公开(公告)号：US20230115922A1

公开(公告)日：2023-04-13

申请号：US17749436

申请日：2022-05-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong In LEE ,  In Hwa BAEK ,  Se-Hoon JANG ,  Dong Gap SHIN ,  Young Ho KIM ,  Seung Dae SEOK ,  Si Woong WOO ,  Jun Gyu LEE

IPC: H01J37/32

Abstract: A method for fabricating a semiconductor device includes loading a substrate into a process chamber, processing the substrate in the process chamber, using a plasma generated inside the process chamber, receiving a plasma light emitted from the plasma, selecting a target light from the plasma light, such that the target light is related to a surface condition of the substrate, and analyzing an intensity of the target light over time to monitor the surface condition of the substrate.