulates a portion of the semiconductor chip. The interconnection member includes a first insulating layer disposed on the encapsulant and a portion of the semiconductor chip, a redistribution layer disposed on the first insulating layer, and a second insulating layer disposed on the first insulating layer and the redistribution layer. The redistribution layer is electrically connected to the connection pads of the semiconductor chip, and a thickness of the second insulating layer is greater than a thickness of the first insulating layer.

    Fan-out semiconductor package
    4.
    发明授权

    公开(公告)号:US10714437B2

    公开(公告)日:2020-07-14

    申请号:US15905062

    申请日:2018-02-26

    Abstract: A fan-out semiconductor package includes: a first interconnection member having a through-hole; a semiconductor chip disposed in the through-hole and having an active surface having connection pads disposed thereon and an inactive surface opposing the active surface; an encapsulant encapsulating at least portions of the first interconnection member and the inactive surface of the semiconductor chip; a second interconnection member disposed on the first interconnection member and the active surface of the semiconductor chip; and a passivation layer disposed on the second interconnection member. The first interconnection member and the second interconnection member include, respectively, redistribution layers electrically connected to the connection pads of the semiconductor chip, the second interconnection member includes an insulating layer on which the redistribution layer of the second interconnection member is disposed, and the passivation layer has a modulus of elasticity greater than that of the insulating layer of the second interconnection member.

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